Process of exactly patterning layer to target configuration by using photo-resist mask formed with dummy pattern
First Claim
Patent Images
1. A process for etching a given pattern in a first layer, comprising the steps of:
- a) depositing a resist layer on said first layer;
b) transferring a mask pattern to said resist layer, said mask pattern having a main pattern image corresponding to said given pattern and a stress-relief pattern image corresponding to a stress-relief pattern comprising at least one recess to be formed in said resist layer;
c) developing said main pattern image and said stress-relief pattern image in said resist layer so as to form said resist layer into a resist mask having said at least one recess spaced from said first layer by a bottom portion of said photo-resist mask;
d) baking said resist mask so as to increase an adhesion; and
e) etching said given pattern into said first layer by using said resist mask.
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Accused Products
Abstract
Tension takes place in a surface of a photo-resist mask due to a shrinkage in a post-development bake, and a recess formed in the photo-resist mask takes up the tension so as to maintain the adhesion to a semiconductor substrate and prevent a resist pattern from undesirable deformation.
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Citations
9 Claims
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1. A process for etching a given pattern in a first layer, comprising the steps of:
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a) depositing a resist layer on said first layer; b) transferring a mask pattern to said resist layer, said mask pattern having a main pattern image corresponding to said given pattern and a stress-relief pattern image corresponding to a stress-relief pattern comprising at least one recess to be formed in said resist layer; c) developing said main pattern image and said stress-relief pattern image in said resist layer so as to form said resist layer into a resist mask having said at least one recess spaced from said first layer by a bottom portion of said photo-resist mask; d) baking said resist mask so as to increase an adhesion; and e) etching said given pattern into said first layer by using said resist mask. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A process of forming an etched pattern on a first layer, said etched pattern having a given configuration, comprising the steps of:
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a) forming the first layer; b) coating said layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area exposing a portion of said first layer in said first portion, and having at least one recess in said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said first layer and said photo-resist mask; and g) etching the exposed portion of said first layer so as to form said pattern in said first layer to said given configuration.
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9. A process of forming a layer to a given pattern, comprising the steps of:
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a) forming a conductive layer on a substrate; b) coating said conductive layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area located within said first portion exposing a part of said conductive layer, and having at least one recess located within said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said conductive layer and said photo-resist mask; g) depositing a substance on said part of said conductive layer so as to form at least one column of said substance; h) removing said photo-resist mask; and l) forming said conductive layer to said given configuration by using said at least one column of said substance as a mask.
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Specification