Integrated circuit device and process for its manufacture

• US 5,773,197 A
• Filed: 10/28/1996
• Issued: 06/30/1998
• Est. Priority Date: 10/28/1996
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Miller, Robert Dennis, Hedrick, James Lupton, Carter, Kenneth Raymond
• Primary Examiner(s): Baxter, Janet C.
• Assistant Examiner(s): ASHTON, ROSEMARY E
• Application Number:
  US08/739,134
• Time in Patent Office: 610 Days
• Field of Search: 430/313, 430/317, 430/318, 430/320, 430/330, 430/272.1
• US Class Current: 430/313
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing

Abstract

The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and uncondensed precursor polymer preferably terminated with an alkoxysilyl alkyl group.

Claims

1. A process for forming an integrated circuit comprising:

(a) positioning on a substrate a layer of dielectric composition, the composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is;

terminated with (RO)_m (R")_n SiR'"'"'-- where R and R'"'"' are independently a hydrocarbyl group;

R" is hydrido or hydrocarbyl group;

m is 1, 2 or 3 and n+m=3;

(b) heating the composition to react the reactants;

(c) lithographically patterning the dielectric layer;

(d) depositing a metallic film onto the patterned dielectric layer; and

(e) planarizing the film to form the integrated circuit.

2. The process of claim 1 wherein the organic polysilica is C_1-6 alkoxysilane, silsesquioxane or mixtures thereof.

3. The process of claim 1 wherein the precursor polymer is terminated with tri C_1-10 alkoxysilyl C_1-10 alkyl group or a tri C_1-10 alkoxysilyl aryl group.

4. A process for forming an integrated circuit comprising:

(a) depositing a metallic film on a substrate;

(b) lithographically patterning the metallic film;

(c) depositing on the patterned metallic film, a layer of a dielectric composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is;

terminated with (RO)_m (R")_n SiR'"'"'-- where R and R'"'"' are independently a hydrocarbyl group;

R" is hydrido or hydrocarbyl group;

m is 1, 2 or 3 and n+m=3;

(d) heating the composition to react the reactants.

5. The process of claim 4 wherein the organic polysilica is C_1-6 alkoxysilane, silsesquioxane or mixtures thereof.

6. The process of claim 4 wherein the precursor polymer is end capped with a tri C_1-10 alkoxysilyl C_1-10 alkyl group or a tri C₁₀ alkoxysilylaryl group.