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Method of forming trench transistor and isolation trench

  • US 5,780,340 A
  • Filed: 10/30/1996
  • Issued: 07/14/1998
  • Est. Priority Date: 10/30/1996
  • Status: Expired due to Term
First Claim
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1. A method of forming an IGFET and an isolation trench, comprising the steps of:

  • simultaneously forming a transistor trench and an isolation trench in a substrate, whereinthe transistor trench includes first and second opposing sidewalls and a first bottom surface, and the isolation trench includes third and fourth opposing sidewalls and a second bottom surface;

    forming first and second spacers adjacent to the first and second sidewalls, respectively;

    forming a gate insulator on the first bottom surface;

    forming a gate electrode on the gate insulator and the spacers; and

    forming a source and a drain in the substrate and adjacent to the first bottom surface.

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