LED display packaging with substrate removal and method of fabrication

• US 5,780,321 A
• Filed: 08/19/1996
• Issued: 07/14/1998
• Est. Priority Date: 01/18/1996
• Status: Expired due to Fees

• Current Assignee: Ryo Holdings, LLC (Intellectual Ventures LLC)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Lee, Hsing-Chung, Shieh, Chan-Long, Holm, Paige M.
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/699,263
• Time in Patent Office: 694 Days
• Field of Search: 438/25, 438/26, 438/34, 257/81, 257/82, 257/84, 228/180.22
• US Class Current: 438/34
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.

Claims

1. A method of fabricating a light emitting diode display package comprising the steps of:

providing a substrate with a major surface;

forming an array of light emitting diodes on the major surface of the substrate, thereby forming a light emitting diode device having a defined display area; and

selectively removing the substrate from the light emitting diode devices thereby leaving an indium-gallium-aluminum-phosphide epilayer of the light emitting device exposed.

2. A method of fabricating a light emitting diode display package as claimed in claim 1 further including the steps of forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, providing a driver device formed on a silicon substrate, having a plurality of drive components formed therein, forming a plurality of bond pads, in electrical cooperation with the drive components, cooperatively positioned to engage the bond pads of the array of light emitting diodes and interfacing the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads, in electrical cooperation with the drive components of the driver device, thereby electrically connecting the light emitting diode device to the driver device.

3. A method of fabricating a light emitting diode display package as claimed in claim 2 wherein the interfacing of the plurality of bond pads, in electrical cooperation with the-array of light emitting diodes, to the plurality of bond pads in electrical cooperation with the driver device includes flip chip solder bump bonding of the bond pads.

4. A method of fabricating a light emitting diode display package as claimed in claim 3 further including the step of underfilling an area formed between the light emitting diode device and the driver device with one of a nonconductive polymer or an epoxy material.

5. A method of fabricating a light emitting diode display package as claimed in claim 1 wherein the step of removing the substrate from the light emitting diode device includes a release layer, whereby the release layer is selectively etched away.

6. A method of fabricating a light emitting diode display package comprising the steps of:

providing a substrate with a major surface;

forming an array of light emitting diodes on the major surface of the substrate comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures, having a defined display area;

forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes;

providing a driver device formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads, in electrical cooperation with the drive components, cooperatively positioned to engage the bond pads of the array of light emitting diodes;

interfacing the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads, in electrical cooperation with the drive components of the driver device, thereby electrically connecting the light emitting diode device to the driver device; and

selectively removing the substrate from the light emitting diode device.

7. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, includes the step of forming a plurality of row and column connection pads routed to the bond pads, in electrical cooperation with the array of light emitting diodes, located on an uppermost surface of the display area and the step of forming a plurality of bond pads, in electrical cooperation with the drive components, includes routing the bond pads to an uppermost surface of the driver device, cooperatively positioned to engage the bond pads of the array of light emitting diodes.

8. A method of fabricating a light emitting diode display package as claimed in claim 7 wherein the interfacing of the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads in electrical cooperation with the driver device includes flip chip solder bump bonding of the bond pads.

9. A method of fabricating a light emitting diode display package as claimed in claim 8 further including the step of underfilling an area formed between the light emitting diode device and the driver device with one of a nonconductive polymer or an epoxy material.

10. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of providing a substrate includes providing a substrate of gallium arsenide.

11. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of forming an array of light emitting diodes further includes forming an etch stop layer of material on the major surface of the substrate, forming a conductive layer of material on the etch stop layer, forming a first carrier confinement layer on the conductive layer, forming an active layer on the first carrier confinement layer, forming a second carrier confinement layer on the active layer, selectively forming a conductive cap layer on the second carrier confinement layer to provide exposed surface areas of the second confinement layer, thereby defining exposed row areas and exposed column areas, with an array of diode light emitting areas covered by the conductive cap layer positioned in rows and columns therebetween.

12. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of forming an array of light emitting diodes further includes providing a plurality of LED contact metallizations, comprised of a reflective metal.

13. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of removing the substrate from the light emitting diode device includes selectively etching away the substrate, thereby leaving an indium-galium-aluminium-phosphide epilayer of the light emitting diode device exposed.

