Oxide strip that improves planarity
First Claim
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1. A method of making an integrated circuit in a silicon substrate having a set of transistors formed in active areas of said substrate and interconnections therebetween, comprising the steps of:
- preparing said substrate, including forming a pad oxide thereon;
etching at least one isolation trench about at least one active area;
filling said at least one isolation trench with fill oxide and removing excess fill oxide outside said at least one isolation trench, thereby forming a composite layer of oxide containing said pad oxide and said fill oxide meeting at at least one oxide interface having interface sidewalls;
etching said composite layer of oxide by reacting said composite layer of oxide with HF in a vacuum to form a first reaction product, said first reaction product containing a removal amount of Si, having a first volume, removed from said layer of oxide;
reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second volume substantially greater than said first volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said etching step is self-limiting;
continuing said step of reacting said oxide with HF until said pad oxide thickness is removed;
removing said second reaction product;
forming transistors in said active areas; and
interconnecting said transistors to form said integrated circuit.
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Abstract
A process for stripping thin layers of oxide such as sacrificial pad oxide employs etching chemistry that widens cracks to remove shallow cracks and limit the widening of deep cracks, thereby producing a final oxide surface on thick layers of oxide that is less rough than prior art methods and enabling the fabrication of oxide-filled trenches that have geometries and/or surface smoothness that were previously impossible.
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Citations
26 Claims
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1. A method of making an integrated circuit in a silicon substrate having a set of transistors formed in active areas of said substrate and interconnections therebetween, comprising the steps of:
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preparing said substrate, including forming a pad oxide thereon; etching at least one isolation trench about at least one active area; filling said at least one isolation trench with fill oxide and removing excess fill oxide outside said at least one isolation trench, thereby forming a composite layer of oxide containing said pad oxide and said fill oxide meeting at at least one oxide interface having interface sidewalls; etching said composite layer of oxide by reacting said composite layer of oxide with HF in a vacuum to form a first reaction product, said first reaction product containing a removal amount of Si, having a first volume, removed from said layer of oxide; reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second volume substantially greater than said first volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said etching step is self-limiting; continuing said step of reacting said oxide with HF until said pad oxide thickness is removed; removing said second reaction product; forming transistors in said active areas; and interconnecting said transistors to form said integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of making an integrated circuit in a silicon substrate having a set of transistors formed in active areas of said substrate and interconnections therebetween, comprising the steps of:
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preparing said substrate, including forming a pad oxide thereon; etching at least one isolation trench about at least one active area having isolation sidewalls at an angle greater than 75°
;filling said at least one isolation trench with fill oxide and removing excess fill oxide outside said at least one isolation trench, thereby forming a composite layer of oxide containing said pad oxide and said fill oxide meeting at at least one oxide interface having interface sidewalls; etching said composite layer of oxide by reacting said composite layer of oxide with HF in a vacuum to form a first reaction product, said first reaction product containing a removal amount of Si, having a first volume, removed from said layer of oxide; reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second volume substantially greater than said first volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said etching step is self-limiting; continuing said step of reacting said oxide with HF until said pad oxide thickness is removed; removing said second reaction product; forming transistors in said active areas; and interconnecting said transistors to form said integrated circuit. - View Dependent Claims (11, 12, 13)
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14. A method of making an integrated circuit in a silicon substrate having a set of transistors formed in active areas of said substrate and interconnections therebetween, comprising the steps of:
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preparing said substrate, including forming a pad oxide thereon; etching at least one isolation trench about at least one active area; filling said at least one isolation trench with fill oxide and removing excess fill oxide outside said at least one isolation trench, thereby forming a composite layer of oxide containing said pad oxide and said fill oxide meeting at least one oxide interface having interface sidewalls; etching said composite layer of oxide by reacting said composite layer of oxide with HF in a vacuum to form a first reaction product, said first reaction product containing a removal amount of Si, having a first volume, removed from said layer of oxide; reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second volume substantially greater than said first volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said etching step is self-limiting; continuing said step of reacting said oxide with HF until said pad oxide thickness is removed and removing said second reaction product; forming transistors in said active areas; depositing at least one layer of interlevel oxide insulation above said transistors, said interlevel oxide having a having an interlevel oxide top surface and an initial interlevel oxide thickness and containing at least one defect having defect sidewalls, a defect bottom, an initial defect depth and an initial defect thickness; reacting said interlevel oxide with HF in a vacuum to form a first reaction product, said first reaction product having a first interlevel volume, removed from said layer of interlevel oxide; reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second interlevel volume substantially greater than said first interlevel volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said method of etching is self-limiting; forming said second reaction product in situ on said defect sidewalls and said defect bottom until a reaction product thickness of said second reaction product blocks said defect, whereby said HF on said interlevel top surface reacts at a greater rate than said HF on said defect bottom so that said defect depth decreases; continuing said step of reacting said interlevel oxide with HF until a removal amount of said interlevel oxide is removed; and removing said second reaction product, whereby said defect has a final defect depth that is less than said initial defect depth; and interconnecting said transistors to form said integrated circuit. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of etching a layer of oxide on a semiconductor wafer, said oxide having a top surface and an initial oxide thickness and containing at least one defect having defect sidewalls, a defect bottom, an initial defect depth and an initial defect thickness, comprising the steps of:
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reacting said oxide with HF in a vacuum to form a first reaction product, said first reaction product containing a removal amount of Si, having a first volume, removed from said layer of oxide; reacting said first reaction product with NH3 in said vacuum to form a second reaction product in situ, said second reaction product having a second volume substantially greater than said first volume, said second reaction product also being substantially resistant to diffusion of HF, whereby said method of etching is self-limiting; forming said second reaction product in situ on said defect sidewalls and said defect bottom until a reaction product thickness of said second reaction product blocks said defect, whereby said HF on said top surface reacts at a greater rate than said HF on said defect bottom so that said defect depth decreases; continuing said step of reacting said oxide with HF until a removal amount of said initial oxide thickness is removed; and removing said second reaction product, whereby said defect has a final defect depth that is less than said initial defect depth. - View Dependent Claims (21, 22, 23, 24)
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25. A method of etching a layer of first material on a semiconductor wafer, said first material having a top surface and an initial first material thickness and containing at least one defect having defect sidewalls, a defect bottom, an initial defect depth and an initial defect thickness, comprising the steps of:
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reacting said first material with at least one reactant in a vacuum to form a reaction product, said reaction product containing a removal volume of Si, and having a reaction product volume substantially greater than said removal volume, said reaction product also being substantially resistant to diffusion of HF, whereby said method of etching is self-limiting; forming said reaction product in situ on said defect sidewalls and said defect bottom until a reaction product thickness of said reaction product blocks said defect, whereby said HF on said top surface reacts at a greater rate than said HF on said defect bottom so that said defect depth decreases; continuing said step of reacting said first material with HF until a removal amount of said initial first material thickness is removed; and removing said reaction product, whereby said defect has a final defect depth that is less than said initial defect depth. - View Dependent Claims (26)
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Specification