Film comprising silicon dioxide as the main component and method for its productiion
First Claim
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1. A target for sputtering comprising Si, as the main component, and Zr, wherein the amount of zirconium is at least 4 atoms relative to 96 atoms of Si.
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Abstract
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
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1 Claim
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1. A target for sputtering comprising Si, as the main component, and Zr, wherein the amount of zirconium is at least 4 atoms relative to 96 atoms of Si.
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