×

Heat treatment process for preventing slips in semiconductor wafers

  • US 5,775,889 A
  • Filed: 10/27/1995
  • Issued: 07/07/1998
  • Est. Priority Date: 05/17/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A process for heat treating a plurality of semiconductor wafers in a substantially tubular reaction vessel located in a tubular furnace, each of said semiconductor wafers having a diameter of about 300 mm, said process comprising the steps of:

  • mounting said semiconductor wafers in parallel one above another in a mounting jig at a vertical mounting pitch of 18-20 mm;

    loading said mounting jig having said semiconductor wafers mounted therein into said reaction vessel;

    heating said semiconductor wafers to a temperature above 600°

    C. and below 950°

    C. at a rate in which the temperature increases by up to 10°

    C./minute, a temperature above 950°

    C. and below 1000°

    C. at a rate in which the temperature increases by up to 40°

    C./minute, a temperature above 1000°

    C. and below 1025°

    C. in which the temperature increases by up to 3°

    C./minute, and a temperature above 1025°

    C. and below 1050°

    C. at a rate in which the temperature increases by up to 2°

    C./minute, and cooling said semiconductor wafers from a temperature of 1050°

    C. to 600°

    C. at a rate in which the temperature decreases by up to 3°

    C./minute.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×