Substrate processing apparatus and substrate processing method

• US 5,766,360 A
• Filed: 03/25/1993
• Issued: 06/16/1998
• Est. Priority Date: 03/27/1992
• Status: Expired due to Term

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: Toshiba Kikai Kabushiki Kaisha (Shibaura Machine Co., Ltd.), Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sato, Yuusuke, Honda, Takaaki, Ohmine, Toshimitsu
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US08/036,894
• Time in Patent Office: 1,909 Days
• Field of Search: 118/715, 118/719, 118/708, 118/712, 118/666, 204/298.25, 156/626.1, 156/626.2, 156/345, 427/8, 427/9, 427/10, 437/8
• US Class Current: 118/666
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67184 characterized by the presence of more than one transfer chamber
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/67242 Apparatus for monitoring, sorting or marking testing or measuring during manufacture H01L22/00, marks per se H01L23/544; testing individual semiconductor devices G01R31/26

Abstract

A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

Claims

1. A substrate processing apparatus, comprising:

a process chamber for performing a prescribed process with respect to a substrate;

an inspection chamber, connected to said process chamber, for performing a prescribed analysis with respect to said substrate;

a transfer assembly to load and unload said substrate between said process chamber and said inspection chamber;

an analytic information storage memory to store analytic information of said substrate received from said inspection chamber; and

an analytic information analyzer which retrieves said analytic information from said analytic information storage memory and analyzes said analytic information while said substrate is transferred to the outside of said inspection chamber by said transfer assembly or after said substrate is transferred to the outside of said inspection chamber by said transfer assembly,

wherein at least one of said process chamber and said inspection chamber includes a load lock chamber having a volume less than volumes of the other chambers for changing the atmosphere in said process chamber or inspection chamber into the atmospheric air atmosphere or a vacuum atmosphere.

2. The substrate processing apparatus as set forth in claim 1, further comprising:

a closing assembly, disposed between said process chamber and said inspection chamber, for air-tightly closing said process chamber and said inspection chamber.

3. The substrate processing apparatus as set forth in claim 2,

wherein said closing assembly is adapted to operate in an interlocking relationship with said transfer assembly.

4. The substrate processing apparatus as set forth in claim 1,

wherein said transfer assembly is disposed in a transfer chamber disposed adjacent to said process chamber and said inspection chamber.

5. The substrate processing apparatus as set forth in claim 1,

wherein said analytic information analyzer is adapted to analyze said analytic information while or after said substrate is processed in said process chamber.

6. The substrate processing apparatus as set forth in claim 1,

wherein said process chamber is a thin film growth chamber for forming a thin film on the surface of said substrate, said thin film growth chamber having a gas supply unit and a gas exhaust unit,

wherein said substrate processing apparatus further comprises an exhaust gas analyzing unit connected to said gas exhaust unit, for analyzing the amount, the composition, or both the amount and composition of an exhaust gas;

and

a reference memory;

a record/analysis/determination unit to set the amount, the composition, or both the amount and composition of supply gas supplied to said thin film growth chamber and process conditions of said thin film growth chamber;

wherein said record/analysis/determination unit evaluates a thin film of said substrate according to an exhaust gas analysis result received from said exhaust gas analyzing unit by comparing the exhaust gas analysis result with reference information which has been stored in said reference memory.

7. The substrate processing apparatus as set forth in claim 6, further comprising:

a supply gas analyzing unit connected to said gas supply unit, for analyzing the amount and composition of said supply gas,

wherein said thin film growth chamber includes a pressure gauge and a thermometer for measuring the pressure and temperature therein,

wherein said supply gas analyzing unit, said pressure gauge, and said thermometer are connected to said record/analysis/determination unit, and

wherein said record/analysis/determination unit evaluates a thin film of said substrate according to results of analysis of said supply gas and said exhaust gas and measurement results of said pressure gauge and said thermometer by comparing the results of analysis of the supply gas and the measurement results of the pressure gauge and the thermometer with reference information which has been stored in said reference memory.

8. The substrate processing apparatus as set forth in claim 7,

wherein said thin film growth chamber includes a substrate holder and a rotation meter, said holder for holding said substrate, said rotation meter for measuring rotational speed of said substrate holder,

wherein said rotation meter is connected to said record/analysis/determination unit, and

wherein said record/analysis/determination unit evaluates a thin film of said substrate according to analytic results of said supply gas and said exhaust gas, the pressure and temperature in said thin film growth chamber, and the rotational speed of said substrate holder by comparing the rotational speed with reference information which has been stored in said reference memory.

9. The substrate processing apparatus as set forth in claim 1,

wherein said transfer assembly is disposed in a plurality of transfer chambers, each of which is arranged adjacent to said process chamber and said inspection chamber, and

wherein a load lock chamber having a load lock mechanism is disposed between said transfer chambers, said load lock mechanism being adapted to change the atmosphere in said load lock chamber into the atmospheric air atmosphere or a vacuum atmosphere.

10. The substrate processing apparatus as set forth in claim 9,

wherein said load lock chamber has process function means with respect to said substrate.

11. The substrate processing apparatus as set forth in claim 9,

wherein a volume of said load lock chamber is less than volumes of the other chambers.

12. A substrate processing apparatus, comprising:

a process chamber for performing a prescribed process with respect to a substrate;

an inspection chamber, connected to said process chamber, for performing prescribed analyses with respect to said substrate before and after performing the prescribed process;

a transfer assembly to load and unload said substrate between said process chamber and said inspection chamber; and

a controller which controls the process chamber, the inspection chamber and the transfer assembly and calculates properties of the substrate in accordance with analysis results from the inspection chamber with respect to the substrate before and after performing the prescribed process.

13. The substrate processing apparatus as set forth in claim 12,

wherein the process chamber performs a process with respect to the substrate;

the inspection chamber performs thickness measurements with respect to the substrate before and after performing the process; and

the control unit calculates the thickness difference of the substrate in accordance with the results of the thickness measurements from the inspection chamber.