Semiconductor light-emitting device

• US 5,786,606 A
• Filed: 12/12/1996
• Issued: 07/28/1998
• Est. Priority Date: 12/15/1995
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Itaya, Kazuhiko, Nishio, Johji, Fujimoto, Hidetoshi
• Primary Examiner(s): MEIER, STEPHEN D
• Application Number:
  US08/766,456
• Time in Patent Office: 593 Days
• Field of Search: 257/103, 257/77
• US Class Current: 257/103
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

Disclosed is a semiconductor light-emitting device, comprising a substrate, a thin film formed on the substrate and containing silicon carbide as a main component, a buffer layer formed on the thin film and consisting of a gallium nitride-based material, and a laminate structure formed on the buffer layer and consisting of a plurality of gallium nitride-based material layers, wherein the total thickness of the substrate and the thin film is at least twice the thickness of the buffer layer and is smaller than the thickness of the laminate structure.

Claims

1. A semiconductor light-emitting device, comprising:

a substrate;

a buffer layer on the substrate comprising a gallium nitride-based material having a thickness less than half the thickness of the substrate; and

a laminate structure on the buffer layer comprising a plurality of gallium nitride-based material layers,

wherein said laminate structure comprises an active layer having a multi-quantum well structure comprising a plurality of pairs of layers comprising a barrier layer and a well layer, and the well layers have a carbon content higher than the barrier layers.

2. The semiconductor light-emitting device according to claim 1, wherein a IV group element is added to the substrate.

3. The semiconductor light-emitting device according to claim 2, wherein the IV group element is at least one element selected from the group consisting of Ge, Sn and Ti.

4. The semiconductor light-emitting device according to claim 2, wherein the concentration of the IV group element contained in the thin film falls within a range of between 10¹⁹ cm^-3 and 10²³ cm^-3.

5. The semiconductor light-emitting device according to claim 2, wherein the concentration of the IV group element contained in the thin film is increased toward the buffer layer.

7. The light-emitting diode according to claim 2, wherein a IV group element is added to the substrate.

8. The light-emitting diode according to claim 7, wherein the IV group element is at least one element selected from the group consisting of Ge, Sn and Ti.

9. The light-emitting diode according to claim 7, wherein the concentration of the IV group element contained in the thin film falls within a range of between 10¹⁹ cm^-3 and 10²³ cm^-3.

10. The light-emitting diode according to claim 7, wherein the concentration of the IV group element contained in the thin film is increased toward the buffer layer.

6. A light-emitting diode, comprising:

a substrate;

a buffer layer on the substrate comprising a gallium nitride-based material having a thickness less than half the thickness of the substrate; and

a laminate structure on the buffer layer comprising a plurality of gallium nitride-based material layers,

wherein said laminate structure comprises an active layer having a multi-quantum well structure comprising a plurality of pairs of layers comprising a barrier layer and a well layer, and the well layers have a carbon content higher than the barrier layers.