Resonant microbeam temperature sensor

• US 5,772,322 A
• Filed: 05/31/1996
• Issued: 06/30/1998
• Est. Priority Date: 05/31/1996
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Burns, David W., Stratton, Thomas G.
• Primary Examiner(s): Gutierrez, Diego F.F.
• Application Number:
  US08/656,501
• Time in Patent Office: 760 Days
• Field of Search: 374/118, 73/579
• US Class Current: 374/118
• CPC Class Codes: G01K 11/26 of resonant frequencies
• CPC Class Codes: G01K 5/62 the solid body being formed of compounded strips or plates, e.g. bimetallic strip
• CPC Class Codes: G01K 7/32 using change of resonant frequency of a crystal

Abstract

A temperature sensing device employs a resonant polysilicon beam, in combination with electrical circuitry for oscillating the beam at its natural resonant frequency, to sense changes in temperature. The resonant beam is formed as part of a silicon layer, and the silicon layer is in direct contact with a dissimilar material. In one version of the device, the silicon layer is deposited onto a sapphire substrate by low pressure chemical vapor deposition. In another version, the beam is part of a polysilicon layer deposited onto a silicon wafer substrate. The silicon substrate is thinned, then thermoelectrically bonded to a borosilicate glass substrate. In still another version, the silicon substrate is selectively thinned and has deposited thereon a TCE mismatched material. In all versions, temperature is sensed based on a thermal mismatch of the two dissimilar materials. The respective layers expand (and contract) at different rates in response to temperature changes, altering the level of induced axial strain in the resonant beam. The change in induced strain alters the frequency at which the beam oscillates, thereby providing a direct indication of temperature.

Claims

1. A strain-responsive temperature sensing device, comprising:

a support structure including a substrate of a first material having a first thermal expansion coefficient and a layer of a second material having a second thermal expansion coefficient different than the first thermal expansion coefficient, the layer of a second material being in intimate contact with the substrate so as to induce strain in said support structure with changes in temperature;

a vibratory element having opposite first and second end portions, and a means for fixing the first end portion and the second end portion to the support structure, to maintain the vibratory element for oscillation at a natural resonant frequency that varies with changes in induced strain in the vibratory element; and

a resonant frequency sensing means for detecting the natural resonant frequency of said vibratory element and for generating an output representing temperature in the region of the vibratory element, based on the natural resonant frequency.

2. The device of claim 1 wherein:

said vibratory element is an elongate beam formed of a semiconductor material.

3. The device of claim 2 wherein:

said semiconductor material is a polycrystalline silicon.

4. The device of claim 3 wherein:

the semiconductor material of which said vibratory element is formed has a thickness in the range of from about 0.5 to about 5.0 micrometers, and said support structure has a thickness at least ten times the thickness of the semiconductor material of which said vibratory element is formed.

5. The device of claim 3 wherein:

the substrate of said support structure comprises a borosilicate glass substrate; and

the layer of a second material of said support structure comprises single crystal silicon layer bonded to the borosilicate glass substrate.

6. The device of claim 3 wherein:

the substrate of said support structure comprises a locally thinned silicon substrate; and

the layer of a second material of said support structure comprises a thin film of the second material deposited on said locally thinned silicon substrate.

7. The device of claim 6 wherein said support structure includes a U-shaped feature etched through the locally thinned silicon substrate, with said vibratory element located within the boundary of the U-shaped feature.

8. The device of claim 6 wherein the second material is selected from a group consisting of oxides, nitrides and suicides.

9. The device of claim 1 wherein:

the substrate of said support structure is an insulating substrate.

10. The device of claim 9 wherein:

the substrate is formed of aluminum oxide.

11. The device of claim 9 wherein:

the layer of a second material of said support structure is a semiconductor layer applied to the insulating substrate, and said vibratory element is an elongate beam formed of the same material as the semiconductor layer.

12. The device of claim 11 wherein:

said insulating substrate consists essentially of sapphire, and said semiconductor layer consists essentially of a polycrystalline silicon.

13. The device of claim 9 wherein:

said insulating substrate is formed of a borosilicate glass.

14. The device of claim 13 wherein:

the layer of a second material of said support structure comprises a silicon base layer bonded to the borosilicate glass substrate.

15. The device of claim 14 wherein:

said support structure further comprises a dielectric layer applied to the silicon base layer.

16. The device of claim 15 wherein:

the silicon base layer consists essentially of single crystal silicon, and the support dielectric layer consists essentially of a polycrystalline silicon.

17. The device of claim 1 wherein:

the difference between the first and second thermal expansion coefficients is within the range of from about 0.5 to about 20.0×

10^-6 /degree C.

18. The device of claim 1 wherein:

the substrate of said support structure has a modulus of elasticity equal or greater than that of the layer of a second material of said support structure.

19. The device of claim 9 further including:

a semiconductor package, and an adhesive means mounting said insulating substrate to said semiconductor package.

20. The device of claim 19 wherein:

said insulating substrate is mounted to said semiconductor package in cantilever fashion.

21. The device of claim 19 wherein said frequency sensing means comprises:

a position sensing means for sensing the position of said vibratory element relative to said support structure, and generating a position signal indicating the position of said vibratory element as it oscillates; and

an oscillating means for driving said vibratory element in a periodic mechanical oscillation relative to said support structure, said oscillating means receiving the position signal and controllably adjusting the frequency of the periodic mechanical oscillation toward coincidence with the natural resonant frequency of said vibratory element.

22. The device of claim 21 wherein said oscillating means comprises:

a drive electrode formed on said vibratory element;

means for generating a substantially uniform electrical field in the region of said vibratory element;

means for generating a periodically varying drive voltage; and

means for applying the drive voltage to said drive electrode.

23. The device of claim 22 wherein:

said means for generating a periodically varying drive voltage is mounted on said semiconductor package.