Process for producing semiconductor components between which contact is made vertically
First Claim
1. A process for producing a semiconductor component having a contact structure for making vertical contact with a further semiconductor component, comprising the steps of:
- in a first step, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of;
a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect,in a second step, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for a subsequent fourth step,in a third step, depositing a metal into said vertical recess and onto said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, andin a fourth step, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate.
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Accused Products
Abstract
A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, conductive connection, this recess is filled with a metal so that said metal is connected to the surface of the metal contact, the rear side of the substrate is removed until the metal projects beyond the rear side, a metallization layer made of a metal having a low melting point, for example AuIn, is applied to the metal contact of the second component, the surface of the second component is provided with a planar layer, the two components are arranged vertically with respect to one another and a permanent contact is produced between the metal of the first component and the metallization layer of the second component by pressing one onto the other and heating.
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Citations
4 Claims
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1. A process for producing a semiconductor component having a contact structure for making vertical contact with a further semiconductor component, comprising the steps of:
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in a first step, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of;
a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect,in a second step, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for a subsequent fourth step, in a third step, depositing a metal into said vertical recess and onto said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, and in a fourth step, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate. - View Dependent Claims (2)
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3. A process for producing semiconductor components between which electrically conductive contact is made vertically, comprising the steps of:
- in a first step, producing a first semiconductor component including the substeps of;
in a first substep, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of;
a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect;in a second substep, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for s subsequent fourth step; in a third substep, depositing a metal into said vertical recess and into said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, and in a fourth substep, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate and producing a second semiconductor component which is to make vertical contact with said first semiconductor component and has a layer structure having a contact location with which contact is to be made, said contact location being selected from a group consisting of a contact layer of semiconductor material and a metal contact and an interconnect, in a second step, using a mask to apply a metallization layer made of a metal having a lower melting point than that of an interconnect to said contact location as a region provided for making contact with the first semiconductor component, in a third step, arranging said first and second semiconductor components above one another in such a way that the metal projecting out of the vertical recess in the substrate of the first semiconductor component is situated above the region, provided for contact-making, of said metallization layer of the second semiconductor component, and in a fourth step, producing a permanent electrically conductive contact with the metal of the first semiconductor component by heating said metallization layer. - View Dependent Claims (4)
- in a first step, producing a first semiconductor component including the substeps of;
Specification