Interleaved-fin thermal connector

• US 5,787,976 A
• Filed: 07/01/1996
• Issued: 08/04/1998
• Est. Priority Date: 07/01/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Digital Equipment Corporation (HP Inc.)
• Inventors: Fitch, John S., Hamburgen, William R., Eustace, Robert A.
• Primary Examiner(s): Leo, Leonard R.
• Application Number:
  US08/674,031
• Time in Patent Office: 764 Days
• Field of Search: 165/80.3, 165/185, 174/16.3, 257/722, 361/703, 361/704, 361/707, 361/709, 361/710
• US Class Current: 165/185
• CPC Class Codes: F28F 3/02 Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations F28F3/08 takes precedence
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3672 Foil-like cooling fins or heat sinks being part of lead-frames H01L23/49568
• CPC Class Codes: H01L 23/433 Auxiliary members in containers characterised by their shape, e.g. pistons
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/15312 being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

In order to provide a thermal coupling between a heat source and a heat sink, an interleaved-fin connector is provided. The connector comprises first and second substrates. The first substrate includes a first surface. A plurality of first channels are etched on the first surface to form a plurality of first fins and a first base. The first base can be thermally engaged with the heat source. The second substrate includes a second surface having a plurality of second channels etched therein. The second channels form a plurality of second fins and a second base. The second base can be thermally engaged with the heat sink. The first and second fins providing a thermally conductive path from the heat source to the heat sink when interleaved with each other.

Claims

1. An apparatus for thermally coupling a heat source to a heat sink, comprising:

a first substrate including a first surface having a plurality of first channels formed therein to form a plurality of first fins and a first base to thermally engage with the heat source, the first fins being concentric and cylindrical and including a V-shaped cut-out along the axis of concentricity to separate the first fins into a first segment and a second segment, and the fins of the first segment being radially staggered with respect to the fins of the second segment;

a second substrate including a second surface having a plurality of second channels etched therein to form a plurality of second fins and a second base to thermally engage with the heat sink, the second fins being concentric and cylindrical and including a V-shaped cut-out along the axis of concentricity to separate the second fins into a third segment and a fourth segment, and the fins of the third segment being radially staggered with respect to the fins of the fourth segment, the first and second fins providing a thermally conductive path from the heat source to the heat sink when interleaved with each other.

2. The apparatus of claim 1 wherein the first and second substrates are made of a silicon crystal and wherein the first channels are anisotropically wet etched.

3. The apparatus of claim 1 wherein the first and second substrates are made of a polycrystal and wherein the first and second channels are anisotropically dry etched.

4. The apparatus of claim 3 wherein the dry etching uses plasma or reactive ions.

5. The apparatus of claim 1 further comprising:

a third substrate having opposing first and second side surfaces, a plurality of third channels etched in the first side surface to form a plurality of third fins, and a plurality of fourth channels etched in the second side surface to form a plurality of fourth fins, the third substrate to thermally couple the first and second substrates.

6. The apparatus of claim 1 wherein the first substrate and the second substrate are identical in form.

7. The apparatus of claim 1 wherein the first channels and the second channels are etched.

8. The apparatus of claim 1 wherein the first substrate is of one piece and the second substrate is of one piece.

9. The apparatus of claim 1 further comprising:

a third substrate having opposing first and second side surfaces, the first surface adapted to engage with the second base of the second substrate, the second surface having a plurality of third fins, the third fins being concentric and cylindrical and including a V-shaped cut-out along the axis of concentricity to separate the third fins into a fifth segment and a sixth segment, and the fins of the fifth segment being radially staggered with respect to the fins of the sixth segment.

10. A thermally coupled apparatus, comprising:

a semiconductor heat source mounted on a package base;

a first substrate including a first surface having a plurality of first channels etched therein to form a plurality of first fins and a first base thermally engaged with the semiconductor heat source, the first fins being concentric and cylindrical and including a V-shaped cut-out alone the axis of concentricity to separate the first fins into a first segment and a second segment, and the fins of the first segment being radially staggered with respect to the fins of the second segment;

a lid made of a second substrate, the lid including an inner surface having a plurality of second channels etched therein to form a plurality of second fins and a second base for thermally engaging with the heat sink, the lid for hermetically sealing the semiconductor heat source with the package base, and the first and second fins providing a thermally conductive path from the heat source to the lid when interleaved with each other.

11. The apparatus of claim 10 including a seal between the package base and the lid to hermetically seal the semiconductor device.

12. An apparatus for thermally coupling a heat source to a heat sink, comprising:

a first substrate including a plurality of first fins formed therein, the first substrate having a first base to thermally engage with the heat source, the first fins being concentric curved elements, the first fins having a cut-out with a V-shaped cross-section, the cut-out to separate the first fins into a first segment and a second segment, the second segment circumferentially spaced with respect to the first segment and having fins radially staggered with respect to the fins of the first segment

a second substrate including a plurality of second fins formed therein, the second substrate having a second base to thermally engage with the heat sink, the second fins being concentric curved elements, the second fins having a cut-out with a V-shaped cross-section, the cut-out to separate the second fins into a third segment and a fourth segment, the fourth segment circumferentially spaced with respect to the third segment and having fins radially staggered with respect to the fins of the third segment, the first and second fins providing a thermally conductive path from the heat source to the heat sink when interleaved with each other.