Semiconductor device capable of easily forming cavity and its manufacturing method

• US 5,780,873 A
• Filed: 08/13/1996
• Issued: 07/14/1998
• Est. Priority Date: 09/01/1995
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Itaya, Kazuhiko, Onomura, Masaaki, Yamamoto, Masahiro, Saito, Shinji, Ishikawa, Masayuki, Fujimoto, Hidetoshi, Rennie, John, Sugawara, Hideto, Hatakoshi, Genichi
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/689,689
• Time in Patent Office: 700 Days
• Field of Search: 257/95, 257/97, 257/103, 257/627
• US Class Current: 257/95
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0208 Semi-insulating substrates
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/0218 Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/2232 with inner confining structure between the active layer and the lower electrode
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32391 based on In(Ga)(As)P
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4043 with vertically stacked active layers
• CPC Class Codes: H01S 5/4087 : emitting more than one wavelength

Abstract

A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

Claims

1. A semiconductor device comprising:

a device section having a semiconductor of a hexagonal type; and

a crystal section of a cubic type combined into the device section and to be cleaved.

2. The semiconductor device according to claim 1, wherein said device section is a semiconductor light-emitting device having a compound semiconductor containing nitrogen.

3. A semiconductor device comprising:

a device section having a semiconductor of a hexagonal type; and

a crystal section combined into said device section, and said crystal section having a cubic type semiconductor substrate or semiconductor layer such that its 011!-orientation or 011!-orientation is conformed to an orientation determined by an integer notation of the hexagonal type semiconductor constituting said device section.

4. The semiconductor device according to claim 3, wherein the orientation determined by the integer notation of the hexagonal type semiconductor is a <

1120>

-orientation.

5. The semiconductor device according to claim 3, wherein said device section is a semiconductor light-emitting device having a compound semiconductor containing nitrogen.

6. A semiconductor light-emitting device comprising:

a semiconductor light-emitting device section of a hexagonal type; and

an electrically conductive semiconductor substrate of a cubic type combined into said semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming said semiconductor light-emitting device section.

7. The semiconductor light-emitting device according to claim 6, wherein at least a metallic layer or an oxide layer is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.

8. The semiconductor light-emitting device according to claim 7, wherein said semiconductor light-emitting device section comprises a compound semiconductor containing nitrogen, and has a mirror surface induced and cleaved by cleaving said conductive semiconductor substrate.

9. The semiconductor light-emitting device according to claim 8, wherein a second semiconductor light-emitting device section capable of emitting a red laser beam is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.

10. The semiconductor light-emitting device according to claim 6, wherein said semiconductor light-emitting device section and said conductive semiconductor substrate are directly contacted each other.

11. The semiconductor light-emitting device according to claim 6, wherein an amorphous layer having structural elements for said semiconductor light-emitting section and said conductive semiconductor substrate is formed between said semiconductor light-emitting section and said conductive semiconductor substrate.

12. The semiconductor light-emitting device according to claim 11, wherein said amorphous layer is formed by directly bonding said semiconductor light-emitting section and said conductive semiconductor substrate to each other.

13. The semiconductor light-emitting device according to claim 12, wherein said semiconductor light-emitting device section comprises a compound semiconductor containing nitrogen, and has a mirror surface induced and cleaved by cleaving said conductive semiconductor substrate.

14. The semiconductor light-emitting device according to claim 6, wherein a second semiconductor light-emitting device section capable of emitting a red laser beam is formed between said semiconductor light-emitting device section and said conductive semiconductor substrate.