SOI FET design to reduce transient bipolar current

• US 5,770,881 A
• Filed: 09/12/1996
• Issued: 06/23/1998
• Est. Priority Date: 09/12/1996
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wagner, Lawrence Federick Jr., Pelella, Mario M. A., Assaderaghi, Fariborz
• Primary Examiner(s): Crane, Sara W.
• Application Number:
  US08/712,538
• Time in Patent Office: 649 Days
• Field of Search: 257/347, 257/348, 257/349, 257/351, 257/352, 257/353, 257/354
• US Class Current: 257/347
• CPC Class Codes: H01L 29/7841 with floating body, e.g. programmable transistors
• CPC Class Codes: H01L 29/78612 for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458

Abstract

Producing a gap between a source and/or drain region of a silicon-on-insulator (SOI) field effect transistor which is less than the thickness of a depletion region normally surrounding the source and/or drain region, preferably at zero volts bias, permits gain of a parasitic bipolar transistor formed therewith to be transiently reduced and the effective base-emitter junction capacitance to be transiently increased during only modes of operation in which the parasitic bipolar conduction dominates normal operation of the field effect transistor. Such transient reduction of gain coupled with a transient reduction of high frequency response reduces the parasitic bipolar current spike to a degree greater than previously achievable and is fully compatible with other techniques of reducing such current spike. As applied to an SOICMOS SRAM, the transistor structure including such a gap is effective in suppressing half-select write disturb effects while maintaining the benefits of excess charge storage and floating body effects in the transistor.

Claims

1. A silicon-on-insulator field effect transistor having respective source and drain regions formed in a silicon layer over an insulator layer, said transistor including

a gap between one of said source and drain regions and said insulator layer, said gap being of a width equal to or less than a thickness of a depletion region at approximately zero volts bias between said one of said source and drain regions and said silicon layer.

2. A transistor as recited in claim 1, wherein said gap is of a width equal to a thickness of a depletion region at zero volts bias between said one of said source and drain regions and said silicon layer.

3. A transistor as recited in claim 1, having a channel dopant concentration of approximately 3×

10¹⁸ /cm³.

4. A transistor as recited in claim 1, having a channel dopant concentration of approximately 6×

10¹⁷ /cm³.

5. A transistor as recited in claim 2, having a channel dopant concentration of approximately 3×

10¹⁸ /cm³.

6. A transistor as recited in claim 2, having a channel dopant concentration of approximately 6×

10¹⁷ /cm³.

7. A digital logic circuit including a silicon-on-insulator field effect transistor, said transistor having respective source and drain regions formed in a silicon layer over an insulator layer, said transistor including

a gap between one of said source and drain regions and said insulator layer, said gap being of a width equal to or less than a thickness of a depletion region at approximately zero volts bias between said one of said source and drain regions and said silicon layer.

8. A transistor as recited in claim 7, wherein said gap is of a width equal to a thickness of a depletion region at zero volts bias between said one of said source and drain regions and said silicon layer.

9. A transistor as recited in claim 7, having a channel dopant concentration of approximately 3×

10¹⁸ /cm³.

10. A transistor as recited in claim 7, having a channel dopant concentration of approximately 6×

10¹⁷ /cm³.

11. A transistor as recited in claim 8, having a channel dopant concentration of approximately 3×

10¹⁸ /cm³.

12. A transistor as recited in claim 8, having a channel dopant concentration of approximately 6×

10¹⁷ /cm³.

13. A digital logic circuit as recited in claim 7, wherein said digital logic circuit includes a memory cell and said transistor is a transfer gate transistor connected to said memory cell.

14. A digital logic circuit as recited in claim 13, wherein said memory cell is a bistable circuit.

15. A method of operating a silicon-on-insulator field effect transistor including the steps of causing a depletion region to fill a gap between one of

a source region and a drain region of said silicon-on-insulator field effect transistor and an insulator layer below said field effect transistor, and

transiently reducing thickness of said depletion region to a thickness less than said gap.

16. A method as recited in claim 15, including the further step of

applying a voltage to a silicon layer in which said silicon-on-insulator field effect transistor is formed.

17. A method as recited in claim 15, including the further steps of

applying a high logic level voltage to both a source and a drain of said field effect transistor, and

subsequently applying a low logic level voltage to one of said source and a drain of said field effect transistor.

18. A method as recited in claim 17, including the further step of

limiting a parasitic bipolar current in said field effect transistor with an impedance in a discharge circuit connected to said field effect transistor.

19. A method as recited in claim 15, including the further step of

limiting gain of a parasitic bipolar transistor formed with said field effect transistor by channel dopant concentration.

20. A method as recited in claim 15, wherein said step of transiently reducing thickness of said depletion region includes the further step of

transiently reducing high frequency response of said field effect transistor.

21. A method as recited in claim 15, wherein said step of transiently reducing thickness of said depletion region includes the further step of

transiently reducing gain of a parasitic bipolar transistor formed with said field effect transistor.