Method for probing a semiconductor wafer using a motor controlled scrub process
First Claim
1. A method for probing a semiconductor wafer comprising the steps of:
- providing a semiconductor die having a surface and a plurality of pads;
providing a prober having a probe chuck;
providing a probe card having a plurality of probes;
placing the semiconductor die on the probe chuck;
moving the probe chuck in a vertical direction toward the probe card until physical contact is made between the plurality of probes and the plurality of pads; and
scrubbing the plurality of pads with the plurality of probes, wherein the step of scrubbing comprises;
while the plurality of probes is in physical contact with the plurality of pads, moving the probe chuck in a vertical direction by an amount less than 10 μ
m;
while the plurality of probes is in physical contact with the plurality of pads, rotating the probe chuck in a horizontal plane by motor control while maintaining the probe card stationary, without moving the probe chuck away from the probe card; and
if the plurality of probes is not in electrical contact with the plurality of pads, then repeating the step of moving the probe chuck in a vertical direction and the step of rotating the probe chuck in a horizontal plane until the plurality of probes is in electrical contact with the plurality of pads.
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Accused Products
Abstract
A process for probing a semiconductor wafer involves bringing the bond pads (63) of a semiconductor die (114) into contact with probes (122) of a probe card (120) by moving a probe chuck (110) in the Z-direction. Initial contact is made with "zero-overdrive." The probe chuck is then moved in a small amount in the Z-direction to induce a pressure in the probe. Scrubbing of the probes against the pads is then performed by moving the probe chuck in the X and Y directions. During movement in the X and Y directions, the pressured induced in the probe is released, causing the probe to begin to break through an oxide layer (62) of the bond pad. If the oxide layer is not completely broken, the movement of the probe chuck in the Z and then X & Y directions is repeated until electrical contact between the probes and the bond pads is made.
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Citations
22 Claims
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1. A method for probing a semiconductor wafer comprising the steps of:
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providing a semiconductor die having a surface and a plurality of pads; providing a prober having a probe chuck; providing a probe card having a plurality of probes; placing the semiconductor die on the probe chuck; moving the probe chuck in a vertical direction toward the probe card until physical contact is made between the plurality of probes and the plurality of pads; and scrubbing the plurality of pads with the plurality of probes, wherein the step of scrubbing comprises; while the plurality of probes is in physical contact with the plurality of pads, moving the probe chuck in a vertical direction by an amount less than 10 μ
m;while the plurality of probes is in physical contact with the plurality of pads, rotating the probe chuck in a horizontal plane by motor control while maintaining the probe card stationary, without moving the probe chuck away from the probe card; and if the plurality of probes is not in electrical contact with the plurality of pads, then repeating the step of moving the probe chuck in a vertical direction and the step of rotating the probe chuck in a horizontal plane until the plurality of probes is in electrical contact with the plurality of pads. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for probing a semiconductor wafer comprising the steps of:
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(a) providing a semiconductor wafer having a top surface, the semiconductor wafer having a plurality of bond pads located on the top surface of the semiconductor wafer, the plurality of bond pads comprising a conductive material and an overlying dielectric layer; (b) placing the semiconductor wafer onto a probe chuck within a prober assembly, the prober assembly comprising a probe board having a plurality of probe needles, wherein the step of placing the semiconductor wafer onto the probe chuck defines an x-axis parallel to the top surface of the semiconductor wafer, a y-axis parallel to the top surface of the semiconductor wafer and perpendicular to the x-axis, and a z-axis perpendicular to both the x-axis and the y-axis; (c) moving the probe chuck in a direction of the z-axis to physically contact the plurality of probe needles to the overlying dielectric layer; and (d) using motor control to move the probe chuck with respect to the probe board in a direction of the x-axis to scrub a portion of the overlying dielectric layer from the plurality of bond pads while maintaining the probe card stationary, without moving the probe chuck away from the probe board. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for probing a semiconductor wafer comprising the steps of:
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placing a semiconductor wafer having a top surface onto a probe chuck; bringing the semiconductor wafer into contact with a plurality of probe needles, each probe needle in the plurality of probe needles having a tip diameter of less than 20 μ
m and extending from a probe card;moving the semiconductor wafer horizontally while the plurality of probe needles is in contact with the semiconductor wafer by motor control while maintaining the probe card stationary, without moving the semiconductor wafer vertically away from the plurality of probe needles; and testing at least one integrated circuit on the semiconductor wafer by transmitting electrical signals through the plurality of probe needles to the at least one integrated circuit. - View Dependent Claims (21, 22)
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Specification