Gan single crystal

• US 5,770,887 A
• Filed: 10/11/1994
• Issued: 06/23/1998
• Est. Priority Date: 10/08/1993
• Status: Expired due to Term

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Cable Industries Limited (Mitsubishi Materials Corporation)
• Inventors: Watabe, Shinichi, Okagawa, Hiroaki, Hiramatsu, Kazumasa, Tadatomo, Kazuyuki
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Williams, Alexander Oscar
• Application Number:
  US08/320,263
• Time in Patent Office: 1,351 Days
• Field of Search: 257/613, 257/78, 257/77, 257/103, 257/94, 257/12, 257/76, 257/614
• US Class Current: 257/613
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 μm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

Claims

1. A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 μ

m.

2. The GaN single crystal of claim 1, which is produced by the steps of:

(A) growing on a substrate, a material having a good lattice constant match with a GaN single crystal, wherein said substrate has a first GaN single crystal at least on its surface, and wherein the material comprises an oxide selected from the group consisting of BeO, MgO, ZnO, SrO, CdO, BaO and HgO to form a buffer layer,

(B) growing a GaN single crystal on the buffer layer of (A) to give a second GaN single crystal, and

(C) chemically removing the buffer layer to separate the second GaN single crystal.

6. The GaN single crystal of claim 1, which is produced by the steps of:

(A) growing on a substrate, a material having a good lattice constant match with a GaN single crystal, wherein said substrate has a first GaN single crystal at least on its surface to form a buffer layer,

(B) growing GaN crystal on the buffer layer of (A) to give a second GaN single crystal, the above steps (A) and (B) being a single cycle of crystal growth,

(C) repeating said single cycle of crystal growth at least once on the GaN single crystal obtained in step (B), and,

(D) removing the buffer layer by chemically separating the GaN single crystals.

3. A semiconductor light emitting element comprising:

(A) a substrate comprising a GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec wherein the thickness of the substrate is at least 80 μ

m,

(B) plural GaN group compound semiconductor layers comprising a light emitting part wherein said layers are laminated on the substrate of (A) to give a laminate having two outermost layers, and

(C) an electrode set on each of the two outermost layers of the laminate.

4. The semiconductor light emitting element of claim 3, wherein the GaN single crystal is obtained by growing a material showing good lattice match with GaN single crystal, on a substrate having GaN single crystal at least on its surface, to give a buffer layer, growing GaN crystal thereon to give a GaN single crystal, the above steps being one cycle of crystal growth, and repeating said cycle of crystal growth at least once on the GaN single crystal obtained by the first cycle of crystal growth.

5. The semiconductor light emitting element of claim 3, wherein the light emitting part has a p-n junction selected from the group consisting of a homo-junction, a single-hetero junction, a double-hetero junction, a single quantum well structure and a multiple quantum well structure.

7. A semiconductor light emitting element of claim 3 which is produced by the steps of:

(A) growing on a GaN single crystal substrate, a material having a good lattice constant match with a GaN single crystal, wherein said substrate has a first GaN single crystal at least on its surface, to form a buffer layer,

(B) growing a GaN single crystal on the buffer layer of (A) to give a second GaN single crystal, and

(C) chemically removing the buffer layer to separate the second GaN single crystal.

8. A semiconductor light emitting element of claim 3, which is produced by:

(A) growing on a GaN single crystal substrate, a material having a good lattice constant match with a GaN single crystal, wherein said substrate has a first GaN single crystal at least on its surface to form a buffer layer,

(B) growing GaN crystal on the buffer layer of (A) to give a second GaN single crystal, the above steps (A) and (B) being a single cycle of crystal growth,

(C) repeating said single cycle of crystal growth at least once on the GaN single crystal obtained in step (B), and,

(D) removing the buffer layer by chemically separating the GaN single crystals.