Magnetic device having multi-layer with insulating and conductive layers
First Claim
1. A multi-state, multi-layer magnetic device having a length and a width comprising:
- a first magnetic layer;
a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer;
a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and
the width of the multi-state, multi-layer magnetic device being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic device to the width of the multi-state, multi-layer magnetic device being in a range of 1 to 5.
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Abstract
A magnetic device (40) having multi-layer (41-45) with insulating layer (45) and conductive layer (42). The conductive layer (42) is positioned between a first magnetic layer (41) and a third magnetic layer (44). The insulating layer (45) is positioned between a second magnetic layer (43) and the third magnetic layer (44), and which forms a tunnel junction between the second and third layers. Magnetic vectors in the first magnetic layer (41) magnetically couple with ones in the second magnetic layer (43) so that the magnetic coupling loop formed around the third magnetic layer (44) allows magnetic vectors in the third magnetic layer (44) to be switchable in a low magnetic field. Consequently, total power consumption of the magnetic device (60) decreases.
113 Citations
20 Claims
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1. A multi-state, multi-layer magnetic device having a length and a width comprising:
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a first magnetic layer; a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer; a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and the width of the multi-state, multi-layer magnetic device being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic device to the width of the multi-state, multi-layer magnetic device being in a range of 1 to 5. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An array of multi-state, multi-layer magnetic memory cells comprising:
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a semiconductor substrate on which the multi-layer magnetic memory is formed; a plurality of multi-layer magnetic memory cells, each cell comprising; a first magnetic layer; a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer; a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and the width of the multi-state, multi-layer magnetic memory cell being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic memory cell to the width of the multi-state, multi-layer magnetic memory cell being in a range of 1 to 5; a plurality of word lines, one each associated with each column of multi-layer magnetic memory cells, the associated word line in each column being placed adjacent each multi-layer magnetic memory cells, for providing a word current by which a magnetic field is generated to switch directions of magnetic vectors in the third magnetic layer; and a plurality of sense lines for providing a sense current in order to sense states in the third magnetic layer. - View Dependent Claims (14, 15, 16, 17)
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18. A multi-state, multi-layer magnetic memory cell comprising:
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first, second, and third magnetic layers; an insulating layer positioned between the first and second magnetic layers; and an electrically conductive layer positioned between the second and third magnetic layers; wherein a ratio of a length of the multi-state, multi-layer magnetic memory cell to a width of the multi-state, multi-layer magnetic memory cell is in a range of 1 to 5. - View Dependent Claims (19, 20)
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Specification