System for real-time control of semiconductor wafer polishing including heater

• US 5,762,537 A
• Filed: 03/21/1997
• Issued: 06/09/1998
• Est. Priority Date: 08/25/1993
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Doan, Trung Tri
• Primary Examiner(s): Rose, Robert A.
• Assistant Examiner(s): NGUYEN, GEORGE BINH MINH
• Application Number:
  US08/821,936
• Time in Patent Office: 445 Days
• Field of Search: 451/5, 451/41, 451/53, 451/285, 451/289, 451/449, 451/446, 451/55, 451/59, 451/60, 451/389, 451/7, 451/488
• US Class Current: 451/7
• CPC Class Codes: B23Q 15/013 Control or regulation of feed movement B23Q15/12 takes precedence
• CPC Class Codes: B23Q 15/12 Adaptive control, i.e. adjusting itself to have a performance which is optimum according to a preassigned criterion
• CPC Class Codes: B24B 13/015 of television picture tube viewing panels, headlight reflectors or the like
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/015 Temperature control
• CPC Class Codes: B24B 37/107 in a rotary movement only, about an axis being stationary during lapping
• CPC Class Codes: B24B 37/12 Lapping plates for working plane surfaces
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 49/003 involving acoustic means
• CPC Class Codes: B24B 49/02 according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent B24B49/12 takes precedence
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/10 involving electrical means B24B49/02, B24B49/08 take precedence
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• CPC Class Codes: G05B 19/404 characterised by control arrangements for compensation, e.g. for backlash, overshoot, tool offset, tool wear, temperature, machine construction errors, load, inertia G05B19/19, G05B19/41 take precedence
• CPC Class Codes: G05B 2219/34403 RTI real time, kernel, processing
• CPC Class Codes: G05B 2219/37398 Thickness
• CPC Class Codes: G05B 2219/37602 Material removal rate
• CPC Class Codes: G05B 2219/45026 Circuit board, pcb
• CPC Class Codes: G05B 2219/45199 Polish
• CPC Class Codes: G05B 2219/45232 : CMP chemical mechanical polishing of wafer
• CPC Class Codes: G05B 2219/49052 : Accessory, coolant
• CPC Class Codes: G05B 2219/49057 : Controlling temperature of workpiece, tool, probe holder

Abstract

A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Claims

1. A system for polishing a semiconductor wafer, the system comprising:

a platen subassembly defining a polishing area, and having a hollow interior defining a fluid passage;

a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;

a pump in fluid communication with the fluid passage and conducting fluid to the fluid passage;

means for supplying a slurry to the wafer;

means for heating the wafer while the wafer face is being polished, the heating means including means for changing the composition of the slurry; and

a heating element heating the fluid that flows through the hollow interior, the rate of flow of fluid through the hollow interior being controllable, and the temperature of fluid flowing through the hollow interior being controllable.

2. A system in accordance with claim 1 and further comprising a heating filament supported by the polishing head.

3. A system for polishing a semiconductor wafer, the system comprising:

a platen subassembly defining a polishing area, and having a hollow interior defining a fluid passage;

a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;

pump means in fluid communication with the fluid passage and for conducting fluid to the fluid passage at a controllable rate;

supply means for supplying a slurry to the wafer;

heater means for heating the wafer while the wafer face is being polished, the heating means including selection means for changing the composition of the slurry; and

heating element means for heating the fluid that flows through the hollow interior, wherein the temperature of fluid flowing through the hollow interior is controllable.

4. A system in accordance with claim 3 wherein the pump means comprises a liquid pump which conducts liquid through the hollow interior.

5. A system for polishing a semiconductor wafer, the system comprising:

a platen subassembly defining a polishing area, and having a hollow interior defining a fluid passage;

a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;

a pump in fluid communication with the fluid passage and conducting fluid to the fluid passage;

a slurry supply system configured to supply a slurry to the wafer;

a plurality of containers configured to contain slurries, and a valve configured to couple a selected container to the slurry supply system;

a plurality of controllable pistons provided on the polishing head carrier and operative to contact the semiconductor wafer, the controllable pistons being positionable at extended positions and retracted positions to apply the localized pressures to the semiconductor wafer; and

a heating element heating the fluid that flows through the hollow interior of the platen subassembly, the rate of flow of fluid through the hollow interior being controllable, and the temperature of fluid flowing through the hollow interior being controllable.

6. A system in accordance with claim 5 and further comprising a heating filament supported by the polishing head.