Asymmetric contacted metal-semiconductor-metal photodetectors

• US 5,780,916 A
• Filed: 10/10/1995
• Issued: 07/14/1998
• Est. Priority Date: 10/10/1995
• Status: Expired due to Fees

• Current Assignee: University of Delaware
• Original Assignee: University of Delaware
• Inventors: Gao, Wei, Berger, Paul R.
• Primary Examiner(s): WHITEHEAD JR, CARL W
• Application Number:
  US08/541,417
• Time in Patent Office: 1,008 Days
• Field of Search: 257/21, 257/20, 257/97, 257/98, 257/436, 257/451, 257/485, 257/497, 257/187, 257/192, 257/257, 257/458, 257/54, 257/47, 257/449, 257/457, 372/45, 372/96, 372/46, 372/99
• US Class Current: 257/471
• CPC Class Codes: H01L 31/1085 the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Abstract

A metal-semiconductor-metal (MSM) photodetector, specifically a new, improved low noise device is disclosed. The disclosed device is a MSM photodiode in which the cathode and anode are made of different materials with optimal Schottky barrier heights. One of these materials is chosen to provide a high ratio of Schottky barrier height to hole transport and the other to provide a high ratio of Schottky barrier height to electron transport. The disclosed MSM photodetector is designed to allow each Schottky barrier to be individually optimized to the point that a wide bandgap Schottky barrier enhancement layer and its associated heterointerface may become unnecessary. Elimination of the charge buildup at the heterointerface enhances carrier extraction resulting in photodetectors with elevated quantum efficiency and enhanced bandwidths.

Claims

1. A photodetector comprising:

a semiconductor substrate having an active region on one surface thereof,

a first set of electrodes deposited on the active region of the substrate made from a first material,

a second set of electrodes deposited on the active region of the substrate made of a second material, wherein the first set and second set of electrodes are made of different metals having different Schottky barrier heights.

2. A photodectector as claimed in claim 1, wherein the active region of the substrate is InGaAs, InGaAsP, or GaAs.

3. A photodetector as claimed in claim 1, wherein the photodetector includes a barrier enhancement layer.

4. A photodetector as claimed in claim 3, wherein the barrier enhancement layer comprises lattice matched InP.

5. A photodetector as claimed in claim 3, wherein the transition from the substrate to the barrier enhancement layer is graded.

6. A photodetector as claimed in claim 3, wherein an undoped buffer layer is interposed between the substrate and active region.

7. A photodetector as claimed in claim 3, wherein the substrate is an Fe-doped InP.

8. A photodetector as claimed in claim 3, wherein the substrate is an undoped InP.

9. A photodetector as claimed in claim 1, wherein the photodetector is electrically isolated from surrounding structures.

10. A photodetector as claimed in claim 9, wherein the electrical isolation is accomplished by etching the photodiode down to the substrate to form a mesa.

11. A photodetector as claimed in claim 10, wherein the mesa has sidewalls which are passivated with a dielectric material.

12. A photodetector as claimed in claim 11, wherein the dielectric material is silicon dioxide or silicon nitride.

13. A photodetector as claimed in claim 1, wherein the photodiode has an active region from 0.5 to 1.00 micrometers thick.

14. A photodetector as claimed in claim 1, wherein the electrodes are spaced apart by less than 1 micron.

15. A photodetector as claimed in claim 1, wherein the electrodes are spaced apart by about 300 nm.

16. A photodetector as claimed in claim 1, wherein a portion of the electrodes are about 1 micron wide.

17. A photodetector as claimed in claim 1, wherein a portion of the electrodes are less than 1 micron wide.

18. A photodetector as claimed in claim 1, wherein a portion of the electrodes are 300 micrometers wide.

19. A photodetector as claimed in claim 1, wherein at least one metal is opaque.

20. A photodetector as claimed in claim 1, wherein the photodetector is at least 100 square micrometers in area.

21. A photodetector as claimed in claim 1, wherein the photodetector is from about 100 to about 10,000 square micrometers in area.

22. A photodetector as claimed in claim 1, wherein the photodetector is from about 2,500 to about 10,000 square micrometers in area.

23. A photodetector as claimed in claim 1, wherein at least one electrode is 50-100 angstroms thick.

24. A photodetector as claimed in claim 1, wherein at least one electrode is overlaid with a low resistance metal.

25. A photodetector as claimed in claim 1, wherein at least one electrode has a total thickness of 1000-5000 angstroms.

26. A photodetector as claimed in claim 24, wherein the metal is gold.

27. A photodetector as claimed in claim 1, further comprising an anti-reflective coating on the active region of the substrate surface.

28. A photodetector as claimed in claim 1, further comprising a reflective coating on at least one surface of the substrate other than the active region.

29. A photodetector as claimed in claim 1, wherein one electrode material is Ti, Ag, Pt, Ni, Cr, Al, or Ag.

30. A photodetector as claimed in claim 1, wherein one electrode material is a refractory metal.

31. A photodetector as claimed in claim 1, wherein one electrode material is Mo, Ta, or W.

32. A photodetector as claimed in claim 1, wherein one electrode material is a silicide.

33. A photodetector as claimed in claim 1, wherein one electrode material is a transparent conductor.

34. A photodetector as claimed in claim 1, wherein one electrode material is indium oxide, cadmium oxide, or indium tin oxide.

35. The photodetector of claim 1 which is a metal-semiconductor-metal photodetector.