Connection component with releasable leads

• US 5,763,941 A
• Filed: 10/24/1995
• Issued: 06/09/1998
• Est. Priority Date: 10/24/1995
• Status: Expired due to Term

• Current Assignee: Tessera, Inc. (Adeia, Inc.)
• Original Assignee: Tessera, Inc. (Adeia, Inc.)
• Inventors: Fjelstad, Joseph
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/547,170
• Time in Patent Office: 959 Days
• Field of Search: 257/642, 257/643, 257/669, 257/674, 257/690, 257/692, 257/693, 257/700, 257/784, 257/773, 174/260, 361/767
• US Class Current: 257/669
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/5387 Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H05K 3/4092 Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Abstract

A connection component for a microelectronic device such as a semiconductor chip incorporates a dielectric layer and leads extending across a surface of the dielectric layer. Each lead has one end permanently fastened to the dielectric layer and another end releasably bonded to the dielectric layer. The releasable end is held in place by a bond having a relatively low peel strength, desirably less than about 0.35×10⁶ dynes/cm.

Claims

1. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead being permanently connected to said dielectric structure,

(c) a release interface between said second region of said lead and said dielectric structure having a peel strength of less than about 0.35×

10⁶ dynes/cm, whereby said release interface releasably connects said second region to said dielectric structure so that said second region can be detached from the dielectric structure by forcing the lead downwardly relative to the dielectric structure.

2. A component as claimed in claim 1 wherein said peel strength of said interface is less than about 0.175×

10⁶ dynes/cm.

13. A component as claimed in claim 1 or claim 3 or claim 4 or claim 5 or claim 11 wherein said permanent connection between said first region of each said lead and said dielectric element includes a fastening element secured to said first region of each said lead and extending into said dielectric structure from said surface.

14. A component as claimed in claim 13 wherein each said fastening element is mechanically interlocked with said dielectric element.

15. A component as claimed in claim 14 wherein said surface is a bottom surface of said dielectric element and wherein said dielectric element has a top surface, each said fastening element extending through a hole in said dielectric layer to said top surface, each said fastening element including a head extending outwardly over a portion of said top surface from such hole.

16. A component as claimed in claim 13 wherein each said fastening element is metallic and wherein said first region of each said lead includes a metallic portion metallurgically bonded to the fastening element.

20. A component as claimed in claim 1 or claim 3 or claim 4 or claim 5 or claim 11 wherein each said lead includes a structural metal extending throughout the first and second regions and a contact bonding material overlying the structural metal and facing away from the dielectric layer in the second region of each said lead, said contact bonding material being adapted to bond with contacts of a microelectronic element.

3. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface and a polymeric material at said surface;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead being a permanently connected to said dielectric structure;

(c) a release interface between said second region of said lead and said dielectric structure, said release interface releasably connecting said second region to said dielectric structure so that said second region can by detached from the dielectric structure by forcing the lead downwardly relative to the dielectric structure, said release interface including a release metal on said second region of said lead directly abutting said polymeric material at said surface, wherein said interface is formed by electroless plating of said release metal on said polymeric material.

6. A component as claimed in claim 3 or claim 4 or claim 5 wherein said release metal is selected from the group consisting of copper, nickel, gold, palladium and alloys.

7. A component as claimed in claim 3 or claim 4 or claim 5 wherein said release metal consists essentially of copper.

8. A component as claimed in claim 3 or claim 4 or claim 5 wherein said polymeric material at said surface is selected from the group consisting of polyimide, polyamide, polyetherimide.

9. A component as claimed in claim 8 wherein said polymeric material at said surface consists essentially of polyimide.

4. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface and a polymeric material at said surface;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead being a permanenty connected to said dielectric structure;

(c) a release interface between said second region of said lead and said dielectric structure, said release interface releasably connecting said second region to said dielectric structure so that said second region can be detached from the dielectric structure by forcing the lead downwardly relative to the dielectric structure, said release interface including a release metal on said second region of said lead directly abutting said polymeric material at said surface, wherein said interface is formed by chemical vapor deposition of said release metal on said polymeric material.

5. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface and a polymeric material at said surface;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead being a permanently connected to said dielectric structure;

(c) a release interface between said second region of said lead and said dielectric structure, said release interface releasably connecting said second region to said dielectric structure so that said second region can be detached from the dielectric structure by forcing the lead downwardly relative to the dielectric structure, said release interface including a release metal on said second region of said lead directly abutting said polymeric material at said surface, wherein said polymeric material in said release interface is substantially unoxidized.

10. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface and a polymeric material at said surface;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead being permanently connected to said dielectric structure,

(c) a release interface between said second region of said lead and said dielectric structure, said release interface releasably connecting said second region to said dielectric structure so that said second region can be detached from the dielectric structure by forcing the lead downwardly relative to the dielectric structure, said release interface including a first release metal bonded to said polymeric material at said surface and a second release metal on said second region of said lead, said second release metal being releasable from said first release metal.

11. A component as claimed in claim 10 wherein said first release metal is selected from the group consisting of chromium, nickel and alloys.

12. A component as claimed in claim 11 wherein said second release metal is selected from the group consisting of gold, copper, nickel, titanium, and alloys.

17. A component as claimed in claim 3 or claim 4 or claim 5 or claim 11 wherein said permanent connection between said first region and said dielectric structure includes a bond interface having higher peel strength than said release interface.

18. A component as claimed in claim 17 wherein said bond interface includes a layer of an anchor metal selected from the group consisting of nickel, and chromium directly abutting said polymeric material on said bottom surface.

19. A component as claimed in claim 18 wherein said layer of anchor metal is formed by sputtering said anchor metal onto said bottom surface.

21. A connection component for making a semiconductor assembly, said component including:

(a) a support structure including a dielectric structure having a surface including, said first and second zones having different surface conditions;

(b) a plurality of leads extending along the surface of said dielectric structure, each said lead having a first region and a second region, said first region of each said lead overlying said first zone of said surface, said second region of each said lead overlying said second zone of said surface, said different surface conditions in said first and second zones providing a release interface having a relatively low peel strength between said lead in said second region and said surface of the dielectric structure and a bond interface having a relatively high peel strength between said lead in said first region and said bottom surface of the dielectric structure, whereby said second region of each said lead can be peeled away from said bottom surface of said dielectric structure and the first region is securely anchored to said bottom surface.