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Laser assisted plasma chemical etching method

  • US 5,795,493 A
  • Filed: 05/01/1995
  • Issued: 08/18/1998
  • Est. Priority Date: 05/01/1995
  • Status: Expired due to Fees
First Claim
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1. A method for removing material from a semiconductor substrate to thin and smooth said semiconductor substrate, comprising the steps of:

  • measuring uniformity of thickness of said semiconductor substrate;

    generating a heating profile map from the uniformity of thickness measurement;

    placing the semiconductor substrate in an etching chamber;

    differentially heating localized portions of said semiconductor substrate in accordance with said heating profile map so that thicker localized portions are at a higher temperature and thinner localized portions of said semiconductor substrate are at a lower temperature; and

    etching an entire surface of said semiconductor substrate, wherein the localized portions of said semiconductor substrate that are at a higher temperature are etched at a faster rate than the localized portions of said semiconductor substrate that are at a lower temperature.

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