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Thin film transistor device, display device and method of fabricating the same

  • US 5,771,110 A
  • Filed: 07/02/1996
  • Issued: 06/23/1998
  • Est. Priority Date: 07/03/1995
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device being formed by integrating a plurality of semiconductor elements and a substrate, said semiconductor device comprising:

  • each said semiconductor element has a heat absorption film provided between said substrate and said semiconductor elements, and an area or film thickness of said heat absorption film is relatively reduced in a portion where a relatively large number of said semiconductor elements are provided, while an area or film thickness of said heat absorption film is relatively increased in a portion where a relatively small number of said semiconductor elements are provided, in accordance with a distributed state of said semiconductor elements on said substrate.

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