Semiconductor device and method of fabricating the same

• US 5,793,117 A
• Filed: 07/22/1996
• Issued: 08/11/1998
• Est. Priority Date: 07/21/1995
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Takahashi, Nobuaki, Shimada, Yuzo, Senba, Naoji
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): Clark, Jhihan B.
• Application Number:
  US08/684,617
• Time in Patent Office: 750 Days
• Field of Search: 257/780, 257/737, 257/738, 257/48, 438/613, 438/614
• US Class Current: 257/780
• CPC Class Codes: G01R 1/07314 the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support on an elastic support, e.g. a film, G01R1/0735
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/351 Thermal stress

Abstract

The invention provides a semiconductor device including a semiconductor substrate formed thereon with at least one recessed portion, an electrically conductive layer covering at least a surface of the recessed portion therewith, and a ball-bump formed on the electrically conductive layer within the recessed portion. The semiconductor device can act as a probe card by additionally having a tester device formed in the semiconductor substrate and provided with a function of testing electrical performances of a semiconductor device. Since the recessed portion can be formed by lithography technique, it is possible to arrange the greater number of pins in a smaller pitch, and in addition, it is also possible to locate ball-bumps in place with higher accuracy than a conventional semiconductor device.

Claims

1. A semiconductor device comprising:

a semiconductor substrate formed thereon with at least one recessed portion;

an electrically conductive layer covering at least a surface of said recessed portion therewith;

a thin, electrically conductive film formed over said electrically conductive layer within said recessed portion;

a protection film formed over said electrically conductive layer, wherein an edge portion of said protection film abuts an edge portion of said thin, electrically conductive film; and

a ball-bump formed on said electrically conductive layer within said recessed portion.

2. The semiconductor device as set forth in claim 1, wherein said thin, electrically conductive film is made of one of Ti--Cu, Ni--Au and Cr--Cu--Au.

3. The semiconductor device as set forth in claim 1, wherein said semiconductor substrate is made of silicon and said recessed portion is formed on a surface having Miller indices of (100).

4. The semiconductor device as set forth in claim 1 further comprising a metallic oxide film formed below said electrically conductive layer.

5. The semiconductor device as set forth in claim 1, wherein said ball-bump is formed by using soldering material which contains one of Pb--Sn, Sn--Ag, Sn--Zn, An--Sn, Au and In as a principal ingredient.

6. The semiconductor device as set forth in claim 1, wherein said ball-bump is made of plastics plated with metal.

7. The semiconductor device as set forth in claim 1, wherein said ball-bump is made of electrically conductive resin.

8. The semiconductor device as set forth in claim 2, wherein said electrically conductive layer is formed over said semiconductor substrate.

9. The semiconductor device as set forth in claim 8, wherein said protection layer is made of one of polyimide resin.

10. The semiconductor device as set forth in claim 8, wherein said protection layer is made of one of polyimide resin, epoxy resin and bonzocyclobutene resin.

11. A semiconductor device comprising:

a semiconductor substrate formed thereon with at least one recessed portion;

a circuit pattern formed in said semiconductor substrate;

an electrically conductive layer covering at least a surface of said recessed portion therewith;

a ball-bump formed on said electrically conductive layer within said recessed portion; and

a tester device formed in said semiconductor substrate, said tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card;

wherein said circuit pattern is electrically connected to said electrically conductive layer via through holes formed in said semiconductor substrate.

12. The semiconductor device as set forth in claim 11, wherein said semiconductor substrate is made of GaAs and said tester device includes a light emitting device therein which is designed to emit a light to a semiconductor device which has been found defective by said tester device.

13. The semiconductor device as set forth in claim 11, wherein said ball-bump is made of one of metal plated plastics, electrically conductive resin, metal and resilient material.

14. A semiconductor device comprising:

a semiconductor substrate formed on one of upper and lower surfaces thereof with at least one recessed portion;

an electrically conductive layer covering at least a surface of said recessed portion therewith;

a ball-bump formed on said electrically conductive layer within said recessed portion;

a circuit pattern formed on the other of said upper and lower surfaces from said semiconductor substrate, said circuit pattern being electrically connected to said electrically conductive layer via through holes formed in said semiconductor substrate; and

a semiconductor chip disposed on said circuit pattern in electrical connection therewith to constitute a tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card.

15. The semiconductor device as set forth in claim 14, wherein said semiconductor chip is electrically connected to said circuit pattern by means of one of a ball-bump, wire bonding, TAB and a beam lead.

16. The semiconductor device as set forth in claim 14, wherein said semiconductor chip is designed to have a function for changing specification of said tester device.

17. The semiconductor device as set forth in claim 14 further comprising a light emitting device in place of said semiconductor chip, said semiconductor substrate being formed with a through hole, said light emitting device being disposed in alignment with said through hole and emitting a light through said through hole to a semiconductor device which has been found defective.

18. A semiconductor device comprising:

a semiconductor substrate formed on one of upper and lower surfaces thereof with at least one recessed portion;

an electrically conductive layer covering at least a surface of said recessed portion therewith;

a ball-bump formed on said electrically conductive layer within said recessed portion;

a circuit pattern formed on the other of said upper and lower surfaces from said semiconductor substrate, said circuit pattern being electrically connected to said electrically conductive layer via through holes formed in said semiconductor substrate;

a tester device formed below said other of said upper and lower surfaces from said semiconductor substrate, said tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card;

a light emitting device being designed to emit a light to a semiconductor device which has been found defective by said tester device; and

a semiconductor chip disposed on said circuit pattern in electrical connection therewith, said semiconductor chip being designed to have a function for changing specification of said tester device.

19. A semiconductor device comprising:

a semiconductor substrate formed thereon with at least one recessed portion;

a circuit pattern formed in said semiconductor substrate;

a protection film formed over a surface of said semiconductor substrate;

an electrically conductive layer covering at least a surface of said recessed portion therewith; and

a ball-bump formed on said electrically conductive layer within said recessed portion;

wherein said circuit pattern is electrically connected to said electrically conductive layer via through holes formed in said semiconductor substrate.

20. The semiconductor device as set forth in claim 19, wherein said protection film is made of photosensitive material.

21. The semiconductor device as set forth in claim 19 further comprising a thin, electrically conductive film formed over said electrically conductive layer within said recessed portion, said thin, electrically conductive film being made of one of Ti--Cu, Ni--Au and Cr--Cu--Au.

22. The semiconductor device as set forth in claim 19 further comprising a tester device formed in said semiconductor substrate, said tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card.

23. The semiconductor device as set forth in claim 22, wherein said semiconductor substrate is made of GaAs and said tester device includes a light emitting device therein which is designed to emit a light to a semiconductor device which has been found defective by said tester device.

24. A semiconductor device comprising:

a semiconductor substrate formed thereon with at least one recessed portion, wherein said semiconductor substrate is formed with at least one through hole through which a light is to pass or a probe is to be inserted;

an electrically conductive layer covering at least a surface of said recessed portion therewith;

a ball-bump formed on said electrically conductive layer within said recessed portion; and

a tester device formed in said semiconductor substrate, said tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card.

25. A semiconductor device comprising:

a semiconductor substrate formed thereon with at least one recessed portion, wherein said semiconductor substrate is formed with at least one through hole through which a light is to pass or a probe is to be inserted;

a protection film formed over a surface of said semiconductor substrate;

an electrically conductive layer covering at least said recessed portion therewith;

a ball-bump formed on said electrically conductive layer within said recessed portion; and

a tester device formed in said semiconductor substrate, said tester device having a function of testing electrical performances of a semiconductor device so that said semiconductor device can act as a probe card.