×

Semiconductor trench capacitor cell having a buried strap

  • US 5,770,876 A
  • Filed: 11/13/1996
  • Issued: 06/23/1998
  • Est. Priority Date: 04/13/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor structure comprising:

  • a semiconductor substrate;

    a trench capacitor, said trench capacitor having an insulating layer and a conductive material situated therein;

    a buried strap recessed below a surface of said semiconductor substrate, said buried strap comprising a contiguous layer of conductive material extending into a section of said semiconductor substrate adjacent said trench capacitor and into a section of said trench capacitor;

    an upper insulation layer positioned above said buried strap; and

    a lower insulation layer positioned beneath and adjacent said buried strap, wherein said upper insulation layer and said lower insulation layer together form a planar surface and wherein a single edge of said buried strap is in electrical contact with said semiconductor substrate and with the conductive material of said trench capacitor.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×