Ordered interface texturing for a light emitting device

• US 5,779,924 A
• Filed: 03/22/1996
• Issued: 07/14/1998
• Est. Priority Date: 03/22/1996
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.), Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Krames, Michael R., Kish, Fred A. Jr.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/620,518
• Time in Patent Office: 844 Days
• Field of Search: 216/2, 216/24, 216/41, 156/649.1, 156/654.1, 156/655.1, 156/659.11
• US Class Current: 216/24
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device.

Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.

Claims

1. A light emitting device comprising:

a device that includes,

a substrate,

a p-n junction region having multiple layers, wherein subsets of the multiple layers have opposing polarity such that a p-n junction is formed, one of the layers being adjacent the substrate,

a transparent window layer, positioned adjacent the p-n junction region, and

electrical contacts, connecting to the p-n junction region, being operative to forward bias the p-n junction; and

a primary interface, positioned in the device, that is textured with repeated features in at least one selected direction, having an associated periodicity in each of the selected directions to increase light extraction and, within a period, having a cross-sectional profile having at least one peak and at least one valley.

2. A light emitting device, as defined in claim 1, wherein the primary interface has repeated features in at least two selected directions that have identical periodicities.

3. A light emitting device, as defined in claim 1, wherein the primary interface has repeated features that form a rectangular array.

4. A light emitting device, as defined in claim 1, wherein the primary interface has repeated features that form a hexagonally close-packed pattern.

5. A light emitting device, as defined in claim 1, wherein the maximum peak-to-valley depth is between 0.2 and 15 microns.

6. A light emitting device, as defined in claim 1, wherein the periodicities have associated periods between 0.1 and 5.0 microns.

7. A light emitting device, as defined in claim 1, wherein the valley is within 2 microns of the p-n junction region.

8. A light emitting device, as defined in claim 1, wherein the peaks and valleys of the cross-sectional profile of the primary interface have full-width-at-half-maximum of 10-90% of one period of the textured arrangement.

9. A light emitting device, as defined in claim 1, wherein a portion of the primary interface is electrically conducting.

10. A light emitting device, as defined in claim 1, further comprising a metallic film at a portion of the primary interface.

11. A light emitting device, as defined in claim 1, wherein at least some portion of the valley is filled in by a material having an index of refraction less than 2.0.

12. A light emitting device, as defined in claim 11, wherein:

the material having an index of refraction less than 2.0 is a dielectric material; and

the device further including a layer of metal positioned over the dielectric material.

13. A light emitting device, as defined in claim 1, further comprising:

N secondary interfaces (where N≧

1), positioned in the device, wherein each of the secondary interfaces is textured with repeated features in at least one selected direction, having a periodicity in each selected direction to increase light extraction and, within any period, having a cross-sectional profile having at least one peak and at least one valley.

14. A light emitting device, as defined in claim 13, wherein at least one of the N secondary interfaces and the primary interface have different cross-sectional profiles.

15. A light emitting device, as defined in claim 13, wherein at least one of the N secondary interfaces and the primary interface are textured with different periodicities.

16. A method for manufacturing a textured interface for a light emitting device made by the steps of:

transferring at least one pattern to at least one interface of the device, wherein each pattern has repeating features having a periodicity in all directions and

removing some of the device material according to the pattern to create an interface that is textured with the repeating features having a periodicity in all of the directions, wherein the periodicity for at least two of the directions has an associated period between 0.1 and 5.0 microns.

17. A method, as defined in claim 16, wherein the step of transferring the pattern comprises the steps of:

depositing a layer of photoresist over the interface of the device;

exposing a portion the layer of photoresist to create the pattern; and

removing the unpatterned regions of photoresist to create the masking layer.

18. A method, as defined in claim 16, wherein the transferring the pattern comprises the steps of:

depositing a layer of dielectric material over the interface of the device;

depositing a layer of photoresist over the layer of dielectric material;

exposing a portion of the layer of photoresist to create the pattern;

removing the unpatterned regions of photoresist; and

etching the layer of dielectric material according to the pattern.

21. A method, as defined in claim 16, wherein the step of transferring the pattern comprises the step of modifying the state of the device material according to a pattern, wherein the pattern has repeating features having a periodicity in at least one direction.

22. A method, as defined in claim 21, wherein the step of modifying and the step of removing are performed simultaneously.

19. A method for manufacturing a textured interface for a light emitting device made by the steps of:

transferring at least one pattern to at least one interface of the device, wherein each pattern has repeating features having a periodicity in at least one selected direction;

removing some of the device material according to the pattern to create an interface that is textured with the repeating features having a periodicity in at least one direction; and

filling in the at least some portion of interface using a material having a refractive index less than 3.

20. A method for manufacturing a textured interface for a light emitting device made by the steps of:

transferring at least one pattern to at least one interface of the device, wherein each pattern has repeating features having a periodicity in at least one selected direction;

removing some of the device material according to the pattern to create an interface that is textured with the repeating features having a periodicity in at least one direction; and

applying electrical contacts to the interface.