Method of making a dielectric structure for facilitating overetching of metal without damage to inter-level dielectric
First Claim
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1. A method for fabricating integrated circuits, comprising the steps of:
- (a) providing an integrated circuit structure on which transistors have been fabricated;
(b) depositing an interlevel dielectric layer, essentially comprising silicate glass, over said transistors;
(c) depositing a layer of silicon oxynitride over said interlevel dielectric layer;
(d) etching contact holes into said silicon oxynitride and interlevel dielectric layers, to expose portions of said transistors for electrical connection;
(e) depositing a layer of metal over said silicon oxynitride layer; and
(f) etching said metal layer with a plasma etch chemistry which includes chlorine, wherein said silicon oxynitride layer is etched by said plasma etch chemistry more slowly than said dielectric lever and said dielectric layer etched by said plasma etch chemistry more slowly than said metal layer; and
(g) continuing said etching step for more than 175% of the time required to clear said metal layer from flat surfaces;
whereby said silicon oxynitride layer protects said interlevel dielectric from erosion by said metal etching step.
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Abstract
Integrated circuit fabrication with a thin layer of oxynitride atop the interlevel dielectric, to provide an etch stop to withstand the overetch of the metal layer.
45 Citations
30 Claims
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1. A method for fabricating integrated circuits, comprising the steps of:
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(a) providing an integrated circuit structure on which transistors have been fabricated; (b) depositing an interlevel dielectric layer, essentially comprising silicate glass, over said transistors; (c) depositing a layer of silicon oxynitride over said interlevel dielectric layer; (d) etching contact holes into said silicon oxynitride and interlevel dielectric layers, to expose portions of said transistors for electrical connection; (e) depositing a layer of metal over said silicon oxynitride layer; and (f) etching said metal layer with a plasma etch chemistry which includes chlorine, wherein said silicon oxynitride layer is etched by said plasma etch chemistry more slowly than said dielectric lever and said dielectric layer etched by said plasma etch chemistry more slowly than said metal layer; and (g) continuing said etching step for more than 175% of the time required to clear said metal layer from flat surfaces;
whereby said silicon oxynitride layer protects said interlevel dielectric from erosion by said metal etching step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for fabricating integrated circuits, comprising the steps of:
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(a) providing an integrated circuit structure on which transistors have been fabricated; (b) depositing an interlevel dielectric layer comprising a silicate glass over said transistors; (c) depositing an insulating etch stop layer over said interlevel dielectric layer; (d) etching contact holes into said etch stop and interlevel dielectric layers, to expose portions of said transistors for electrical connection; (e) depositing a layer of metal over said etch stop; and (f) etching said metal layer with a plasma etch chemistry which etches the material of said etch stop layer more slowly than the material of said interlevel dielectric and more slowly than the material of said metal layer, and which etches said dielectric layer more slowly than the material of said metal layer; and (g) continuing said etching step for more than 175% of the time required to clear said metal layer from flat surfaces;
whereby said etch stop layer protects said interlevel dielectric from erosion by said metal etching step. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method for fabricating integrated circuits, comprising the steps of:
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(a) providing an integrated circuit structure on which transistors have been fabricated; (b) depositing an interlevel dielectric layer comprising a silicate glass over said transistors; (c) depositing an insulating etch stop layer over said interlevel dielectric layer; (d) etching contact holes into said etch stop and interlevel dielectric layers, to expose portions of said transistors for electrical connection; (e) depositing a layer of metal over said etch stop wherein said metal layer comprises an alloy of aluminum; and (f) etching said metal layer with a plasma etch chemistry which etches the material of said etch stop layer more slowly than the material of said interlevel dielectric and more slowly than the material of said metal layer, and continuing said etching step for more than 175% of the time required to clear said metal layer from flat surfaces; whereby said etch stop layer protects said interlevel dielectric from erosion by said metal etching step. - View Dependent Claims (30)
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Specification