Electrostatic discharge protection circuit

• US 5,768,078 A
• Filed: 11/12/1996
• Issued: 06/16/1998
• Est. Priority Date: 11/13/1995
• Status: Expired due to Term

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Hong, Hyeong Sun
• Primary Examiner(s): Gaffin, Jeffrey A.
• Assistant Examiner(s): JACKSON, STEPHEN W
• Application Number:
  US08/747,130
• Time in Patent Office: 581 Days
• Field of Search: 361/18, 361/56, 361/58, 361/111, 361/113, 361/115, 361/118, 361/127
• US Class Current: 361/56
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

An electrostatic discharge protection circuit comprising a first transistor formed on a semiconductor substrate adjacently to one side of an insulation oxide film region, for transferring a voltage from a first voltage terminal to an output terminal in response to a first input signal, a second transistor formed on the semiconductor substrate adjacently to the other side of the insulation oxide film region, for transferring a voltage form a second input signal, and an NPN transistor having its collector connected to the first voltage terminal, its emitter connected to the output terminal and its base connected to a bulk region of the second transistor. According to the present invention, when a semiconductor device is exposed to electrostatic discharge, the electrostatic discharge protection circuit discharges charges introduced by the electrostatic discharge before they are discharge through an internal circuitry. Therefore, due to the electrostatic discharge, the internal circuitry can be prevented from being damaged.

Claims

1. An electrostatic discharge protection circuit comprising:

a first transistor formed on a semiconductor substrate adjacent to one side of an insulation oxide film region, for transferring a voltage from a first voltage terminal to an output terminal in response to a first input signal;

a second transistor formed on said semiconductor substrate adjacent to the other side of said insulation oxide film region, for transferring a voltage from a second voltage terminal to said output terminal in response to a second input signal; and

an NPN transistor having its collector connected to said first voltage terminal, its emitter connected to said output terminal and its base connected to a bulk region of said second transistor.

2. An electrostatic discharge protection circuit as set forth in claim 1, wherein said voltage terminal is a supply voltage terminal, said second voltage terminal is a ground voltage terminal, said first and second transistors are MOS transistors and said NPN transistor is formed between said insulation oxide film region and said second transistor.

3. An electrostatic discharge protection circuit as set forth in claim 2, wherein said first and second transistors are NMOS transistors, said first transistor having its drawing connected to said first voltage terminal and its gate for receiving the first input signal, said second transistor having its source connected to said second voltage terminal, its gate for receiving the second input signal and its drain commonly used as said emitter of said NPN transistor.

4. An electrostatic discharge protection as set forth in claim 1, wherein said first voltage terminal is a supply voltage terminal, said second voltage terminal is a ground voltage terminal, said first and second transistors are MOS transistors and said NPN transistor is formed between said insulation oxide film region and said first transistor.

5. An electrostatic discharge protection circuit as set forth in claim 4, wherein said first and second transistors are NMOS transistors, said first transistor having its drain connected to said first voltage terminal, its gate for receiving the first input signal and its source commonly used as said emitter of said NPN transistor, said second transistor having its source connected to said second voltage terminal and its gate for receiving the second input signal.

6. An electrostatic discharge protection circuit as set forth in claim 5, wherein said semiconductor substrate is a P type substrate and said base of said NPN transistor is a portion of a bulk region of said semiconductor substrate.

7. An electrostatic discharge protection circuit comprising:

a first transistor formed on a semiconductor substrate adjacent to one side of an insulation oxide film region, for transferring a voltage from a first voltage terminal to an output terminal in response to a first input signal;

a second transistor formed on said semiconductor substrate adjacent to the other side of said insulation oxide film region, for transferring a voltage from a second voltage terminal to said output terminal in response to a second input signal; and

an NPN transistor having its emitter connected to said second voltage terminal, its collector connected to said output terminal and its base connected to a bulk region of said second transistor.

8. An electrostatic discharge protection circuit as set forth in claim 7, wherein said first voltage terminal is a supply voltage terminal, said second voltage terminal is a ground voltage terminal, said first and second transistors are MOS transistors and said NPN transistor is formed between said insulation oxide film region and said second transistor.

9. An electrostatic discharge protection circuit as set forth in claim 8, wherein said first and second transistors are NMOS transistors, said first transistor having its drain connected to said first voltage terminal and its gate for receiving the first input signal, said second transistor having its source connected to said second voltage terminal, its gate for receiving the second input signal and its drain commonly used as said collector of said NPN transistor.

10. An electrostatic discharge protection circuit as set forth in claim 7, wherein said first voltage terminal is a supply voltage terminal, said second voltage terminal is a ground voltage terminal, said first and second transistors are MOS transistors and said NPN transistor is formed between said insulation oxide film region and said first transistor.

11. An electrostatic discharge protection circuit as set forth in claim 10, wherein said first and second transistors are NMOS transistors, said first transistor having its drain connected to said first voltage terminal, its gate for receiving the first input signal and its source commonly used as said collector of said NPN transistor, said second transistor having its source connected to said second voltage terminal and its gate for receiving the second input signal.

12. An electrostatic discharge protection circuit as set forth in claim 11 or, wherein said semiconductor substrate is a P type substrate and said base of said NPN transistor is a portion of a bulk region of said semiconductor substrate.

13. An electrostatic discharge protection circuit comprising:

a first transistor formed on a semiconductor substrate adjacent to one side of an insulation oxide film region, for transferring a voltage from a first voltage terminal to an output terminal in response to a first input signal;

a second transistor formed on said semiconductor substrate adjacent to the other side of said insulation oxide film region, for transferring a voltage from as second voltage terminal to said output terminal in response to a second input signal; and

an NPN transistor having its collector connected to said first voltage terminal, its emitter connected to said second voltage terminal and its base connected to a bulk region of said second transistor.

14. An electrostatic discharge protection circuit as set forth in claim 13, wherein said first voltage terminal is a supply voltage terminal, said second voltage terminal is a ground voltage terminal, said first and second transistors are MOS transistors and said NPN transistor is formed adjacently to said first transistor.

15. An electrostatic discharge protection circuit as set forth in claim 14, wherein said first and second transistors are NMOS transistors, said first transistor having its drain connected to said first voltage terminal and commonly used as said collector of said NPN transistor and its gate for receiving the first input signal, said second transistor having its source connected to said second voltage terminal and its gate for receiving the second input signal.

16. An electrostatic discharge protection circuit as set forth in claim 15, wherein said semiconductor substrate is a P type substrate and said base of said NPN transistor is a portion of a bulk region of said semiconductor substrate.