Multi-layer magnetic memory cells with improved switching characteristics
First Claim
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1. A multi-state, multi-layer magnetic memory cell comprising:
- a plurality of layers of magnetic material stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell having a length and a width;
the width of the multi-layer magnetic memory cell being less than a width of magnetic domain walls within the layers of magnetic material wherein magnetic vectors in the layers of magnetic material point substantially along a length of the layers of magnetic material; and
a ratio of the length of the multi-layer magnetic memory cell to the width of the multi-layer magnetic memory cell being in a range of 1.5 to 10.
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Abstract
A plurality of layers of magnetic material are stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell. The width of the cell is less than a width of magnetic domain walls within the magnetic layers so that magnetic vectors in the magnetic layers point along a length of the magnetic layers, and the ratio of the length to the width of the magnetic memory cell is in a range of 1.5 to 10. The magnetic layers are antiferromagnetically coupled when the ratio is less than 4 and ferromagnetically coupled when the ratio is greater than 4.
63 Citations
13 Claims
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1. A multi-state, multi-layer magnetic memory cell comprising:
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a plurality of layers of magnetic material stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell having a length and a width; the width of the multi-layer magnetic memory cell being less than a width of magnetic domain walls within the layers of magnetic material wherein magnetic vectors in the layers of magnetic material point substantially along a length of the layers of magnetic material; and a ratio of the length of the multi-layer magnetic memory cell to the width of the multi-layer magnetic memory cell being in a range of 1.5 to 10. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A multi-state, multi-layer magnetic memory cell comprising:
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a first layer of magnetic material having a first thickness; a layer of non-magnetic material positioned adjacent the first layer of magnetic material; a second layer of magnetic material positioned adjacent the layer of non-magnetic material and having a second thickness greater than the first thickness, the first layer of magnetic material and the second layer of magnetic material being separated by the layer of non-magnetic material and stacked in parallel overlying relationship to form a multi-layer magnetic memory cell having a length and a width; the first and second layers of magnetic material each having a width that is less than a width of magnetic domain walls within the layer of magnetic material wherein magnetic vectors in the layers of magnetic material point substantially along a length of the layers of magnetic material; and a ratio of the length of the multi-layer magnetic memory cell to the width of the multi-layer magnetic memory cell being in a range of 1.5 to 10. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification