Light-sensing device

• US 5,760,885 A
• Filed: 12/07/1995
• Issued: 06/02/1998
• Est. Priority Date: 12/14/1994
• Status: Expired due to Term

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Yokoyama, Osamu, Kaneko, Takeo
• Primary Examiner(s): Hellner, Mark
• Application Number:
  US08/568,471
• Time in Patent Office: 908 Days
• Field of Search: 356/4.01, 356/3.11, 356/141.2, 356/141.1, 356/141.5, 356/563
• US Class Current: 356/4.01
• CPC Class Codes: G01S 7/481 Constructional features, e.g. arrangements of optical elements
• CPC Class Codes: G01S 7/4813 Housing arrangements
• CPC Class Codes: G01S 7/4814 of transmitters alone
• CPC Class Codes: G01S 7/484 Transmitters

Abstract

A light-sensing device comprises a light source consisting of a semiconductor laser, a light-transmitting optical system having a lens surface and a diffraction grating surface arranged on the optical axis of light emitted from this light source, and a light-receiving detection system that detects any of the emitted light that is reflected from an object to be inspected. This emitted light is diffracted in at least two intersecting directions by the diffraction grating surface.

Claims

1. A light-sensing device comprising:

a light source including a semiconductor laser;

a light-transmitting optical system having a lens surface and a diffraction grating surface arranged on the optical axis of light emitted from said light source; and

a light-receiving detection system that detects any of said emitted light that is reflected from an object to be inspected, wherein said emitted light is diffracted in at least two orthogonal directions by said diffraction grating surface.

2. The light-sensing device as defined in claim 1, wherein said diffraction grating surface is formed of a single diffraction grating.

3. The light-sensing device as defined in claim 2, wherein said diffraction grating surface comprises a first diffraction grating surface formed on one surface of a grating substrate and a second diffraction grating surface formed on the other surface of the grating substrate, each diffraction grating surface has a grating pattern formed of a linear group of ridges and troughs in a single direction, and the direction of said group of ridges and troughs of said first diffraction grating surface is orthogonal to the direction of group of ridges and troughs of said second diffraction grating surface.

4. The light-sensing device as defined in claim 2, wherein said diffraction grating surface is formed on one surface of a grating substrate and said diffraction grating surface has a grating pattern formed of orthogonal linear groups of ridges and troughs.

5. The light-sensing device as defined in claim 2, wherein said diffraction grating surface is formed on one surface of a grating substrate and said diffraction grating surface has a grating pattern formed of a group of concentric curved ridges and troughs.

6. The light-sensing device as defined in claim 5, wherein said grating pattern consists of a group of ridges and troughs in a concentric circular or elliptical shape.

7. The light-sensing device as defined in claim 1, wherein said lens surface and said diffraction grating surface are formed on a single substrate, a refraction lens surface is formed on one surface of said substrate, and a diffraction lens surface comprising a group of ridges and troughs in a concentric circular or elliptical shape is formed on the other surface thereof.

8. The light-sensing device as defined in claim 1, wherein a group of ridges and troughs configuring said diffraction grating surface has a sectional shape that is a saw-tooth pattern.

9. The light-sensing device as defined in claim 1, wherein said semiconductor laser comprises a substrate formed of a compound semiconductor of a first conductivity type, semiconductor layers deposited on one surface of said substrate, a current constriction layer formed on said semiconductor layers and having at least one stripe-shaped current injection region, and a pair of reflective layers formed on edge surfaces of said substrate and said semiconductor layers;

said semiconductor layers comprise;

a first cladding layer of the first conductivity type positioned on said substrate side,

a first optical waveguide layer of the first conductivity type formed on said first cladding layer,

an active layer formed on said first optical waveguide layer and having a quantum-well structure,

a second optical waveguide layer of a second conductivity type formed on said active layer,

a second cladding layer of the second conductivity type formed on said second optical waveguide layer, and

a contact layer of the second conductivity formed on said second cladding layer, and wherein;

said active layer has flatness of such a degree that roughness with respect to a reference surface within a unit area of 1 mm×

1 mm is no more than ±

0.1 μ

m,

the width of said current injection region of said current constriction layer is between 100 μ

m and 250 μ

m, and

the resonator length is between 500 μ

m and 1,000 μ

m.

10. The light-sensing device as defined in claim 9, wherein said semiconductor layers are formed of AlGaAs-type compound semiconductors.

11. The light-sensing device as defined in claim 9, wherein said pair of reflective layers comprise a first reflective layer with a reflectance at the lasing wavelength of 0.1% to 5% and a second reflective layer with a reflectance at the lasing wavelength of at least 98.5%.

12. The light-sensing device as defined in claim 11, wherein said reflective layers are each formed of one or more pairs of two thin dielectric films of differing refractive indices deposited alternately, such that in said first reflective layer a thin dielectric film with a larger refractive index is deposited on the semiconductor-layer side, and in said second reflective layer a thin dielectric film with a smaller refractive index is deposited on the semiconductor-layer side.

13. The light-sensing device as defined in claim 9, wherein said semiconductor layers are formed of AlGaAs-type compound semiconductors, and said active layer comprises well and barrier layers, the value of x in the Al_x Ga_1-x As of a well layer is 0, the value of x in the Al_x Ga_1-x As of a barrier layer is between 0.15 and 0.25, and the value of x in the Al_x Ga_1-x As of said first and second cladding layers is at least 0.28.

14. The light-sensing device as defined in claim 9, wherein a blocking layer is formed between at least one pair of said first cladding layer and said first optical waveguide layer, and said second cladding layer and said second optical waveguide layer.

15. The light-sensing device as defined in claim 14, wherein said semiconductor layers are formed of AlGaAs-type compound semiconductors, and the value of x in the Al_x Ga_1-x As of said first cladding layer and said second cladding layer is between 0.20 and 0.40.

16. The light-sensing device as defined in claim 14, wherein said semiconductor layers are formed of AlGaAs-type compound semiconductors, and said blocking layer has film thickness of 8 nm to 20 nm, and the value of x in the Al_x Ga_1-x As thereof is 0.30 to 0.60.

17. The light-sensing device as defined in claim 1, wherein said emitted light is diffracted in at least two orthogonal planes by said diffraction grating surface.