Method for epitaxial growth

• US 5,769,942 A
• Filed: 07/24/1995
• Issued: 06/23/1998
• Est. Priority Date: 09/29/1994
• Status: Expired due to Fees

• Current Assignee: Semiconductor Process Laboratory Co., Ltd.
• Original Assignee: Semiconductor Process Laboratory Co., Ltd.
• Inventors: Maeda, Kazuo
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Mee, Brendan
• Application Number:
  US08/506,039
• Time in Patent Office: 1,065 Days
• Field of Search: 117/98, 117/107, 117/89, 117/84
• US Class Current: 117/89
• CPC Class Codes: C30B 25/22 Sandwich processes
• CPC Class Codes: C30B 29/06 Silicon

Abstract

This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

Claims

1. A method for epitaxial growth of a crystal on a first planar surface of a growth substrate, said method comprising:

arranging a solid state source substrate, containing a solid phase reactant, with a second planar surface facing and parallel to said first planar surface to define a gap between said first and second planar surfaces, said first planar surface having an area smaller than the area of said second planar surface;

heating said source substrate to maintain said source substrate at a temperature higher than the temperature of said growth substrate and to thereby establish a predetermined temperature differential between said source substrate and said growth substrate;

introducing a reaction gas into said gap for reaction with said solid phase reactant to form a reaction product which deposits on said growth substrate to form the crystal by epitaxial growth;

moving at least one of said substrates, during deposition of the reaction product on said growth substrate, to adjust said gap and to thereby maintain said predetermined temperature differential; and

moving at least one of said substrates, during deposition of the reaction product on said growth substrate, to provide planar relative movement between said first and second planar surfaces, whereby every point on said second planar surface is brought into confrontation with said first planar surface and said second planar surface is uniformly etched during said reaction.

2. The method according to claim 1 further comprising, prior to said heating step:

separating said source substrate and said growth substrate from each other across a distance wider than said gap; and

heating said growth substrate, while separated from said source substrate by said distance, in an atmosphere of hydrogen.

3. The method according to claim 1, wherein said epitaxial growth is carried out under a reduced pressure.

4. The method according to claim 1, wherein said source substrate is a material selected from the group consisting of silicon, germanium, and a compound semiconductor.

5. The method according to claim 1, wherein said growth substrate is a material selected from the group consisting of silicon, germanium, and a compound semiconductor.

6. The method according to claim 1, wherein said reaction gas is a gas selected from the group consisting of chlorine, bromine, iodine, hydrogen chloride, hydrogen bromide, hydrogen iodide, silicon tetrachloride, trichlorosilane, and dichlorosilane.

7. A method according to claim 1 wherein said solid phase reactant is silicon, wherein said reaction gas contains a halogen and wherein said reaction product is a silicon halide.

8. A method for epitaxial growth of a crystal on a first planar surface of a growth substrate, said method comprising:

arranging a solid state source substrate, containing a solid phase reactant, with a second planar surface facing and parallel to said first planar surface to define a gap between said first and second planar surfaces, said first planar surface having an area smaller than the area of said second planar surface;

independently heating each of said growth substrate and said source substrate to maintain said source substrate at a temperature higher than the temperature of said growth substrate and to thereby establish a predetermined temperature differential between said source substrate and said growth substrate;

introducing a reaction gas into said gap for reaction with said solid phase reactant to form a reaction product which deposits on said growth substrate to form the crystal by epitaxial growth;

moving at least one of said substrates, during deposition of the reaction product on said growth substrate, to adjust said gap and to thereby maintain said predetermined temperature differential; and

moving at least one of said substrates, during deposition of the reaction product on said growth substrate, to provide planar relative movement between said first and second planar surfaces, whereby every point on said second planar surface is brought into confrontation with said first planar surface and said second planar surface is uniformly etched during said reaction.

9. The method according to claim 8, wherein said growth substrate, prior to said deposition of said reaction product, is heated for surface treatment in an atmosphere of hydrogen while the temperature of said source substrate and said growth substrate are kept substantially equal.

10. The method according to claim 8, wherein said epitaxial growth is carried out under a reduced pressure.

11. The method according to claim 8, wherein said source substrate is a material selected from the group consisting of silicon, germanium, and a compound semiconductor.

12. The method according to claim 8, wherein said growth substrate is a material selected from the group consisting of silicon, germanium, and a compound semiconductor.

13. The method according to claim 8, wherein said reaction gas is a gas selected from the group consisting of chlorine, bromine, iodine, hydrogen chloride, hydrogen bromide, hydrogen iodide, silicon tetrachloride, and dichlorosilane.

14. A method according to claim 8 wherein said solid phase reactant is silicon, wherein said reaction gas contains a halogen and wherein said reaction product is a silicon halide.