Semiconductor gamma-ray camera and medical imaging system

• US 5,786,597 A
• Filed: 06/28/1996
• Issued: 07/28/1998
• Est. Priority Date: 12/23/1994
• Status: Expired due to Term

• Current Assignee: Digirad Corporation
• Original Assignee: Digirad Corporation
• Inventors: Doty, F. Patrick, Lingren, Clinton L., Apotovsky, Boris, Friesenhahn, Stanley J., Augustine, Frank L., Ashburn, William L., Butler, Jack F.
• Primary Examiner(s): Porta, David P.
• Assistant Examiner(s): Bruce, David Vernon
• Application Number:
  US08/672,831
• Time in Patent Office: 760 Days
• Field of Search: 250/363.02, 250/363.04, 250/363.09, 250/363.1, 250/370.01, 250/370.08, 250/370.09, 250/370.1, 250/370.13, 378/37
• US Class Current: 250/370.09
• CPC Class Codes: A61B 6/037 Emission tomography
• CPC Class Codes: A61B 6/4258 for detecting non x-ray radiation, e.g. gamma radiation A61B6/037 takes precedence
• CPC Class Codes: G01T 1/161 Applications in the field of nuclear medicine, e.g. in vivo counting apparatus for radiation diagnosis A61B6/00
• CPC Class Codes: G01T 1/1642 using a scintillation crystal and position sensing photodetector arrays, e.g. ANGER cameras
• CPC Class Codes: G01T 1/243 Modular detectors, e.g. arrays formed from self contained units constructional or manufacturing details H01L25/00
• CPC Class Codes: G01T 1/247 Detector read-out circuitry for processing gain or off-set correction H04N
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H04N 23/30 for generating image signals from X-rays
• CPC Class Codes: H04N 5/32 Transforming X-rays cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30

Abstract

A high-energy photon imaging system including an imaging head, a signal processor, a data acquisition system and an image processing computer. The imaging head includes a detector comprising a plurality of closely-packed detection modules. Each detection module comprises a plurality of detection elements mounted to a circuit carrier. The detection elements produce electrical pulses having amplitudes indicative of the magnitude of radiation absorbed by the detection elements. The circuit carrier includes channels for conditioning and processing the signals generated by corresponding detection elements and for preparing the processed signals for further processing by a signal processor. Each conditioning and processing channel stores the amplitudes of the detection element electrical pulses exceeding a predetermined threshold. The detection modules employ a fall-through circuit which automatically finds only those detection elements that have a stored pulse amplitude exceeding the threshold. The fall-through circuit searches for the next detection element and associated channel having a valid event. The signal processor performs diagnostics, gain normalization, and response efficiency normalization functions. The data acquisition system controls the acquisition and processing of data received from the conditioning and processing channels, produces image data based upon the data in a format that is compatible with existing imaging cameras, and transmits the data to the image processing computer. The image processing computer formulates images based upon the processed signals and displays the formulated images on a display device.

Claims

1. A nuclear imaging system, comprising:

a. a radiation guide structure comprising one of a collimator or pinhole, and

b. an imaging detector positioned proximate the radiation guide structure, comprising;

(1) a plurality of detection modules, each having an exposure surface a surface opposite the exposure surface, and a plurality of sides, the exposure surface being substantially covered with radiation detecting material wherein each detection module is buttable on all sides with adjacent detection modules such that the imaging detector has substantially no dead regions between butted detection modules, and wherein each detection module further includes a plurality of semiconductor detection elements for producing electrical pulses having an amplitude indicative of the energy of radiation from high-energy photons impinging on the exposure surface, and

(2) a conditioning circuit, operatively coupled to the detection elements, for conditioning the pulses, wherein the conditioning circuit provides low-noise amplification of the pulse.

2. The imaging system of claim 1, wherein the detection modules are configured in a non-rectangular shape.

3. The imaging system of claim 1, wherein the detection modules are configured to conform to a non-planar surface such as a head or breast.

4. The imaging system of claim 1, wherein the detection elements comprise at least one CZT crystal tiled together, wherein the CZT crystals are patterned with areas of conductor which define separate detection elements, and wherein the conductor areas are separated by areas of passivation, and wherein the passivation areas are formed by treating areas between the conductor areas with a hydrogen peroxide solution.

5. The imaging system of claim 1, wherein the high-energy photons range from approximately 5 keV to 10 MeV.

6. The imaging system of claim 1, wherein the event processor comprises analog and digital integrated circuits.

7. The imaging system of claim 1, wherein the detection modules further include a circuit carrier, and wherein the material of the carrier has a thermal coefficient of expansion substantially equal to the coefficient of expansion of CZT.

8. The imaging system of claim 1, wherein the conditioning circuit further provides shaping of the pulses.

9. The imaging system of claim 8, wherein the imaging detector further comprises an event processor, operatively coupled to the conditioning circuit, for processing the pulses, wherein the event processor:

a. identifies valid events using amplitude discrimination; and

b. generates event-addresses corresponding to valid events.

10. The imaging system of claim 9, wherein the event processor stores a voltage representative of the magnitude of incident-photon energy.

11. The imaging system of claim 9, further comprising:

a. a data processor, wherein the data processor responds to a valid event by;

(1) storing the address corresponding to the valid event;

(2) deriving a normalized event amplitude; and

(3) storing the event in a selected memory bank.

12. The imaging system of claim 11, further comprising a computer imaging system, coupled to the data processor, wherein the computer imaging system accesses the data stored in the selected memory bank and controls the mode of imaging data, and wherein the computer imaging system formats the data into images and displays the images on display media.

13. The imaging system of claim 9, wherein the event processor comprises a peak detection circuit and a comparison circuit, and wherein the conditioning circuit is coupled to both the peak detection circuit and the comparison circuit, and wherein the event processor further comprises a plurality of latches coupled to the comparison circuit, and wherein the comparison circuit compares the amplitude of detection element pulses with a reference value, and wherein the comparison circuit sets a selected latch based upon the comparison.

14. The imaging system of claim 13, wherein the event processor utilizes a fall through method of processing the set latches, and wherein all of the set latches are read in a predetermined sequence.

15. The imaging system of claim 1, wherein the detection elements comprise at least one semiconductor wafer partitioned to form an array of detection elements.

16. The imaging system of claim 15, wherein a plurality of semiconductor wafers are tiled together.

17. The imaging system of claim 15, wherein each semiconductor wafer includes an electrode coupled to a side of the wafer which is exposed to high-energy photons and wherein each semiconductor wafer also includes an array of electrodes coupled to the opposite side of the wafer.

18. The imaging system of claim 17, wherein the semiconductor comprises cadmium-zinc-telluride (CZT) and the electrodes comprise a metal, and wherein the electrodes are deposited in a thin layer on the CZT wafer, and wherein a portion of the CZT wafer which is not covered by electrode metal is covered by a passivating layer formed upon the surface.

19. The imaging system of claim 18, wherein the passivating layer is formed by soaking the CZT wafer in an aqueous solution of hydrogen peroxide and baking the CZT wafer in air.

20. The imaging system of claim 18, wherein the passivating layer is formed by soaking the CZT wafer in a 3% by weight aqueous solution of hydrogen peroxide at a temperature of 60°

C. and baking the CZT wafer at 60°

C. in air for approximately 30 minutes.

21. The imaging system of claim 18, wherein the detection modules further include a circuit carrier having a plurality of interconnections which couple the CZT wafer to the conditioning circuit.

22. The imaging system of claim 21, wherein the circuit carrier is a pin grid array.

23. The imaging system of claim 15, wherein the array of detection elements is an 8×

8 square array.

24. The imaging system of claim 23, wherein the array of detection elements has an outside dimension of about 1 square inch.

25. The imaging system of claim 15, wherein each semiconductor wafer is partitioned to form a first and a second set of parallel strips, wherein the first set of strips are positioned upon the exposure surface of the detection module, the second set of strips are positioned upon the surface opposite the exposure surface of the detection module, and the second set of strips are orthogonal to the first set of strips.

26. The imaging system of claim 25, wherein the detection elements are formed at the intersection of the first and second sets of orthogonal strips.

27. The imaging system of claim 1, wherein a plurality of resistors and capacitors is operatively coupled between the detection elements and the conditioning circuit.

28. The imaging system of claim 27, wherein the resistors and capacitors utilize thick-film technology.

29. The imaging system of claim 27, wherein the resistors and capacitors utilize thin-film technology.

30. The imaging system of claim 1, wherein the imaging system is used to detect radiation emitted by a biological system or organ.

31. The imaging system of claim 30, wherein the imaging system is used for single-photon emission computed tomographic (SPECT) applications.

