Surge arrester
First Claim
1. A surge arrester, comprising:
- a pair of spaced metal electrodes; and
a semiconductor element interposed between the metal electrodes and in contact with at least one of the metal electrodes, the semiconductor element having a peripheral edge functioning at least to partially bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester,wherein the semiconductor element includes a metal coating on at least a substantial portion of its outer surface which is in contact with the at least one metal electrode, the metal coating extending generally parallel to the current path on the peripheral edge towards the gap.
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Accused Products
Abstract
A surge arrester which includes a pair of spaced metal electrodes and a semiconductor element interposed between the metal electrodes and in contact with at least one of the metal electrodes. The semiconductor element functions at least partially to bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester. The semiconductor element includes a metal coating on at least a substantial portion of its outer surface which is in contact with the at least one metal electrode. The coating includes a gap between the electrodes and the gap may include a notch in the gap.
33 Citations
30 Claims
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1. A surge arrester, comprising:
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a pair of spaced metal electrodes; and a semiconductor element interposed between the metal electrodes and in contact with at least one of the metal electrodes, the semiconductor element having a peripheral edge functioning at least to partially bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester, wherein the semiconductor element includes a metal coating on at least a substantial portion of its outer surface which is in contact with the at least one metal electrode, the metal coating extending generally parallel to the current path on the peripheral edge towards the gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A surge arrester, comprising:
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a pair of spaced metal electrodes; and a semiconductor element interposed between the metal electrodes and in contact with at least one of the metal electrodes, the semiconductor element functioning at least to partially bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester, wherein the semiconductor element includes a metal coating on at least a substantial portion of its outer surface which is in contact with the at least one metal electrode, and wherein the semiconductor element is in contact with only one of the metal electrodes and is electrically isolated from the other metal electrode. - View Dependent Claims (12, 13)
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14. A surge arrester, comprising:
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a pair of spaced circular metal electrodes; and a semiconductor disk in contact with and interposed between the metal electrodes, the semiconductor disk having a peripheral edge functioning to bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester, and wherein the semiconductor disk includes a metal coating on at least a substantial portion of its outer surface which is in contact with at least one of the metal electrodes, the metal coating extending generally parallel to the current path on the peripheral edge towards the gap. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A surge arrester, comprising:
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pair of spaced circular metal electrodes; and a semiconductor disk interposed between the metal electrodes with the semiconductor disk in contact with one of the metal electrodes and electrically isolated from the other metal electrode, the semiconductor disk functioning partially to bridge a gap between the metal electrodes with such gap serving as a current path between the metal electrodes in the event a voltage applied across the metal electrodes exceeds a firing voltage of the surge arrester, and wherein the semiconductor disk includes a metal coating on at least a substantial portion of its outer surface which is in contact with the one metal electrode. - View Dependent Claims (22)
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- 23. A method of making a surge arrester comprising the steps of fitting two electrodes on opposite sides of a semiconductor disk, providing a conductive metal coating between at least one of said electrodes and said semiconductor disk, and producing a precision annular gap in said coating on a peripheral edge of said semiconductor disk between said electrodes.
Specification