Atom lithographic mask having diffraction grating aligned with primary mask pattern

• US 5,786,116 A
• Filed: 02/14/1997
• Issued: 07/28/1998
• Est. Priority Date: 02/14/1997
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Rolfson, J. Brett
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US08/799,166
• Time in Patent Office: 529 Days
• Field of Search: 430/5, 430/322, 430/313, 378/34.35
• US Class Current: 430/5
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process

Abstract

An ATOM lithographic mask includes a transparent substrate having both a primary mask pattern and a diffraction grating. The diffraction grating includes chromeless phase shifters configured to diffract exposure energy directed through the substrate to provide off axis illumination for the primary mask pattern. The primary mask pattern can include a patterned opaque layer having an alignment mark formed therein. The alignment mark can be used during fabrication of the mask for accurately aligning the grating pattern and the primary mask pattern. Because of the accurate alignment, the layout, orientation and pitch of the diffraction grating with respect to the primary mask pattern, can be selected to optimize image formation from the mask pattern.

Claims

1. A lithographic mask comprising:

a transparent substrate having a first side and a second side separated by a thickness of the substrate;

a mask pattern comprising a patterned opaque layer formed on the first side of the substrate; and

a diffraction grating formed on the second side of the substrate in alignment with at least a portion of the mask pattern, the diffraction grating comprising a pattern of phase shift grooves etched in the second side of the substrate to a depth selected to diffract and phase shift exposure energy transmitted through the phase shift grooves relative to exposure energy transmitted through adjacent full thickness portions of the substrate to provide off axis illumination for the mask pattern.

2. The lithographic mask as claimed in claim 1 further comprising an alignment mark formed in the opaque layer for aligning the mask pattern to the diffraction grating.

3. A lithographic mask comprising:

a transparent substrate having a first side and a second side separated by a thickness of the substrate;

a mask pattern comprising a patterned opaque layer formed on the first side of the substrate;

an alignment mark formed in the opaque layer; and

a diffraction grating comprising a plurality of phase shift grooves formed on the second side of the substrate in alignment with the alignment mark, the diffraction grating comprising a pattern of phase shift grooves etched in the second side of the substrate to a depth selected to diffract and phase shift exposure energy transmitted through the phase shift grooves relative to exposure energy transmitted through adjacent full thickness portions of the substrate, to provide off axis illumination for the mask pattern.

4. The lithographic mask as claimed in claim 3 wherein the diffraction grating comprises a line-space pattern.

5. The lithographic mask as claimed in claim 3 wherein the diffraction grating comprises a checkerboard pattern.

6. The mask as claimed in claim 3 wherein a pitch, orientation and layout of the phase shift grooves are selected to enhance features printed onto a target by the mask pattern.

7. The mask as claimed in claim 3 wherein an orientation of the phase shift grooves with respect to an orientation of the mask pattern is 0°

or 90°

.

8. The mask as claimed in claim 3 wherein an orientation of the phase shift grooves with respect to an orientation of the mask pattern is between 1°

to 89°

.

9. A lithographic mask comprising:

a transparent substrate having a first side and a second side;

an opaque layer formed on the first side of the substrate; and

a pattern of phase shift members formed on the second side of the substrate, the phase shift members comprising a transparent, patterned phase layer deposited on the second side to a thickness selected to phase shift and diffract exposure energy directed through the phase shift members relative to exposure energy directed through adjacent portions of the substrate to provide off axis illumination of the mask pattern.

10. The mask as claimed in claim 9 further comprising a second pattern of phase shift members configured to diffract exposure energy to provide off axis illumination for a selected portion of the mask pattern.

11. The mask as claimed in claim 9 wherein the phase shift members comprise a grating pattern having an orientation, layout and pitch selected to enhance printing of selected features of the mask pattern.

12. A lithographic mask comprising:

a substrate having a first side and a second side;

a primary mask pattern formed on the first side of the substrate comprising a patterned opaque layer having an alignment mark therein; and

a pattern of phase shift members formed on the second side of the substrate in alignment with the alignment mark and selected portions of the primary mask pattern, the phase shift members comprising a transparent, patterned phase layer deposited on the second side to a thickness selected to phase shift and diffract exposure energy directed through the phase shift members relative to exposure energy directed through adjacent portions of the substrate to provide diffracted exposure energy for the primary mask pattern.

13. The mask as claimed in claim 12 wherein the phase shift members comprise a grating pattern oriented at an angle that is generally parallel to an orientation of the selected portions.

14. The mask as claimed in claim 12 wherein the phase shift members comprise a grating pattern oriented at an angle that is generally perpendicular to an orientation of the selected portions.

15. The mask as claimed in claim 12 wherein the phase shift members comprise a grating pattern oriented at an angle with respect to an orientation of the selected portions of between 1°

to 89°

.

16. The mask as claimed in claim 12 wherein the phase shift members comprise a grating pattern oriented at an oblique angle with respect to an orientation of the selected portions.

17. The mask as claimed in claim 12 wherein a thickness of the phase layer is selected to provide a phase shift of π

or odd multiple thereof.

