Target for cathodic sputtering and method for producing the target

• US 5,762,768 A
• Filed: 08/08/1996
• Issued: 06/09/1998
• Est. Priority Date: 08/18/1995
• Status: Expired due to Fees

• Current Assignee: Heraeus Holding GMBH
• Original Assignee: WC Heraeus GmbH (Heraeus Holding GMBH)
• Inventors: Goy, Karl-Heinz, Lupton, David Francis, Serole, Bernard, Bohmeier, Hans, Scholz, Friedhold, Schielke, Jorg
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US08/693,988
• Time in Patent Office: 670 Days
• Field of Search: 204/192.29, 204/298.13, 75/234, 501/134, 419/19, 419/31, 419/42, 419/49
• US Class Current: 204/298.13
• CPC Class Codes: C04B 35/01 based on oxide ceramics
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 μm to 20 μm. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.

Claims

1. In a target for cathodic sputtering formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of its theoretical density, and with a sub-stoichiometric oxygen content, the improvement wherein the target has a minimum of 90% by weight of a crystalline phase which is formed as a solid solution of indium oxide and tin oxide, and said powder has an average grain size ranging from 2 μ

m to 20 μ

m.

2. The target according to claim 1, wherein the crystalline phase has a minimum of 97% by weight of said solid solution.

3. The target according to claim 2, wherein the crystalline phase has the molecular lattice of indium oxide.

4. The target according to claim 3, wherein the solid solution phase is produced by hot-pressing or hot isostatic-pressing of indium oxide/tin oxide powder particles whose oxygen content decreases from the outside to the inside.

5. The target according to claim 4, wherein the powder particles have an oxidic outer skin which encloses a core of a metallic phase.

6. The target according to claim 5 wherein the powder particles have a metallic phase whose indium content is a minimum of 50% by weight.

7. The target according to claim 1, wherein the crystalline phase has the molecular lattice of indium oxide.

8. The target according to claim 1, wherein the solid solution phase is produced by hot-pressing or hot isostatic-pressing of indium oxide/tin oxide powder particles whose oxygen content decreases from the outside to the inside.

9. The target according to claim 8, wherein the powder particles have an oxidic outer skin which encloses a core of a metallic phase.

10. The target according to claim 9 wherein the powder particles have a metallic phase whose indium content is a minimum of 50% by weight.

11. In a method for producing a target of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a sub-stoichiometric oxygen content for cathodic sputtering, the method using a starting powder of indium oxide and tin oxide, and compressing the starting powder through hot-pressing or hot isostatic-pressing, the improvement wherein the starting powder is produced by sub-stoichiometrically oxidizing powdered indium tin metal to form an oxidic phase and the target has a minimum density of 95% of its theoretical density.

12. The method according to claim 11, wherein the starting powder is produced by atomizing an indium tin metal melt in an oxidizing atmosphere.

13. The method according to claim 11, wherein a starting powder is used which has a metal phase whose indium content is a minimum of 50% by weight up to about 90% by weight.

14. The method according to claim 11, wherein the starting powder has an average particle size ranging from 2 μ

m to 20 μ

m.

15. The method according to claim 14, wherein the oxidic phase of the particles of the starting powder has a crystalline solid solution phase.

16. The method according to claim 15, wherein the crystalline solid solution phase is present in the form of the molecular lattice of indium oxide.

17. The method according to claim 16, wherein the percentage of the solid solution phase is a minimum of 90% by weight, of the total weight of the starting powder.

18. The method according to claim 17, wherein the percentage of solid solution phase is a minimum of 97% by weight of the total weight of starting powder.

19. The method according to claim 15, wherein the percentage of the solid solution phase is a minimum of 90% by weight, of the total weight of the starting powder.

20. The method according to claim 19, wherein the percentage of solid solution phase is a minimum of 97% by weight of the total weight of starting powder.

21. The method according to claim 11, wherein the oxidic phase of the particles of the starting powder has a crystalline solid solution phase.

22. The method according to claim 21, wherein the crystalline solid solution phase has the molecular lattice of indium oxide.