Antifuse circuit using standard MOSFET devices
First Claim
1. An integrated circuit having an antifuse circuit for enabling a discretionary circuit, comprising:
- a) a first node having a programmable high voltage applied thereto;
b) a PFET having;
a gate,a source coupled to the first node, anda drain coupled to a second node and the discretionary circuit;
c) a programmable circuit, coupled to the gate of the PFET, for pulling the PFET gate voltage high and low; and
d) an NFET having a drain electrode coupled to the second node, the NFET gate having a channel region with a predetermined width and length that is shorted upon application of the programmable high voltage.
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Abstract
A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.
58 Citations
11 Claims
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1. An integrated circuit having an antifuse circuit for enabling a discretionary circuit, comprising:
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a) a first node having a programmable high voltage applied thereto; b) a PFET having; a gate, a source coupled to the first node, and a drain coupled to a second node and the discretionary circuit; c) a programmable circuit, coupled to the gate of the PFET, for pulling the PFET gate voltage high and low; and d) an NFET having a drain electrode coupled to the second node, the NFET gate having a channel region with a predetermined width and length that is shorted upon application of the programmable high voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification