×

Plasma chamber for controlling ion dosage in ion implantation

  • US 5,760,405 A
  • Filed: 11/26/1996
  • Issued: 06/02/1998
  • Est. Priority Date: 02/16/1996
  • Status: Expired due to Fees
First Claim
Patent Images

1. Apparatus for controlling the extraction of an ion beam from a plasma having a mixture of primary ions and secondary ions, said apparatus comprising:

  • a chamber for enclosing said plasma, said chamber having an outlet port,a magnetic field generating means for separating said primary ions from said secondary ions within said chamber, andan extractor coupled to said outlet port for forming a ribbon shaped ion beam elongated along a first axis,wherein said extractor cooperates with said magnetic field generating means to extract a ribbon shaped ion beam of the primary ions the ribbon shaped ion beam having reduced non-uniformities.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×