Real time measurement of etch rate during a chemical etching process

• US 5,788,801 A
• Filed: 03/27/1997
• Issued: 08/04/1998
• Est. Priority Date: 12/04/1992
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Wong, Justin Wai-chow, Ratzlaff, Eugene Henry, Hsiao, Yiping, Barbee, Steven George, Li, Leping, Heinz, Tony Frederick
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/827,437
• Time in Patent Office: 495 Days
• Field of Search: 156/345, 216/84, 216/86, 204/129.2, 204/129.5, 204/400, 204/406, 204/407
• US Class Current: 156/345.16
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Claims

1. An etch station having contactless real-time in-situ control of an etching process during etching of at least one wafer in a wet chemical etchant bath, said etch station comprising:

a) two conductive electrodes;

b) a means for positioning said two conductive electrodes inside the wet chemical etchant bath proximate to but not in contact with the at least one wafer, wherein each of the electrodes is positioned on an opposite side of the at least one wafer;

c) a means for monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process;

d) a means for recording a plurality of values of said electrical characteristic as a function of time during etching; and

e) a means for controlling the etching process in response to the monitoring of the prescribed change in the electrical characteristic.

2. The etch station of claim 1, wherein the monitoring means comprises an impedance monitor and further wherein the prescribed change in the electrical characteristic comprises a prescribed change in impedance.

3. The etch station of claim 2, wherein the monitoring means comprises an impedance monitor and further wherein the prescribed change in the electrical characteristic comprises a prescribed change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance.

4. The etch station of claim 1, further comprising a means for determining an instantaneous etch rate in real time from at least two of the recorded plurality of values.

5. The etch station of claim 1, further comprising a means for determining an average etch rate in real time from at least two of the recorded plurality of values.

6. The etch station of claim 1, further comprising a means for determining an etching end point in real time from at least two of the recorded plurality of values.