Method of forming lightly doped drains in metalic oxide semiconductor components
First Claim
1. A method of forming lightly doped drains in MOS components comprising:
- providing a silicon substrate doped with first type ions, a first insulating layer, and a gate;
forming a second insulating layer and a third insulating layer above the silicon substrate;
etching back the third and the second insulating layers so as to completely remove the second insulating layer above the gate while leaving behind L-shaped first spacers and second spacers on sidewalls of the gate;
removing the second spacers, followed by doping second type ions into the silicon substrate to form first lightly doped drains in the silicon substrate surface below the L-shaped first spacers, and second lightly doped drains in the silicon substrate surface elsewhere;
forming a fourth insulating layer above the silicon substrate, followed by etching back the fourth insulating layer so as to form third spacers; and
using the third spacers, the first insulating layer, and the gate as masks when doping second type ions into the silicon substrate so as to form source/drain regions in silicon substrate surfaces not covered by the third spacers.
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Abstract
The present invention relates to a method of forming lightly doped drains in metallic oxide semiconductor (MOS) components. The method includes forming a first, second, and third insulating layer above a silicon substrate having a gate, etching back the layers to leave behind L-shaped first spacers on sidewalls of the gate, followed by doping second type ions into the silicon substrate to form first lightly doped drains in the silicon substrate surface below the L-shaped first spacers, and second lightly doped drains in the silicon substrate surface elsewhere, further forming a fourth insulating to form third spacers, and using the using the third spacers, the first insulating layer, and the gate as masks when doping second type ions into the silicon substrate so as to form source/drain regions in silicon substrate surfaces not covered by the third spacers. Such a method produces greater yield and reduces leakage current from the transistor components.
43 Citations
18 Claims
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1. A method of forming lightly doped drains in MOS components comprising:
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providing a silicon substrate doped with first type ions, a first insulating layer, and a gate; forming a second insulating layer and a third insulating layer above the silicon substrate; etching back the third and the second insulating layers so as to completely remove the second insulating layer above the gate while leaving behind L-shaped first spacers and second spacers on sidewalls of the gate; removing the second spacers, followed by doping second type ions into the silicon substrate to form first lightly doped drains in the silicon substrate surface below the L-shaped first spacers, and second lightly doped drains in the silicon substrate surface elsewhere; forming a fourth insulating layer above the silicon substrate, followed by etching back the fourth insulating layer so as to form third spacers; and using the third spacers, the first insulating layer, and the gate as masks when doping second type ions into the silicon substrate so as to form source/drain regions in silicon substrate surfaces not covered by the third spacers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification