Electromagnetic radiation imaging device using dual gate thin film transistors

• US 5,780,858 A
• Filed: 10/04/1996
• Issued: 07/14/1998
• Est. Priority Date: 02/11/1994
• Status: Expired due to Term

• Current Assignee: Joani Access LLC (Intellectual Ventures LLC)
• Original Assignee: Litton Systems Canada Limited (L3Harris Technologies, Inc.)
• Inventors: Singh, Surendra, Waechter, David
• Primary Examiner(s): Glick, Edward J.
• Application Number:
  US08/693,184
• Time in Patent Office: 648 Days
• Field of Search: 250/208.1, 250/370.09, 250/370.11, 250/370.08
• US Class Current: 250/370.09
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers

Abstract

An electromagnetic radiation imaging device comprising an energy absorbing layer overlying an array of thin film transistors (TFTs). each of the thin film transistors incorporates a dual gate. The lower gate provides row selection, while the upper gate of the same device modulates current conducted by the transistor. By utilizing dual gates, a reduction in the number of transistors is achieved over prior art imaging devices, thereby increasing production yield. Furthermore, the use of dual gate transistors provides increased versatility in choosing the bias point of the transistors.

Claims

1. An electromagnetic radiation imaging device comprising:

a) a substrate;

b) a first plurality of thin film transistors deposited on said substrate, each one of said transistors having a semiconductor channel, a lower gate electrode underlying said semiconductor channel for periodically enabling a respective row of said transistors, an upper gate electrode overlying said semiconductor channel for regulating current flowing through said semiconductor channel when said respective row of said transistors is enabled, a drain electrode and a source electrode, each said drain electrode of said plurality of thin film transistors being interconnected to form an output line, and each said source electrode of said plurality of thin film transistors being interconnected to form a data line;

c) an energy absorbing layer overlying said plurality of thin film transistors for generating charge in response to being exposed to electromagnetic radiation;

d) a top electrode connected to a source of potential, said top electrode overlying said energy absorbing layer such that a potential difference causes said charge to be collected on each upper gate electrode thereby regulating said current flowing through each semiconductor channel in proportion to intensity of said electromagnetic radiation;

e) means connected to each said data line for measuring said current and thereby detecting said intensity of electromagnetic radiation; and

f) a second plurality of thin film transistors adjacent respective ones of said first plurality of thin film transistors and sharing said upper gate electrodes therewith for discharging said charge collected on said upper gate electrodes after said respective ones of said first plurality of thin film transistors has been enabled.

2. The electromagnetic radiation imaging device of claim 1, wherein each lower gate electrode and each semiconductor channel are separated by a first dielectric layer and each upper gate electrode and each semiconductor channel are separated by a second dielectric layer.

3. The electromagnetic radiation imaging device of claim 2, wherein said source and drain electrodes are deposited on said first dielectric layer for contacting each semiconductor channel at the bottom thereof.

4. The electromagnetic radiation imaging device of claim 2, including a further dielectric layer intermediate said first and second dielectric layers, and wherein said source and drain electrodes are deposited on said further dielectric layer for contacting each semiconductor channel at the top thereof.

5. The electromagnetic radiation imaging device of claim 1, wherein said energy absorbing layer is fabricated from selenium for detecting x-rays.

6. The electromagnetic radiation imaging device of claim 1, wherein said energy absorbing layer is fabricated from an amorphous silicon PIN stack for detecting visible light.

7. The electromagnetic radiation imaging device of claim 1, wherein each of said electrodes is fabricated from metal material.

8. The electromagnetic radiation imaging device of claim 1, wherein one of said electrodes is fabricated from indium tin oxide.

9. The electromagnetic radiation imaging device of claim 1, wherein said first and second plurality of thin film transistors are fabricated from one of amorphous silicon, polycrystaline silicon or cadmium selenide.

10. An electromagnetic radiation imaging device comprising:

a) a substrate;

b) a first plurality of thin film transistors deposited on said substrate, each one of said transistors having a first semiconductor channel, a first lower gate electrode underlying said first semiconductor channel for periodically enabling a respective row of said transistors, an upper gate electrode overlying said first semiconductor channel for regulating current flowing through said semiconductor channel when said respective row of said transistors is enabled, a first drain electrode and a first source electrode, each said first drain electrode of said first plurality of thin film transistors being interconnected to form an output line, and each said first source electrode of said first plurality of thin film transistors being interconnected to form a data line;

c) a second plurality of thin film transistors, each one of said second plurality of transistors having a further semiconductor channel underlying said upper gate electrode such that said upper gate electrode of respective ones of said first plurality and said second plurality of thin film transistors is shared, a further lower gate electrode underlying said further semiconductor channel for periodically enabling a respective row of said second plurality of thin film transistors, a further source electrode connected to said upper gate electrode and a further drain electrode connected to said output line, for discharging charge collected on said upper gate electrode after said respective rows of said plurality of thin film transistors have been enabled;

d) an energy absorbing layer overlying said first plurality and said second plurality of thin film transistors for generating charge in response to being exposed to electromagnetic radiation;

e) a top electrode connected to a source of potential, said top electrode overlying said energy absorbing layer such that a potential difference causes said charge to be collected on said upper gate electrode thereby regulating said current flowing through said first semiconductor channel in proportion to intensity of said electromagnetic radiation; and

f) means connected to each said data line for measuring said current and thereby detecting said intensity of electromagnetic radiation.

11. The electromagnetic radiation imaging device of claim 10, wherein said first and further lower gate electrodes and said first and further semiconductor channels are separated by a first dielectric layer and said upper gate electrode and said first and further semiconductor channels are separated by a second dielectric layer.

12. The electromagnetic radiation imaging device of claim 11, wherein said first and said further source and drain electrodes are deposited on said first dielectric layer for contacting said first and said further semiconductor channels, respectively, at the bottom thereof.

13. The electromagnetic radiation imaging device of claim 11, including a further dielectric layer intermediate said first and second dielectric layers, and wherein said first and said further source and drain electrodes are deposited on said further dielectric layer for contacting said first and said further semiconductor channels, respectively, at the top thereof.