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Plating of noble metal electrodes for DRAM and FRAM

  • US 5,789,320 A
  • Filed: 04/23/1996
  • Issued: 08/04/1998
  • Est. Priority Date: 04/23/1996
  • Status: Expired due to Term
First Claim
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1. A method for forming a capacitor for a semiconductor device, said method comprises the steps of:

  • plating a noble metal electrode, said plated noble metal electrode being selected from the group consisting of pure noble metals and alloys of noble metals;

    depositing a high-epsilon or ferromagnetic material on at least some surfaces of said plated noble metal electrode; and

    depositing a counterelectrode on said high-epsilon or ferromagnetic material.

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