Method and apparatus for reading out a programmable resistor memory

• US 5,787,042 A
• Filed: 03/18/1997
• Issued: 07/28/1998
• Est. Priority Date: 03/18/1997
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Morgan, Donald M.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Tran, Andrew Q.
• Application Number:
  US08/819,991
• Time in Patent Office: 497 Days
• Field of Search: 365/196, 365/100, 365/148, 365/210, 365/205, 365/189.05, 365/163, 327/54, 327/55, 327/56, 327/57
• US Class Current: 365/196
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 7/06 Sense amplifiers; Associated circuits , e.g. timing or triggering circuits

Abstract

To read out a data bit stored in a memory cell including a programmable resistor memory element, a first voltage is developed on a first sense node due to initiation of current flow through the memory element and a second voltage is developed on a second sense node due to current flow through a reference resistor. The first and second voltages are separately detected to generate a trip signal in response to a leading edge of either of the first and second voltages achieving a threshold level. A flip-flop circuit is conditioned by the trip signal to produce opposite logic signal voltages on the first and second sense nodes indicative of the binary value of the stored data bit.

Claims

1. Circuitry for reading out a data bit stored in a memory cell of a memory array, comprising:

a readout circuit including at least one sense node coupled to receive a readout signal from the memory cell; and

a detector circuit coupled to the sense node and operating when the readout signal achieves a threshold level indicative of the data bit stored in the memory cell to condition the readout circuit such that the sense node is driven to a logic signal level that reliably indicates a binary value of the stored data bit.

2. The circuitry defined in claim 1, wherein the detector circuit operates to condition the readout circuit when a leading edge of the readout signal achieves the threshold level.

3. The circuitry defined in claim 2, wherein the memory cell includes a programmable resistor memory element.

4. The circuitry defined in claim 2, wherein:

the readout circuit includes a first sense node coupled to receive the readout signal and a second sense node coupled to receive a reference signal, and

the detector circuit includes a first detector coupled to the first sense node and a second detector coupled to the second sense node, the readout circuit being conditioned to drive the first and second sense nodes to opposite logic signal levels indicative of the binary value of the stored data bit by one of the first and second detectors depending upon which of leading edges of the readout and reference signals first achieves respective threshold levels.

5. A circuit for reading out a data bit stored in a programmable resistor memory element of a memory array, comprising:

a comparator including a first sense node coupled to receive a readout signal from the memory element and a second sense node coupled to receive a reference signal; and

a detector circuit coupled to the first and second sense nodes and operating when a leading edge of one of the readout and reference signals first achieves a threshold level to generate a trip signal, the comparator, in response to the trip signal, operating to drive the first sense and second sense nodes to opposite logic signal levels depending on an amplitude relationship of the readout and reference signals at the time of trip signal generation, the sense node logic signal levels being indicative of a binary value of the stored data bit.

6. The circuit defined in claim 5, wherein one of the logic signal levels is of a high voltage relative to a voltage of the threshold level, the circuit further including an isolation circuit for disconnecting at least the memory element from the first sense node in response to the trip signal.

7. The circuit defined in claim 6, wherein the comparator comprises a flip-flop that is set to either of two stable states by the trip signal.

8. The circuit defined in claim 6, wherein the detector circuit includes:

a first detector having an input coupled to the first sense node and an output on which the trip signal is generated when the readout signal leading edge is the first to achieve the threshold level;

a second detector having an input coupled to the second sense node and an output on which the trip signal is generated when the reference signal is the first to achieve the threshold level; and

a gate having inputs connected to the outputs of the first and second detectors and an output on which the trip signal from either the first detector or the second detector appears.

9. The circuit defined in claim 8, further including a latch connected to be set by the trip signal on the gate output, whereby to produce a latched trip signal to the comparator and the isolation circuit, the latch being reset by a timing signal concluding a readout cycle.

10. The circuit defined in claim 8, wherein each of the first and second detectors includes an inverter and a threshold adjusting circuit, the inverter coupled to one of the first and second sense nodes and having an output that undergoes a voltage level transition to generate the trip signal when the leading edge of one of the readout and reference signals achieves the threshold level set by the threshold adjusting circuit.

11. The circuit defined in claim 10, wherein the threshold adjusting circuit is controlled by a readout cycle timing signal to set a first threshold level effective to inhibit trip signal generation during intervals between readout cycles and to set a second threshold level achievable by the leading edges of the readout and reference signals during a readout cycle.

12. The circuit defined in claim 11, wherein the threshold adjusting circuit includes:

first and second MOS transistors having source-drain circuits connected in series between a supply voltage node and a threshold level voltage node, a gate of one of the first and second MOS transistors connected to the threshold level voltage node,

a third MOS transistor having a source-drain circuit connected between the supply voltage node and the threshold level voltage node and a gate for receiving the readout cycle timing signal, such that the third MOS transistor is rendered conductive by the timing signal to set the first threshold level on the voltage node during intervals between readout cycles, the first threshold level rendering the one of the first and second MOS transistors non-conductive, the timing signal rendering the third MOS transistor non-conductive during the readout cycle, such that the first and second MOS transistors are rendered conductive to set the second threshold level on the threshold level voltage node.

13. The circuit defined in claim 12, wherein the first, second, and third MOS transistors are p-channel MOS transistors.

14. The circuit defined in claim 13, wherein the inverter includes a fourth MOS transistor and a fifth MOS transistor having source-drain circuits connected between there threshold level voltage node and a low reference voltage node, gates of the fourth and fifth MOS transistors commonly connected to the one of the first and second sense nodes, and a node between the source-drain circuits of the fourth and fifth MOS transistors serving as the inverter output.

15. The circuit defined in claim 14, wherein the fourth MOS transistor is a p-channel MOS transistor and the fifth MOS transistor is an n-channel MOS transistor.

16. A method of reading out a data bit stored in a memory cell of a memory array, comprising:

initiating a readout signal from the memory cell during a readout cycle;

detecting a leading edge of the readout signal;

generating a trigger signal when the leading edge of the readout signal achieves a threshold level; and

conditioning a readout circuit, in response to the trigger signal, to produce a logic signal indicative of a binary value of the stored data bit.

17. A method of reading out a data bit stored by a programmable resistor memory element, comprising:

coupling a first sense node to receive a readout signal from the memory element during a readout cycle;

coupling a second sense node to receive a reference signal;

detecting the readout signal developing on the first sense node;

detecting the reference signal developing on the second sense node;

generating a trigger signal when one of the developing readout and reference signals achieves a threshold; and

driving the first and second sense nodes, in response to the trigger signal, to opposite logic signal levels indicative of a binary value of the stored data bit.

18. The method defined in claim 17, further including the step of isolating the memory element from the first sense node in response to the trigger signal.

19. The method defined in claim 18, further comprising the steps of:

applying a regulated current to the first and second sense nodes at the beginning of the readout cycle to produce a current flow through the memory element as the readout signal and to produce a current flow through a reference resistor as the reference signal.

20. The method defined in claim 18, further including the steps of:

adjusting the threshold to a first value effective to inhibit generation of the trigger signal during intervals between readout cycles; and

adjusting the threshold to a second value achievable by leading edges of the readout and reference signals, and thereby effective to initiate generation of the trigger signal during readout cycles.