14. A method of fabricating a light emitting diode display package as claimed in claim 6 wherein the step of removing the substrate from the light emitting diode device includes a release layer, whereby the release layer is selectively etched away, leaving an indium-gallium-aluminum-phosphide epilayer of the light emitting diode chip exposed.

15. A method of fabricating a light emitting diode display package comprising the steps of:

providing a substrate of semiconductor material with a major surface;

forming an array of light emitting diodes on the major surface of the substrate comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures, thereby forming a light emitting diode device having a defined display area;

forming a plurality of bond pads, in electrical cooperation with the array of light emitting diodes, positioned on an uppermost surface of the display area;

forming a plurality of row and column connections, routed to the plurality of bond pads in electrical cooperation with the array of light emitting diodes;

providing a driver device formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads, in electrical cooperation with the drive components, routed to an uppermost surface of the driver device, cooperatively positioned to engage the bond pads of the array of light emitting diodes;

bump bonding the plurality of bond pads, in electrical cooperation with the array of light emitting diodes, to the plurality of bond pads, in electrical cooperation with the drive components of the driver device, thereby electrically connecting the light emitting diode device to the driver device;

underfilling an area formed between the light emitting diode device and the driver device with a non-conductive material; and

selectively removing the substrate of semiconductor material from the light emitting diode device.

16. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of providing a substrate includes providing a substrate of gallium arsenide.

17. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of forming an array of light emitting diodes further includes forming an etch stop layer of material on the major surface of the substrate, forming a conductive layer on the etch stop layer, forming a first carrier confinement layer on the conductive layer, forming an active layer on the first carrier confinement layer, forming a second carrier confinement layer on the active layer, selectively forming a conductive cap layer on the second carrier confinement layer to provide exposed surface areas of the second carrier confinement layer, thereby defining exposed row areas and exposed column areas, with an array of diode light emitting areas covered by the conductive cap layer positioned in rows and columns therebetween.

18. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of forming an array of light emitting diodes further includes forming a plurality of LED contact metallizations, comprised of a reflective metal.

19. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of underfilling an area formed between the light emitting diode device and the driver device with a non-conductive material includes underfilling with one of a polymer material or an epoxy material.

20. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of removing the substrate of semiconductor material from the light emitting diode device includes selectively etching away the substrate, thereby leaving an indium-galium-aluminium-phosphide phosphide layer of the light emitting diode device exposed.

21. A method of fabricating a light emitting diode display package as claimed in claim 15 wherein the step of removing the substrate of semiconductor material from the light emitting diode device includes a release layer, whereby the release layer is selectively etched away, leaving an indium-galium-aluminium-phosphide epilayer of the light emitting diode device exposed.

22. A method of fabricating a light emitting diode display package comprising the steps of:

providing a substrate of gallium arsenide with a major surface;

forming an array of light emitting diodes on the major surface of the substrate comprised of a plurality of indium-gallium-aluminum-phosphide (InGaAlP) light emitting diode structures, thereby forming a light emitting diode device having a defined display area;

forming a plurality of bond pads in electrical cooperation with the array of light emitting diodes, positioned on an uppermost surface of the display area;

forming a plurality of row and column connections, routed to the plurality of bond pads in electrical cooperation with the array of light emitting diodes;

providing a separate driver device formed on a silicon substrate, having a plurality of drive components formed therein;

forming a plurality of bond pads in electrical cooperation with the drive components, routed to an uppermost surface of the driver device;

bump bonding the plurality of bond pads in electrical cooperation with the light emitting diodes, in flip chip attachment of the plurality of bond pads in electrical cooperation with the drive components of the driver device, thereby electrically connecting the light emitting diode device to the driver device;

underfilling an area formed between the light emitting diode device and the driver device with at least one of an epoxy and a polymer; and

selectively removing the gallium arsenide substrate from the light emitting diode device thereby leaving an exposed epilayer.

23. A method of fabricating a light emitting diode display package as claimed in claim 22 wherein the step of forming an array of light emitting diodes on the major surface of the substrate, includes forming a plurality of layers of material on the substrate, including at least an etch stop layer of material, supported by the major surface of the substrate, a conductive layer of material on the etch stop layer, a first carrier confinement layer on the conductive layer, an active layer on the first carrier confinement layer, and a second carrier confinement layer on the active layer and implanting impurities in the plurality of layers of material into a plurality of isolated light emitting diodes positioned in an array of rows and columns and to form a plurality of vertical conductors through at least some of the plurality of layers to provide surface contacts to each diode in the array.