Ramped foot support

• US 5,777,328 A
• Filed: 07/19/1996
• Issued: 07/07/1998
• Est. Priority Date: 07/21/1995
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gooch, Roland W.
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US08/690,275
• Time in Patent Office: 718 Days
• Field of Search: 250/332, 250/338.4, 437/915, 437/3
• US Class Current: 250/338.4
• CPC Class Codes: H01L 27/1465 of the hybrid type

Abstract

A support arm for a bolometer suspended over a substrate contacts the underlying substrate in the form of a triangular wedge. The support arm may be a dielectric coated silicon with a metal conductor on the support arm and extending to a contact pad on the substrate.

Claims

1. A radiation detector, comprising:

(a) a substrate containing circuitry;

(b) a bolometer suspended over said substate, said bolometer with resistance dependent upon temperature; and

(c) a plurality of arms supporting said bolometer on said substrate, said arms including conductors connecting said bolometer to said circuitry, each of said arms extending from said substrate with the contact of said arm with said substrate forming a concave contact area having a V-shaped indentation.

2. The radiation detector of claim 1, wherein:

(a) each of said arms having a hollow triangular wedge shape at said contact.

3. The radiation detector of claim 2, wherein:

(a) said bolometer is planar and parallel to a surface of said substrate; and

(b) each of said arms extends parallel to an edge of said bolometer and spaced from said bolometer.

4. A micromechanical support structure, comprising:

(a) an arm extending from a planar body with the contact of said arm with said planar body forming a concave contact area having a V-shaped indentation.

5. The support structure of claim 4, wherein;

(a) said arm has a hollow triangular wedge shape at said planar body.

6. A method of fabricating a micromechanical support arm, comprising the steps of:

(a) forming a first layer on a second layer with said second layer on a substrate, said first layer containing an opening with a V-shaped portion of said first layer extending into said opening;

(b) removing portions of said second layer exposed by said opening, said removing simultaneously eroding said V-shaped portion of said first layer thereby expanding said opening and exposing additional portions of said second layer;

(c) removing said first layer;

(d) depositing a third layer on said second layer, said third layer contacting said substrate where said second layer has been completely removed;

(e) removing portions of said third layer to define a support arm; and

(f) removing said second layer to leave a support arm.

7. The method of claim 6, wherein

(a) said first layer is photoresist;

and

(b) said second layer is polyimide.

8. The method of claim 7, wherein:

(a) said removing of step (b) of claim 6 includes reactive ion etching with an oxygen plasma.

9. The method of claim 6, wherein:

(a) said third layer is amorphous silicon.

10. The method of claim 6, wherein:

(a) said opening has the shape of a circle missing a wedge.