Plating of noble metal electrodes for DRAM and FRAM
First Claim
1. A method for forming a capacitor for a semiconductor device, said method comprises the steps of:
- plating a noble metal electrode, said plated noble metal electrode being selected from the group consisting of pure noble metals and alloys of noble metals;
depositing a high-epsilon or ferromagnetic material on at least some surfaces of said plated noble metal electrode; and
depositing a counterelectrode on said high-epsilon or ferromagnetic material.
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Accused Products
Abstract
Noble metal plating on a preexisting seed layer is used in the fabrication of electrodes for DRAM and FRAM. The plating may be spatially selective or nonselective. In the nonselective case, a blanket film is first plated and then patterned after deposition by spatially selective material removal. In the selective case, the plated deposits are either selectively grown in lithographically defined areas by a through-mask plating technique, or selectively grown as a conformal coating on the exposed regions of a preexisting electrode structure. A diamond-like carbon mask can be used in the plating process. A self-aligned process is disclosed for selectively coating insulators in a through-mask process.
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Citations
29 Claims
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1. A method for forming a capacitor for a semiconductor device, said method comprises the steps of:
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plating a noble metal electrode, said plated noble metal electrode being selected from the group consisting of pure noble metals and alloys of noble metals; depositing a high-epsilon or ferromagnetic material on at least some surfaces of said plated noble metal electrode; and depositing a counterelectrode on said high-epsilon or ferromagnetic material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 20, 21, 22, 23, 26, 27, 28)
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13. A method for plating onto a substrate to provide a pattern of conductive materials thereon comprising the steps of:
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a) depositing a blanket layer of a first conductive material on a substrate; b) applying a DLC mask layer on said blanket layer; c) patterning said DLC mask layer to provide exposed areas of said blanket layer d) plating said exposed areas of said blanket layer with a second conductive material to form a pattern of conductive features; e) removing the DLC mask layer to expose areas of said first conductive material; and f) removing said exposed areas of said first conductive material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 24, 25, 29)
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Specification