Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array

• US 5,784,328 A
• Filed: 12/23/1996
• Issued: 07/21/1998
• Est. Priority Date: 12/23/1996
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Leung, Raymond, Kapoor, Ashok, Wik, Thomas R., Irrinki, V. Swamy, Owens, Alex
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): NGUYEN, HIEN N
• Application Number:
  US08/779,999
• Time in Patent Office: 575 Days
• Field of Search: 365/222, 365/211, 365/149, 365/183
• US Class Current: 365/222
• CPC Class Codes: G11C 11/406 Management or control of the refreshing or charge-regeneration cycles
• CPC Class Codes: G11C 11/40626 Temperature related aspects of refresh operations
• CPC Class Codes: G11C 11/565 using capacitive charge storage elements
• CPC Class Codes: G11C 16/3418 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: G11C 16/3431 Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

A DRAM memory array including a temperature sensor for adjusting a refresh rate depending upon temperature. The DRAM memory array includes a plurality of memory cells, each configured to allow storage and retrieval of more than two discrete memory states. A refresh circuit is coupled to the memory array for periodically refreshing the discrete storage state of each memory cell. The temperature sensor is situated on the same semiconductor die upon which the memory array is fabricated, and generates a signal indicative of the temperature of the semiconductor die. A control circuit receives the signal from the temperature sensor and responsively generates a refresh rate signal which is provided to control the refresh rate of the refresh circuit. In one specific implementation, a ROM look-up table is coupled to the control circuit and includes a plurality of entries which indicate the desired refresh rates for particular temperatures. By controlling the refresh rate dependent upon the temperature of the semiconductor die, proper state retention is ensured within each of the memory cells while allowing performance to be optimized.

Claims

1. A memory circuit comprising:

a memory array including a plurality of memory cells;

a refresh circuit coupled to said memory array and configured to refresh said plurality of memory cells;

a temperature sensor for generating a temperature signal indicative of a temperature; and

a control circuit coupled to said temperature sensor and to said refresh circuit, wherein said control circuit is configured to generate a refresh rate signal dependent upon said temperature signal generated by said temperature sensor;

wherein said refresh circuit is configured to vary a rate of said refresh of said of said plurality of memory cells depending upon said refresh rate signal;

a look-up table unit coupled to said control circuit, wherein said look-up table unit is configured to store a plurality of entries, wherein each of said plurality entries indicates a desired refresh rate for a particular corresponding temperature.

2. The memory circuit as recited in claim 1 wherein said look-up table unit includes a read only memory.

3. The memory circuit as recited in claim 1 further comprising an address decode unit coupled to said memory array, wherein said address decode unit is configured to select a designated row of said memory array depending upon an address signal.

4. The memory circuit as recited in claim 1 further comprising a read/write logic unit configured to enable read and write operations of said memory array.

5. The memory circuit as recited in claim 1, wherein said refresh circuit decreases said refresh rate as said temperature increases.

6. The memory circuit as recited in claim 1 wherein said temperature sensor is situated on a semiconductor die of which said memory array is fabricated.

7. The memory circuit as recited in claim 1 wherein each of said plurality of memory cells in configured to store at least three discrete logic values.

8. A method for refreshing memory cells in a memory circuit comprising:

sensing a temperature;

generating a signal indicative of said temperature;

varying a refresh rate of said memory cells depending upon said signal indicative of said temperature,

accessing a ROM look-up table to determine a desired refresh rate for said temperature.

9. The method for refreshing memory cells in a memory circuit as recited in claim 8 further comprising sensing one of more than two discrete logic states within each of said plurality of memory cells.

10. The method for refreshing a plurality of memory cells in a memory circuit as recited in claim 8 further comprising increasing said refresh rate in response to a decrease in said temperature.

11. A memory circuit comprising:

a memory array including a plurality of memory cells, wherein each of said memory cells includes;

a storage transistor with a first terminal, a second terminal, and a gate, said first terminal coupled to a predetermined voltage;

a read transistor coupled to said second terminal, said read transistor configured to conduct a current through said storage transistor when a read signal is asserted; and

a write transistor coupled to said gate, said write transistor configured to store a charge on said gate of said storage transistor when a write signal is asserted;

an analog-to-digital converter coupled to detect a value indicative of a voltage across said storage transistor, wherein said analog to digital converter is configured to convert said value to one of at least three distinct digital values;

a refresh circuit coupled to said memory array and configured to refresh said plurality of memory cells;

a temperature sensor for generating a temperature signal indicative of a temperature; and

a control circuit coupled to said temperature sensor and to said refresh circuit, wherein said control circuit is configured to generate a refresh rate signal dependent upon said temperature signal generated by said temperature sensor;

wherein said refresh circuit is configured to vary a rate of said refresh of said plurality of memory cells depending upon said refresh rate signal.

12. The memory circuit as recited in claim 11 further comprising a look-up table unit coupled to said control circuit, wherein said look-up table unit is configured to store a plurality of entries, wherein each of said plurality entries indicates a desired refresh rate for a particular corresponding temperature.

13. The memory circuit as recited in claim 12 wherein said look-up table unit includes a read only memory.

14. The memory circuit as recited in claim 11 wherein said analog-to-digital converter comprises a plurality of comparators, each coupled to compare said input voltage to one of a plurality of reference voltages.

15. The memory circuit as recited in claim 11 further comprising a data line driver coupled to receive one of said distinct digital values, said data line driver configured to responsively provide a write voltage to said write transistor.

16. The memory circuit as recited in claim 11 further comprising an address decoder coupled to said memory array and configured to assert said read signal in response to receiving an address signal and an enable signal.

17. The memory circuit as recited in claim 11 further comprising a bi-directional gate configured to convert n binary data bits into m logic signals during a write operation, wherein each of said logic signals has one of said distinct digital values, said bi-directional gate further configured to convert m logic signals, each having one of said distinct digital values, into n binary data bits during a read operation.

18. The memory circuit as recited in claim 11 further comprising a sense amplifier coupled to detect said current through said storage transistor, said sense amplifier configured to responsively provide said input voltage.