32. A nuclear medicine imaging system for imaging radiation emitted by an object under test, comprising:

a. an imaging head comprised of a plurality of detection modules, each having an exposure surface, a surface opposite the exposure surface, and a plurality of sides, the exposure surface being substantially covered with radiation detecting material, wherein each detection module is buttable on all sides with adjacent detection modules such that the imaging detector has substantially no dead regions between butted detection modules, and wherein each detection module further includes a plurality of semiconductor detection elements for producing electrical pulses indicative of the energy of radiation from high-energy photons impinging on the exposure surface,

b. an event processor, mounted within the detection modules, for processing the pulses, wherein the event processor flags events corresponding to each detection element that produces a pulse exceeding a predetermined threshold;

c. a data processor, coupled to the event processor, for successively reading the flagged events; and

d. a computer imaging system, coupled to the data processor, wherein the imaging system accesses the data processor to read the successive flagged events, and wherein the imaging system formats the pulses of the detection elements corresponding to the flagged events into images and displays the images on a display.

33. A camera for imaging radiation emitted by an object under test, comprising:

a. an imaging head comprised of a plurality of detection modules, wherein the detection modules are butted against one another in an array such that the imaging head has subtantially no dead regions between butted detection modules, and wherein the detection modules include a plurality of semiconductor detection elements, and wherein the detection elements produce pulses indicative of the energy of high-energy radiation absorbed by the detection elements; and

b. a processor, mounted within the detection modules, for processing the pulses, wherein the processor amplifies, conditions and processes the pulses, and wherein the processor stores processed pulses which exceed a threshold.

34. An imaging system for obtaining an image of the location and intensity of radiation emitted by a source, comprising an imaging detector for sensing energy and position-of-incidence of radiation, comprising a plurality of detection modules, each having an exposure surface, a surface opposite the exposure surface, and a plurality of sides, the exposure surface being substantially covered with radiation detecting material, wherein the detection modules are configurable in an N×

M array, and wherein each detection module is buttable on all sides with adjacent detection modules such that the imaging detector has substantially no dead regions between butted detection modules, and wherein each detection module further includes a plurality of semiconductor detection elements for producing electrical pulses indicative of the energy of radiation from high-energy photons impinging on the exposure surface.

35. The imaging system of claim 34, further including a support structure that provides mechanical support, shielding from electrical noise, shielding from stray-photon radiation, and electrical interconnection for the detection modules.

36. The imaging system of claim 34, further including a conditioning circuit for processing a photon event, wherein the conditioning circuit is operatively coupled to the detection elements, and wherein the conditioning circuit provides low-noise amplification and shaping of the pulses produced by the detection elements.

37. The imaging system of claim 36, further including an event processor, operatively coupled to the conditioning circuit, for processing the conditioned photon events, wherein the event processor:

a. identifies valid events using amplitude discrimination; and

b. generates event-addresses corresponding to valid events.

38. The imaging system of claim 37, wherein the event processor further stores a voltage representation of the magnitude of each incident-photon energy.

39. The imaging system of claim 37, further including a data processor, operatively coupled to the event processor, wherein the data processor responds to a valid event by:

a. storing the event address of the valid event;

b. deriving a normalized event amplitude; and

c. storing the event in a selected memory bank.

40. The imaging system of claim 34, wherein the detection elements comprise at least one semiconductor wafer partitioned to form an n×

m array of detection elements.

41. The imaging system of claim 40, wherein a plurality of semiconductor wafers are tiled together.

42. The imaging system of claim 40, wherein each semiconductor wafer is partitioned to form a first and a second set of parallel strips, wherein the first set of strips are positioned upon the exposure surface of the detection module, the second set of strips are positioned upon the surface opposite the exposure surface of the detection module, and the second set of strips are orthogonal to the first set of strips.

43. The imaging system of claim 42, wherein the detection elements are formed at the intersection of the first and second sets of orthogonal strips.

44. The imaging system of claim 40, wherein each semiconductor wafer includes an electrode coupled to a side of the wafer which is exposed to high-energy photons and wherein each semiconductor wafer also includes an array of electrodes coupled to the opposite side of the wafer.

45. The imaging system of claim 44, wherein each semiconductor comprises cadmium-zinc-telluride (CZT) and the electrodes comprise a metal, and wherein the electrodes are deposited in a thin layer on the CZT wafer, and wherein a portion of the CZT wafer which is not covered by electrode metal is covered by a passivating oxide layer formed upon the surface.

46. The imaging system of claim 45, wherein the passivating oxide layer is formed by soaking the CZT wafer in an aqueous solution of hydrogen peroxide and baking the CZT wafer in air.

47. The imaging system of claim 45, wherein the passivating oxide layer is formed by soaking the CZT wafer in a 3% by weight aqueous solution of hydrogen peroxide at a temperature of 60°

C. and baking the CZT wafer at 60°

C. in air for 30 minutes.

48. The imaging system of claim 40, wherein the array of detection elements is an 8×

8 square array.

49. The imaging system of claim 48, wherein the array of detection elements has an outside dimension of about 1 square inch.