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Gallium nitride type compound semiconductor light emitting element

  • US 5,793,054 A
  • Filed: 06/13/1996
  • Issued: 08/11/1998
  • Est. Priority Date: 06/15/1995
  • Status: Expired due to Term
First Claim
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1. A gallium nitride type compound semiconductor light emitting element comprising a quantum well layer consisting of a Gax Al1-x N layer (0≦

  • x≦

    1) having a Wurtzite structure on a <

    0001>

    azimuth substrate surface, as a light emitting layer, said quantum well layer having a layer thickness greater than or equal to 10 nm and being under tensile strain, and light is taken out in parallel direction to said substrate surface.

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