18. A method for fabricating a lithographic mask comprising:

providing a transparent substrate having a first side and a second side separated by a thickness of the substrate;

forming an opaque layer on the first side of the substrate;

forming an alignment mark in the opaque layer;

forming a diffraction grating on the second side of the substrate in alignment with the alignment mark, the diffraction grating comprising a pattern of phase shift grooves etched in the second side of the substrate to a depth selected to diffract and phase shift exposure energy transmitted through the phase shift grooves relative to exposure energy transmitted through adjacent full thickness portions of the substrate; and

forming a primary mask pattern in the opaque layer having at least a portion thereof in alignment with the alignment mark and the diffraction grating.

19. The method as claimed in claim 18 wherein forming the diffraction grating comprises etching the phase shift grooves to a depth selected to produce a phase shift of π

or odd multiple thereof.

20. A method for fabricating a lithographic mask comprising:

providing a transparent substrate;

forming an opaque layer on a first side of the substrate with a first alignment mark;

depositing a layer of resist on a second side of the substrate;

forming a second alignment mark in the layer of resist in alignment with the first alignment mark;

forming a resist mask by exposing a diffraction pattern on the layer of resist with a mask writer configured to view the second alignment mark and align the diffraction pattern with the second alignment mark;

forming a diffraction grating corresponding to the diffraction pattern on the second side of the substrate using the resist mask; and

forming a mask pattern in the opaque layer by depositing a second layer of resist on the opaque layer and exposing the mask pattern in alignment with the diffraction grating using the mask writer.

21. The method as claimed in claim 20 wherein the diffraction grating comprises a line space pattern of etched grooves.

22. The method as claimed in claim 20 wherein the diffraction grating comprises a checkerboard pattern of etched grooves.

23. The method as claimed in claim 20 wherein the diffraction grating is generally perpendicular to the mask pattern.

24. The method as claimed in claim 20 wherein the diffraction grating is generally parallel to the mask pattern.

25. The method as claimed in claim 20 wherein an orientation of the diffraction grating is at an angle of from 1°

to 89°

with respect to the mask pattern.

26. A method for fabricating a lithographic mask comprising:

providing a transparent substrate with an opaque layer on a first side thereof;

forming a first alignment mark in the opaque layer;

forming a layer of resist on a second side of the substrate;

forming a second alignment mark in the layer of resist by exposing the layer of resist through the first alignment mark and developing the layer of resist a first time;

exposing the layer of resist using a mask writer configured to view the second alignment mark;

developing the layer of resist a second time to form a resist mask;

etching the second side of the substrate using the etch mask to form a diffraction grating comprising a pattern of phase shift grooves etched in a second side of the substrate to a depth selected to diffract and phase shift exposure energy transmitted through the phase shift grooves relative to exposure energy transmitted through adjacent full thickness portions of the substrate; and

forming a mask pattern in the opaque layer in alignment with the first alignment mark and at least a portion of the diffraction grating.

27. The method as claimed in claim 26 wherein the diffraction grating comprises a line space pattern.

28. The method as claimed in claim 26 wherein the diffraction grating comprises a checkerboard pattern.

29. The method as claimed in claim 26 wherein forming the mask pattern comprises exposing a second layer of resist on the opaque layer and etching the opaque layer.

30. A lithographic system for exposing a layer of resist formed on a target, comprising:

an exposure source for providing an exposure energy;

a mask comprising;

a transparent substrate having a first side and a second side separated by a thickness;

a patterned opaque layer formed on the first side having a primary mask pattern and an alignment mark formed thereon; and

a diffraction grating formed on the second side of the mask in alignment with the alignment mark, the diffraction grating comprising a pattern of phase shift grooves etched in the second side of the substrate to a depth selected to diffract and phase shift exposure energy transmitted through the phase shift grooves relative to exposure energy transmitted through adjacent full thickness portions of the substrate to provide off axis illumination for the mask pattern.

31. The system as claimed in claim 30 wherein a layout, orientation and pitch of the diffraction grating is selected to enhance an image of the mask pattern printed onto the target.

32. A lithographic system comprising:

an exposure source; and

a mask placed between the exposure source and a target, the mask comprising;

a substrate having a first side and a second side;

a primary mask pattern formed on the first side, the mask pattern comprising a patterned opaque layer with an alignment mark;

a diffraction grating formed on the second side in alignment with at least a portion of the primary mask pattern, the diffraction grating comprising a transparent phase layer deposited and patterned with a thickness selected to form phase shifters configured to phase shift and diffract exposure energy directed through the phase shifters relative to exposure energy directed through adjacent portions of the substrate to provide diffracted exposure energy for the primary mask pattern.

33. The system as claimed in claim 32 wherein a layout, orientation and pitch of the diffraction grating is selected to enhance an image of the mask pattern printed onto the target.

34. The system as claimed in claim 32 wherein an orientation of the diffraction grating is generally perpendicular with respect to an orientation of the primary mask pattern.

35. The system as claimed in claim 32 wherein an orientation of the diffraction grating is generally parallel with respect to an orientation of the primary mask pattern.

36. The system as claimed in claim 32 wherein an orientation of the diffraction grating is from 1°

to 89°

with respect to an orientation of the primary mask pattern.