Method of manufacturing a vertical semiconductor device

• US 5,780,324 A
• Filed: 02/22/1996
• Issued: 07/14/1998
• Est. Priority Date: 03/30/1994
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Tokura, Norihito, Takahashi, Shigeki, Hara, Kunihiko, Yamamoto, Tsuyoshi, Kataoka, Mitsuhiro
• Primary Examiner(s): Nguyen, Tuan H.
• Application Number:
  US08/605,637
• Time in Patent Office: 873 Days
• Field of Search: 437/40, 437/41, 437/44, 437/69, 437/72, 437/73, 437/913, 437/915, 437/154, 148/DIG. 126, 438/135, 438/138, 438/268, 438/710
• US Class Current: 438/138
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A manufacturing method of a vertical DMOSFET having a concave channel structure, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform, is disclosed. On a surface of a (100)-oriented n^- -on-n⁺ epitaxial wafer is formed an initial groove by chemical dry etching. The grooved surface is then oxidized by LOCOS technique to form a LOCOS oxide film, whereby the concave structure is formed on the epitaxial wafer. The concave width is set to be at least twice the concave depth, and the sidewall angle is set to be approximately 50° to make the sidewall plane (111) of high channel mobility plane. Following this process, p-type and n-type impurities are diffused from the main surface using the LOCOS oxide film as a double diffusion mask to form a body region and a source region.

Claims

1. A manufacturing method of a vertical semiconductor device, comprising the steps of:

providing a first conductivity type semiconductor layer disposed on a semiconductor substrate;

forming a mask having an opening part within a specified region on a main surface of said first conductivity type semiconductor layer;

generating plasma within a plasma generation chamber containing an etching gas to form a chemically active etching gas, said plasma generation chamber being physically separated from a reaction chamber in which said semiconductor substrate and said semiconductor layer are disposed;

introducing said chemically active etching gas into said reaction chamber by transporting said chemically active gas from said plasma generation chamber to said reaction chamber via a passageway between said plasma generation chamber and said reaction chamber, said chemically active gas forming a first groove in said semiconductor layer by chemical dry etching said semiconductor layer through said opening part of said mask;

forming a local oxide film to a specified thickness from said main surface within said semiconductor layer within said specified region by locally oxidizing a region including said first groove so as to define a concave configuration in said locally oxidized region of said semiconductor layer due to erosion of said semiconductor layer in said locally oxidized region by said local oxide film, said concave configuration having a bottom surface and a sidewall surface not treater than 4 nm in a surface roughness;

introducing second conductivity type impurities from said main surface to form a second conductivity type body region within said semiconductor layer wherein a boundary of said second conductivity type body region is defined by said sidewall surface of said concave configuration;

introducing first conductivity type impurities into said second conductivity type body region from said main surface to form a first conductivity type source region within said second conductivity type body region, whereby a channel region is defined by said second conductivity type body region at said sidewall surface of said concave configuration between said semiconductor layer and said source region;

removing said local oxide film to expose said concave configuration;

forming a gate electrode along said sidewall surface of said concave configuration and at least over said channel region with a gate insulating layer interposed there between;

forming a source electrode electrically connected to at least said source region; and

forming a drain electrode electrically connecting to said semiconductor substrate.

2. A method according to claim 1 wherein said local oxide film forming step includes forming said local oxide film so that said concave configuration has a width which is at least twice a depth thereof.

3. A method according to claim 2, wherein said width of said concave configuration is not less than 0.5 μ

m.

4. A method according to claim 2, wherein said depth of said concave configuration is selected to be between 0.5 μ

m and 5 μ

m.

5. A method according to claim 2, wherein said second conductivity type body region forming step includes forming said second conductivity type body region so as to have a junction depth not less than said depth of said concave configuration.

6. A method according to claim 1, wherein said chemical dry etching is an isotropic etching process.

7. A method according to claim 1, wherein said local oxide film forming step includes oxidizing said main surface of said semiconductor layer by using said mask formed in said mask forming step to form said local oxide film.

8. A method according to claim 1, wherein said body region forming step and said source region forming step are performed using said local oxide film as a diffusion mask.

9. A method according to claim 1, wherein said semiconductor layer is composed of silicon and said mask forming step includes forming said mask patterned to have said opening part extending at least along a <

011>

crystal axis of said semiconductor layer.

10. A method according to claim 9, wherein said local oxide film forming step includes forming said local oxide film so that said sidewall surface of said concave configuration is substantially oriented in (111) crystal plane.

11. A method according to claim 9, wherein said mask is patterned such that said opening part includes a first opening part extending along said <

011>

crystal axis and a second opening part extending along a direction perpendicular to said <

011>

crystal axis.

12. A method according to claim 1, wherein said semiconductor layer is composed of silicon and said local oxide film forming step includes forming said local oxide film so that said sidewall surface of said concave configuration is substantially oriented in either of (110) or (100) crystal plane.