Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response

• US 5,764,567 A
• Filed: 11/27/1996
• Issued: 06/09/1998
• Est. Priority Date: 11/27/1996
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Parkin, Stuart Stephen Papworth
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): TRAN, MICHAEL THANH
• Application Number:
  US08/758,614
• Time in Patent Office: 559 Days
• Field of Search: 365/171, 365/173
• US Class Current: 365/173
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic tunnel junction device, usable as a memory cell or an external magnetic field sensor, has a tunneling magnetoresistance response, as a function of applied magnetic field, that is substantially symmetric about zero field. The magnetic tunnel junction is made up of two ferromagnetic layers, one of which has its magnetic moment fixed and the other of which has its magnetic moment free to rotate, an insulating tunnel barrier layer between the ferromagnetic layers for permitting tunneling current perpendicularly through the layers, and a nonferromagnetic layer located at the interface between the tunnel barrier layer and one of the ferromagnetic layers. The nonferromagnetic layer increases the spacing between the tunnel barrier layer and the ferromagnetic layer at the interface and thus reduces the magnetic coupling between the fixed and free ferromagnetic layers, which has been determined to be the cause of unsymmetric tunneling magnetoresistance response about zero field. Even though the nonferromagnetic interface layer presents nonspin-polarized electronic states at the tunnel barrier layer interface, it unexpectedly does not cause a suppression of the tunneling magnetoresistance.

Claims

1. A magnetic tunnel junction device comprising:

a first electrode comprising a fixed ferromagnetic layer whose magnetization is fixed in a preferred direction in the presence of an applied magnetic field;

a second electrode comprising a free ferromagnetic layer whose magnetization is free to rotate in the presence of an applied magnetic field;

an insulating tunneling layer located between the fixed ferromagnetic layer of the first electrode and the free ferromagnetic layer of the second electrode for permitting tunneling current in a direction generally perpendicular to the fixed and free ferromagnetic layers;

a nonferromagnetic interface layer located between and in contact with the insulating tunneling layer and one of said ferromagnetic layers for increasing the spacing and thereby decreasing the magnetic coupling between the fixed and free ferromagnetic layers; and

a substrate, the first and second electrodes, tunneling layer, and nonferromagnetic interface layer being formed on the substrate.

2. The magnetic tunnel junction device according to claim 1 wherein the magnetization directions of the fixed and free ferromagnetic layers are substantially parallel or antiparallel to one another in the absence of an applied magnetic field.

3. The magnetic tunnel junction device according to claim 1 wherein the free ferromagnetic layer'"'"'s magnetization direction is substantially perpendicular to the pinned ferromagnetic layer'"'"'s magnetization direction in the absence of an applied magnetic field.

4. The magnetic tunnel junction device according to claim 1 further comprising an antiferromagnetic layer in contact with the fixed ferromagnetic layer of the first electrode for pinning the magnetization of the fixed ferromagnetic layer in its preferred direction.

5. The magnetic tunnel junction device according to claim 1 wherein the fixed ferromagnetic layer has a coercivity sufficiently high such that in the presence of an applied magnetic field, its magnetization is fixed by its intrinsic magnetic anisotropy.

6. The magnetic tunnel junction device according to claim 1 wherein the first electrode is located between the substrate and the insulating tunneling layer.

7. The magnetic tunnel junction device according to claim 1 wherein the nonferromagnetic interface layer is located between and in contact with the insulating tunnel barrier layer and the free ferromagnetic layer.

8. The magnetic tunnel junction device according to claim 7 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni-Fe.

9. The magnetic tunnel junction device according to claim 1 wherein the material of the nonferromagnetic interface layer is selected from the group consisting of Cu, Ag, and Au.

10. A magnetic tunnel junction memory cell having two magnetic states and usable in a nonvolatile magnetic memory array of memory cells, the array being connected to read/write circuitry for altering and detecting the magnetic state of individual memory cells in the array, the memory cell comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field caused by current from the read/write circuitry;

a free ferromagnetic layer whose magnetic moment is free to rotate between directions generally parallel and antiparallel to the magnetic moment of the fixed ferromagnetic layer when exposed to an applied magnetic field caused by current from the read/write circuitry;

an insulating tunnel barrier layer located between the fixed ferromagnetic layer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed and free ferromagnetic layers; and

a nonferromagnetic interface layer located between and in contact with the insulating tunnel barrier layer and one of said ferromagnetic layers for increasing the spacing and thereby decreasing the magnetic coupling between the fixed and free ferromagnetic layers;

whereby when the ferromagnetic layers are connected to the read/write circuitry, the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the ferromagnetic layers is determined by said parallel or antiparallel magnetic moment of said free ferromagnetic layer, the value of said electrical resistance thereby allowing the magnetic state of the memory cell to be determined.

11. The magnetic tunnel junction memory cell according to claim 10 further comprising an antiferromagnetic layer in contact with the fixed ferromagnetic layer for pinning the magnetization of the fixed ferromagnetic layer in its preferred direction by interfacial exchange coupling.

12. The magnetic tunnel junction memory cell according to claim 10 wherein the fixed ferromagnetic layer has a coercivity sufficiently high such that in the presence of an applied magnetic field, its magnetization is fixed by its intrinsic magnetic anisotropy.

13. The magnetic tunnel junction memory cell according to claim 10 wherein the nonferromagnetic interface layer is located between and in contact with the insulating tunnel barrier layer and the free ferromagnetic layer.

14. The magnetic tunnel junction memory cell according to claim 13 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni-Fe.

15. The magnetic tunnel junction memory cell according to claim 10 wherein the material of the nonferromagnetic interface layer is selected from the group consisting of Cu, Ag, and Au.

16. A magnetic tunnel junction magnetic field sensor for detecting external magnetic fields, the sensor comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field in the range of the external magnetic field to be sensed;

a free ferromagnetic layer whose magnetic moment is oriented generally perpendicular to the moment of the fixed ferromagnetic layer in the absence of an applied magnetic field and is free to rotate away from said perpendicular orientation in the presence of an applied magnetic field in the range of the external magnetic field to be sensed;

an insulating tunnel barrier layer located between the fixed ferromagnetic layer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed and free ferromagnetic layers; and

a nonferromagnetic interface layer located between and in contact with the insulating tunnel barrier layer and one of said ferromagnetic layers for increasing the spacing and thereby decreasing the magnetic coupling between the fixed and free ferromagnetic layers;

whereby when the ferromagnetic layers are exposed to the external magnetic field to be sensed, the moment of the free ferromagnetic layer will change its orientation relative to the moment of the fixed ferromagnetic layer and the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the ferromagnetic layers will be altered, thereby allowing the external magnetic field to be detected.

17. The magnetic tunnel junction sensor according to claim 16 further comprising an antiferromagnetic layer in contact with the fixed ferromagnetic layer for pinning the magnetization of the fixed ferromagnetic layer in its preferred direction by interfacial exchange coupling.

18. The magnetic tunnel junction sensor according to claim 16 wherein the fixed ferromagnetic layer has a coercivity sufficiently high such that in the presence of an applied magnetic field with a field strength in the range of the external magnetic field to be sensed, its magnetization is fixed by its intrinsic magnetic anisotropy.

19. The magnetic tunnel junction sensor according to claim 16 wherein the nonferromagnetic interface layer is located between and in contact with the insulating tunnel barrier layer and the free ferromagnetic layer.

20. The magnetic tunnel junction sensor according to claim 17 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni-Fe.

21. The magnetic tunnel junction sensor according to claim 16 wherein the material of the nonferromagnetic interface layer is selected from the group consisting of Cu, Ag, and Au.