Method for depositing magnetic film on both substrate surfaces and mechanism for performing same

• US 5,762,766 A
• Filed: 11/13/1996
• Issued: 06/09/1998
• Est. Priority Date: 11/20/1995
• Status: Expired due to Term

• Current Assignee: Anelva Corporation (Canon Inc.)
• Original Assignee: Anelva Corporation (Canon Inc.)
• Inventors: Kurita, Takaki, Watanabe, Naoki, Yamada, Naoki
• Primary Examiner(s): Nguyen, Nam
• Application Number:
  US08/747,834
• Time in Patent Office: 573 Days
• Field of Search: 204/192.12, 204/192.13, 204/192.15, 204/192.2, 204/298.03, 204/298.06, 204/298.19, 204/298.2, 204/298.26, 204/298.28
• US Class Current: 204/192.2
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: G11B 5/851 Coating a support with a magnetic layer by sputtering
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3426 Material
• CPC Class Codes: H01J 37/3455 Movable magnets

Abstract

A sputtering method includes depositing a magnetic thin film on both surfaces of a substrate by magnetron sputtering, wherein magnetic assemblies of magnetron cathodes form a magnetic field asymmetric to a rotation axis perpendicular to the substrate on a target, and a pair of magnet assemblies of magnetron cathodes opposing each other rotate at the same speed and in the same direction. A sputtering mechanism for depositing a magnetic thin film on both surfaces of the substrate by magnetron sputtering, includes a controller system for controlling a rotation drive unit of each magnet assembly on a pair of magnetron cathodes being held in common.

Claims

1. A sputtering method of depositing a magnetic thin film on both surfaces of a substrate by magnetron sputtering, comprising the steps of:

establishing a magnetic field asymmetric to a rotation axis perpendicular to the substrate over a target with a pair of magnetic assemblies of magnetron cathodes that oppose each other; and

rotating the pair of magnetic assemblies of magnetron cathodes at the same speed and in the same direction.

2. A sputtering method according to claim 1, wherein a bias power is applied to the substrate during deposition.

3. A sputtering method according to either of claim 1, wherein the rotation speed of each magnet assembly is controlled while detecting the rotation speed and/or the phase difference of each magnet assembly.

5. A sputtering method according to claim 2, wherein the phase difference between the magnetic assemblies is set to 180 degrees.

6. A sputtering method according to claim 2, wherein a bias power is applied to the substrate during deposition.

7. A sputtering method according to claim 2, wherein the rotation speed of each magnet assembly is controlled while detecting the rotation speed and/or the phase difference of each magnet assembly.

4. A sputtering method of depositing a magnetic thin film on both surfaces of a substrate by magnetron sputtering, comprising the steps of:

establishing a magnetic field asymmetric to a rotation axis perpendicular to the substrate over a target with a pair of magnetic assemblies of magnetron cathodes that oppose each other;

setting a phase difference of the pair of magnetic assemblies of magnetron cathodes so that a coercive force of the magnetic thin film is uniform in a radial direction of the substrate; and

rotating the pair of magnetic assemblies of magnetron cathodes at the same speed and in the same direction.

8. A sputtering mechanism for depositing a magnetic thin film on both surfaces of a substrate by magnetron sputtering, comprising:

a pair of magnetic assemblies of magnetron cathodes that oppose each other;

a rotation drive unit for rotating each of the magnetic assemblies; and

a common means for controlling the rotation drive units.

9. A sputtering mechanism according to claim 8, wherein the controller means comprises a pulse control driver for transmitting pulse drive signals to each rotation drive unit, a programmable controller for transmitting control signals to the pulse control driver, and a clock oscillating circuit for supplying clock pulses to each pulse control driver.

10. A sputtering mechanism according to claim 8, wherein the controller means further comprises a detecting unit for independently detecting the rotation speed and the phase difference of each magnet assembly.

11. A sputtering mechanism according to claim 8, wherein the rotation drive system is a servo motor or a stepping motor.