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Semiconductor device having a recessed channel structure and method for fabricating the same

  • US 5,773,343 A
  • Filed: 08/08/1995
  • Issued: 06/30/1998
  • Est. Priority Date: 05/12/1995
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device having a recessed structure comprising the steps of:

  • forming a second conductivity type semiconductor layer on a first conductivity type substrate wherein the second conductivity type semiconductor layer is formed by depositing a polysilicon film on the first conductivity type substrate;

    forming a first insulation film on the second conductivity type semiconductor layer;

    forming a source and a drain by removing portions of the first insulation film and the second conductivity type semiconductor layer;

    forming a second insulation film on an exposed surface of the substrate and the source and drain;

    forming a first gate on the second insulation film;

    forming a dielectric film on a surface of the first gate; and

    forming a second gate on the dielectric film,wherein the first gate fills at least the removed portion of the second conductivity type semiconductor layer.

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