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Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response

  • US 5,764,567 A
  • Filed: 11/27/1996
  • Issued: 06/09/1998
  • Est. Priority Date: 11/27/1996
  • Status: Expired due to Term
First Claim
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1. A magnetic tunnel junction device comprising:

  • a first electrode comprising a fixed ferromagnetic layer whose magnetization is fixed in a preferred direction in the presence of an applied magnetic field;

    a second electrode comprising a free ferromagnetic layer whose magnetization is free to rotate in the presence of an applied magnetic field;

    an insulating tunneling layer located between the fixed ferromagnetic layer of the first electrode and the free ferromagnetic layer of the second electrode for permitting tunneling current in a direction generally perpendicular to the fixed and free ferromagnetic layers;

    a nonferromagnetic interface layer located between and in contact with the insulating tunneling layer and one of said ferromagnetic layers for increasing the spacing and thereby decreasing the magnetic coupling between the fixed and free ferromagnetic layers; and

    a substrate, the first and second electrodes, tunneling layer, and nonferromagnetic interface layer being formed on the substrate.

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