Laser assisted plasma chemical etching method

• US 5,795,493 A
• Filed: 05/01/1995
• Issued: 08/18/1998
• Est. Priority Date: 05/01/1995
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Bukhman, Yefim, Keller, Edward M.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/432,556
• Time in Patent Office: 1,205 Days
• Field of Search: 156/626.1, 156/643.1, 156/662.1, 156/345, 216/60, 216/65, 216/66, 216/59, 216/67
• US Class Current: 438/5
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A scaleable laser and control unit (58) is used to differentially heat portions of a semiconductor substrate (40) during downstream etching. Such differential heating provides a differential etch rate for each portion heated resulting in improved uniformity and reduced etch induced surface damage. An etching chamber (50) capable of containing the downstream plasma and providing a direct line of sight between the substrate (40) and the scanable laser unit (58) is provided. In addition, the system provides for dynamic updating of the process by in situ etch rate and temperature measurements.

Claims

1. A method for removing material from a semiconductor substrate to thin and smooth said semiconductor substrate, comprising the steps of:

measuring uniformity of thickness of said semiconductor substrate;

generating a heating profile map from the uniformity of thickness measurement;

placing the semiconductor substrate in an etching chamber;

differentially heating localized portions of said semiconductor substrate in accordance with said heating profile map so that thicker localized portions are at a higher temperature and thinner localized portions of said semiconductor substrate are at a lower temperature; and

etching an entire surface of said semiconductor substrate, wherein the localized portions of said semiconductor substrate that are at a higher temperature are etched at a faster rate than the localized portions of said semiconductor substrate that are at a lower temperature.

2. The method of claim 1, wherein the step of placing a semiconductor substrate in an etching chamber includes placing a semiconductor substrate comprised of a handle wafer bonded to a device wafer.

3. The method of claim 1, wherein the step of etching the semiconductor substrate further includes etching a device wafer to a predetermined thickness.

4. The method of claim 3, wherein the device wafer is comprised of a silicon wafer.

5. The method of claim 3, wherein the device wafer is comprised of III-V semiconductor material.

6. The method of claim 1, wherein the step of etching an entire surface of the semiconductor substrate further includes monitoring the uniformity of thickness of said semiconductor substrate to determine the localized portions of said semiconductor substrate that require differential heating.

7. The method of claim 1, wherein the step of measuring uniformity of thickness of said semiconductor substrate further comprises measuring an initial thickness at each of a plurality of portions of a major surface of said semiconductor substrate.

8. The method of claim 7, wherein the step of measuring uniformity of thickness of said semiconductor substrate further comprises measuring thickness using an optical measuring unit.

9. The method of claim 1, wherein the step of differentially heating localized portions of said semiconductor substrate further comprises heating using a laser.

10. The method of claim 1, wherein the step of measuring uniformity of thickness of said semiconductor substrate further comprises measuring an initial thickness at a plurality of portions of a major surface of said semiconductor substrate and after some etching has been performed subsequently measuring a subsequent thickness at each of the plurality of portions and calculating an etch rate for the plurality of portions and calculating a heating profile map utilizing the measured thickness and the calculated etch rate data.

11. The method of claim 10, wherein the heating profile map calculated is used to determine the localized portions of said semiconductor substrate that require differential heating.

12. The method of claim 1, wherein the step of differentially heating localized portions of said semiconductor substrate further comprises measuring a temperature and calculating an etch rate for the localized portions and calculating a heating profile map therefrom.

13. A method for producing thin, uniform device wafers, comprising the steps of:

providing a wafer substrate in an etching chamber, wherein said wafer substrate further comprises a handle wafer bonded to a device wafer having a major surface;

measuring an initial thickness of said device wafer at a plurality of portions of said major surface;

heating thicker portions of said major surface to a higher temperature than thinner portions of said major surface;

etching the entire major surface of said device wafer wherein an etch rate of a thicker portion of said major surface will be higher than an etch rate of a thinner portion of said major surface;

measuring a subsequent thickness of said device wafer at a plurality of portions;

calculating an etch rate for said plurality of portions;

calculating a heating profile map wherein said heating profile map is determined by thickness and etch rate data for said plurality of portions;

heating said plurality of portions to a temperature determined by heating profile map; and

repeating the etching, measuring, calculating and heating steps until said device wafer is a predetermined thickness.

14. The method of claim 13, wherein the step of providing a wafer substrate in an etching chamber includes a downstream plasma etching chamber.

15. The method of claim 13, wherein the steps of heating include heating with a laser generation apparatus.

16. The method of claim 13, wherein the step of calculating a heating profile map further comprises measuring temperatures of said plurality of portions for use in said step of calculating.