Programmable anti-fuse device and method for manufacturing the same

• US 5,789,796 A
• Filed: 08/25/1997
• Issued: 08/04/1998
• Est. Priority Date: 07/26/1993
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kang, Sang-Won, Baek, Jong-Tae
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US08/917,171
• Time in Patent Office: 344 Days
• Field of Search: 257/530, 257/50
• US Class Current: 257/530
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention relates to a technology of an electrically programmable anti-fuse device. The anti-fuse device comprises a semiconductor substrate provided with a plurality of functional elements; a field oxide layer formed on said semiconductor substrate, for electrically isolating the functional elements from each other; a predetermined pattern of a first electrode formed on said field oxide layer; a first insulating layer having two contact holes isolated from each other only on said first electrode, deposited on said field oxide layer as well as both end portions and center portion of said first electrode; a second insulating layer formed in said contact holes, to serves as an interlayer; and a second electrode formed on said second insulating layer.

Claims

1. An electrically programmable anti-fuse device comprising:

a semiconductor substrate provided with a plurality of functional elements;

a field oxide layer formed on said semiconductor substrate for electrically isolating the functional elements from each other;

a predetermined pattern of a first electrode of a polysilicon layer doped with a high concentration of an impurity ion formed on said field oxide layer;

a first insulating layer on said field oxide layer as well as both end portions and center portion of said first electrode, said first insulating layer having one contact hole which exposes only a portion of said first electrode and a further contact hole which is isolated from said one contact hole, and each said contact hole only exposing a separate portion of said first electrode;

second insulating layer formed only in each of said contact holes and serving as an interlayer; and

a second and a third electrode of an aluminum based alloy extending respectively into said one contact hole and said further contact hole and formed vertically on said second insulating layers in said one contact hole and said further contact hole, said second and third electrodes being electrically isolated from each other by said first insulating layer such that a circuit can be made between said second electrode and said first electrode and between said third electrode and said first electrode upon the application of a fusing process;

whereby should one of said second or third electrodes be defective, the other of said electrodes can be fused to said first electrode upon the application of a fusing process.

2. The anti-fuse device according to claim 1, wherein said second electrode is comprised of at least two electrode portion which are electrically isolated from each other by said first insulating layer.

3. The anti-fuse device according to claim 1, wherein said first insulating layer is made of a low-temperature oxide layer.

4. The anti-fuse device according to claim 1, wherein said impurity ion is P⁺ type of impurity ion.

5. The anti-fuse device according to claim 1, wherein said second insulating layer is made of SiO₂, Si₃ N₄ or silicon oxide nitride.

6. The anti-fuse device according to claim 1, wherein said second insulating layer is made of a dielectric material of amorphous silicon.

7. The anti-fuse device according to claim 1, wherein said second insulating layer is made of a composite interlayer including insulating and dielectric materials.