Glazing pane equipped with at least one thin film and method of manufacturing the same

• US 5,776,603 A
• Filed: 11/21/1995
• Issued: 07/07/1998
• Est. Priority Date: 11/21/1994
• Status: Expired due to Term

• Current Assignee: Saint-Gobain Vitrage
• Original Assignee: Saint-Gobain Vitrage
• Inventors: Corinne, Victor, Zagdoun, Georges
• Primary Examiner(s): Turner, Archene
• Application Number:
  US08/561,387
• Time in Patent Office: 959 Days
• Field of Search: 428/216, 428/212, 428/336, 428/697, 428/699, 428/704, 428/698, 428/428, 428/432, 427/164, 427/165, 427/166, 427/167, 427/255.2, 427/225.3, 427/255.7, 65/60.5, 65/60.8, 359/580, 359/586, 359/589
• US Class Current: 428/336
• CPC Class Codes: C03C 17/23 Oxides C03C17/02 takes precedence
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3441 comprising carbon, a carbide or oxycarbide
• CPC Class Codes: C03C 2217/213 SiO2
• CPC Class Codes: C03C 2217/23 Mixtures
• CPC Class Codes: C03C 2217/285 Fluorides
• CPC Class Codes: C03C 2218/15 from the vapour phase
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

This invention is a product comprising a transparent substrate of the glass substrate type (1), coated with at least one thin film (4) based upon an oxide comprising silicon, aluminum and at least one third element M facilitating the formation of a homogeneous mixed oxide structure of silicon and aluminum. The invention also concerns a method of manufacturing coated glass, especially by a gas phase pyrolysis technique, and its applications.

Claims

1. A product comprising

(a) a transparent substrate, and

(b) a homogeneous thin film, on said substrate;

wherein said homogeneous thin film is formed by pyrolysis and comprises a mixed oxide of silicon and aluminum, and an additive amount of an element M, which is a halogen.

2. The product of claim 1, wherein M is a fluorine.

3. The product of claim 1, wherein said homogeneous thin film further comprises element M'"'"'.

4. The product of claim 1, wherein said homogeneous thin film further comprises carbon.

5. The product of claim 3, wherein said homogeneous thin film has a chemical formulation SiAl_x O_y M_z M'"'"'_u.

6. The product of claim 1, wherein said homogeneous thin film has a chemical formulation SiAl_x O_y M_z M'"'"'_u, where M is fluorine, M'"'"' is carbon, x is 0.06 to 0.74, y is 2.1 to 3.1, z is 0.02 to 0.15 and u is 0 to 0.15.

7. The product of claim 1, wherein said homogeneous thin film has a chemical formulation SiAl_x O_y M_z M'"'"'_u, where M is fluorine, M'"'"' is carbon, x is 0.14 to 0.33, y is 2.3 to 2.5, z is 0.04 to 0.08 and u is 0.03 to 0.04.

8. The product of claim 1, wherein said homogeneous thin film has a geometric thickness of 30 to 180 nm.

9. The product of claim 1, wherein said homogeneous thin film has a geometric thickness of 60 to 160 nm.

10. The product of claim 1, wherein said homogeneous thin film has a geometric thickness of 80 to 140 nm.

11. The product of claim 1, wherein said homogeneous thin film has a refractive index of 1.42 to 1.60.

12. The product of claim 1, wherein said homogeneous thin film has a refractive index of 1.44 and 1.46.

13. The product of claim 1, wherein said product further comprises:

(c) a functional film.

14. The product of claim 13, wherein said functional film is selected from the group consisting of an electrically conductive film, a low-emissivity film, a selective film, an antisolar film and an antireflective film.

15. The product of claim 13, wherein said functional film comprises a doped metallic oxide, metallic nitride, or metallic oxynitride.

16. The product of claim 13, wherein said functional film comprises a material selected from the group consisting of tin oxide doped with fluorine, indium oxide doped with tin, zinc oxide doped with indium, zinc oxide doped with fluorine, zinc oxide doped with aluminum, zinc oxide doped tin and titanium nitride.

17. The product of claim 1, wherein said product comprises alternating oxide films of high refractive index and low refractive index, including said homogeneous thin film.

18. The product of claim 1, wherein there is no film on said homogeneous thin film.

19. The product of claim 1, wherein said homogeneous thin film is in contact with said substrate.

20. A method for preparing a product comprising:

pyrolizing in the gas phase at least a first and a second precursor, thereby depositing a homogeneous thin film on a transparent substrate,

wherein said first precursor comprises silicon, said second precursor comprises aluminum, and wherein said first or second precursor further comprises a halogen, and said homogeneous thin film comprises a mixed oxide of silicon and aluminum and an additive amount of an element M, which is a halogen.

21. The method of claim 20, wherein said first precursor is selected from the group consisting of tetraethyl orthosilicate, hexamethyl disilane, hexamethyl disiloxane, octamethyl cyclotetrasiloxane, tetramethyl cyclotetrasiloxane, tetramethyl silane and hexamethyl disilazane.

22. The method of claim 20, wherein said second precursor is an organometallic precursor having an alcoholate group or β

-diketone group.

23. The method of claim 20, wherein said second precursor is selected from the group consisting of aluminum acetylacetonate and methyl 2-heptadiene-4,6-aluminum.

24. The method of claim 20, wherein said second precursor is selected from the group consisting of a hexafluorinated acetylacetonate or a trifluoroacetonate.

25. The method of claim 20, wherein a third precursor is pyrolized during said pyrolizing and said third precursor comprises M.

26. The method of claim 25, wherein said third precursor is CF₄ and M is fluorine.

27. The method of claim 20, wherein a gaseous precursor of oxygen selected from the group consisting of O₂, H₂ O, CO₂, N₂ and O₃, is present during said pyrolizing.

28. The method of claim 20, wherein said homogeneous thin film is deposited at a temperature of 400°

-550°

C.

29. The method of claim 20, wherein said homogeneous thin film is deposited at a temperature of 450°

-550°

C.

30. The method of claim 20, wherein said homogeneous thin film is deposited continuously onto a ribbon of float glass.

31. The method of claim 20, further comprising:

depositing one or more other thin films by pyrolysis, prior to depositing said homogeneous thin film.

32. A pane comprising:

a homogeneous thin film, on a transparent substrate;

wherein said homogeneous thin film is formed by pyrolysis and comprises a mixed oxide of silicon and aluminum, and an additive amount of an element M, which is a halogen.